CY62158E MoBL

Switching Characteristics

Over the Operating Range [9]

Parameter

 

 

 

 

 

 

Description

 

45 ns

Unit

 

 

 

 

 

 

Min

 

Max

 

 

 

 

 

 

 

 

 

 

Read Cycle

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tRC

 

Read Cycle Time

 

45

 

 

ns

tAA

 

Address to Data Valid

 

 

45

ns

tOHA

 

Data Hold from Address Change

10

 

 

ns

tACE

 

 

1 LOW and CE2 HIGH to Data Valid

 

 

45

ns

CE

 

tDOE

 

 

 

 

LOW to Data Valid

 

 

22

ns

OE

 

t

 

 

 

 

LOW to Low Z [10]

5

 

 

ns

OE

 

 

LZOE

 

 

 

 

 

 

 

 

 

 

 

t

 

 

 

 

HIGH to High Z [10, 11]

 

 

18

ns

OE

 

HZOE

 

 

 

 

 

 

 

 

 

 

 

t

 

 

 

 

 

LOW and CE

HIGH to Low Z [10]

10

 

 

ns

CE

1

 

 

LZCE

 

 

 

2

 

 

 

 

t

 

 

 

 

 

HIGH or CE

LOW to High Z [10, 11]

 

 

18

ns

CE

1

 

HZCE

 

 

2

 

 

 

 

 

tPU

 

 

1 LOW and CE2 HIGH to Power Up

0

 

 

ns

CE

 

 

tPD

 

 

1 HIGH or CE2 LOW to Power Down

 

 

45

ns

CE

 

Write Cycle [12]

 

 

 

 

 

 

 

 

 

 

 

tWC

 

Write Cycle Time

 

45

 

 

ns

tSCE

 

 

1 LOW and CE2 HIGH to Write End

35

 

 

ns

CE

 

 

tAW

 

Address Setup to Write End

35

 

 

ns

tHA

 

Address Hold from Write End

0

 

 

ns

tSA

 

Address Setup to Write Start

0

 

 

ns

tPWE

 

 

 

 

Pulse Width

 

35

 

 

ns

WE

 

 

 

tSD

 

Data Setup to Write End

25

 

 

ns

tHD

 

Data Hold from Write End

0

 

 

ns

t

 

 

 

 

LOW to High Z [10, 11]

 

 

18

ns

WE

 

HZWE

 

 

 

 

 

 

 

 

 

 

 

t

 

 

 

 

HIGH to Low Z [10]

10

 

 

ns

WE

 

 

LZWE

 

 

 

 

 

 

 

 

 

 

 

Notes

9.Test conditions for all parameters other than tri-state parameters assume signal transition time of 3 ns or less (1V/ns), timing reference levels of VCC(typ)/2, input pulse levels of 0 to VCC(typ), and output loading of the specified IOL/IOH as shown in “AC Test Loads and Waveforms” on page 4.

10.At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device.

11.tHZOE, tHZCE, and tHZWE transitions are measured when the outputs enter a high impedance state.

12.The internal write time of the memory is defined by the overlap of WE, CE1 = VIL, and CE2 = VIH. All signals must be ACTIVE to initiate a write and any of these signals can terminate a write by going INACTIVE. The data input setup and hold timing should be referenced to the edge of the signal that terminates the write.

Document #: 38-05684 Rev. *D

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Cypress CY62158E manual Parameter Description 45 ns Unit Min, Read Cycle, Write Cycle