CY7C1019BN
Document #: 001-06425 Rev. ** Page 3 of 8
AC Test Loads and WaveformsSwitching Characteristics[4] Over the Operating Range
Parameter Description
-12 -15
UnitMin. Max. Min. Max.
Read Cycle
tRC Read Cycle Time 12 15 ns
tAA Address to Data Valid 12 15 ns
tOHA Data Hold from Address Change 3 3 ns
tACE CE LOW to Data Valid 12 15 ns
tDOE OE LOW to Data Valid 6 7 ns
tLZOE OE LOW to Low Z 0 0 ns
tHZOE OE HIGH to High Z[5, 6] 67ns
tLZCE CE LOW to Low Z[6] 33 ns
tHZCE CE HIGH to High Z[5, 6] 67ns
tPU CE LOW to Power-Up 0 0 ns
tPD CE HIGH to Power-Down 12 15 ns
Write Cycle[7, 8]
tWC Write Cycle Time 12 15 ns
tSCE CE LOW to Write End 9 10 ns
tAW Address Set-Up to Write End 8 10 ns
tHA Address Hold from Write End 0 0 ns
tSA Address Set-Up to Write Start 0 0 ns
tPWE WE Pulse Width 8 10 ns
tSD Data Set-Up to Write End 6 8 ns
tHD Data Hold from Write End 0 0 ns
tLZWE WE HIGH to Low Z[6] 33 ns
tHZWE WE LOW to High Z[5, 6] 67ns
Notes:
4. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V, input pu lse levels of 0 to 3.0V, and output loading of the specified
IOL/IOH and 30-pF load capacitance.
5. tHZOE, tHZCE, and tHZWE are specified with a load capacitance of 5 pF as in part (b) of AC Test Loads. Transition is measured ±500 mV from steady-st ate voltage.
6. At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device.
7. The internal write time of the memory is defined by the overlap of CE LOW and WE LOW. CE and WE must be LOW to initiate a write, and the transition of any
of these signals can terminate the write. The input data set-up and hold timing should be referenced to the leading edge of the signal that terminates the write.
8. The minimum write cycle time for Write Cycle no. 3 (WE controlled, OE LOW) is the sum of tHZWE and tSD.
90%
10%
3.0V
GND
90%
10%
ALL INPUT PULSES
5V
OUTPUT
30 pF
INCLUDING
JIG AND
SCOPE
5V
OUTPUT
5 pF
INCLUDING
JIG AND
SCOPE
(a) (b)
≤ 3 ns ≤3ns
OUTPUT
R1 480ΩR1480Ω
R2
255Ω
R2
255Ω
167Ω
Equivalentto: THÉVENIN EQUIVALENT
1.73V
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