CY7C1019BN

Document #: 001-06425 Rev. ** Page 4 of 8

Data Retention Characteristics Over the Operating Range (L Version Only)

Parameter Description Conditions Min. Max. Unit

VDR VCC for Data Retention No input may exceed VCC + 0.5V

VCC = VDR = 2.0V,

CE > VCC – 0.3V,

VIN > VCC – 0.3V or VIN < 0.3V

2.0 V

ICCDR Data Retention Current 300 µA

tCDR[3] Chip Deselect to Data Retention Time 0 ns

tROperation Recovery Time 200 µs

Data Retention Waveform
3.0V3.0V
tCDR
VDR>2V
DATA RETENTION MODE
tR
CE
VCC
Switching Waveforms
Read Cycle No. 1[9, 10]

Read Cycle No. 2 (OE Controlled)[10, 11]

Notes:
9. Device is continuously selected. OE, CE = VIL.
10.WE is HIGH for read cycle.
11.Address valid prior to or coincident with CE transition LOW.
PREVIOUS DATA VALID DATA VALID
tRC
tAA
tOHA
ADDRESS
DATA OUT
50%
50%
DATA VALID
tRC
tACE
tDOE
tLZOE
tLZCE
tPU
HIGH IMPEDANCE
tHZOE
tHZCE
tPD
HIGH
OE
CE
ICC
ISB
IMPEDANCE
ADDRESS
DATAOUT
VCC
SUPPLY
CURRENT

[+] Feedback