CY7C1019BN
Document #: 001-06425 Rev. ** Page 4 of 8
Data Retention Characteristics Over the Operating Range (L Version Only)
Parameter Description Conditions Min. Max. Unit
VDR VCC for Data Retention No input may exceed VCC + 0.5V
VCC = VDR = 2.0V,
CE > VCC – 0.3V,
VIN > VCC – 0.3V or VIN < 0.3V
2.0 V
ICCDR Data Retention Current 300 µA
tCDR[3] Chip Deselect to Data Retention Time 0 ns
tROperation Recovery Time 200 µs
Data Retention Waveform3.0V3.0V
tCDR
VDR>2V
DATA RETENTION MODE
tR
CE
VCC
Switching WaveformsRead Cycle No. 1[9, 10]
Read Cycle No. 2 (OE Controlled)[10, 11]
Notes:
9. Device is continuously selected. OE, CE = VIL.
10.WE is HIGH for read cycle.
11.Address valid prior to or coincident with CE transition LOW.
PREVIOUS DATA VALID DATA VALID
tRC
tAA
tOHA
ADDRESS
DATA OUT
50%
50%
DATA VALID
tRC
tACE
tDOE
tLZOE
tLZCE
tPU
HIGH IMPEDANCE
tHZOE
tHZCE
tPD
HIGH
OE
CE
ICC
ISB
IMPEDANCE
ADDRESS
DATAOUT
VCC
SUPPLY
CURRENT