CY7C1019BN

Data Retention Characteristics Over the Operating Range (L Version Only)

Parameter

Description

Conditions

Min.

Max.

Unit

 

 

 

 

 

 

VDR

VCC for Data Retention

No input may exceed VCC + 0.5V

2.0

 

V

 

 

VCC = VDR = 2.0V,

 

 

 

ICCDR

Data Retention Current

 

300

A

CE > VCC – 0.3V,

 

tCDR[3]

Chip Deselect to Data Retention Time

0

 

ns

VIN > VCC – 0.3V or VIN < 0.3V

 

tR

Operation Recovery Time

 

200

 

s

Data Retention Waveform

 

 

DATA RETENTION MODE

 

VCC

3.0V

VDR > 2V

3.0V

 

tCDR

 

tR

CE

 

 

 

Switching Waveforms

Read Cycle No. 1[9, 10]

tRC

ADDRESS

tAA

tOHA

DATA OUT

PREVIOUS DATA VALID

DATA VALID

Read Cycle No. 2 (OE Controlled)[10, 11]

 

 

ADDRESS

 

 

 

 

 

tRC

 

CE

 

 

 

 

tACE

 

 

OE

 

tHZOE

 

 

tDOE

 

 

tHZCE

 

 

tLZOE

HIGH

DATA OUT

HIGH IMPEDANCE

DATA VALID

IMPEDANCE

 

 

 

tLZCE

tPD

 

VCC

tPU

ICC

SUPPLY

50%

 

50%

CURRENT

 

 

ISB

Notes:

9.Device is continuously selected. OE, CE = VIL.

10. WE is HIGH for read cycle.

11. Address valid prior to or coincident with CE transition LOW.

Document #: 001-06425 Rev. **

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Cypress CY7C1019BN manual Data Retention Waveform, Switching Waveforms, Parameter Description Conditions Min Max Unit