CY7C145, CY7C144

Figure 4. AC Test Loads and Waveforms

5V

R1 = 893Ω

OUTPUTOUTPUT

C = 30 pF

 

 

 

 

 

 

 

 

 

 

R2 = 347Ω

C = 30pF

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

RTH = 250Ω

OUTPUT

C = 5 pF

VTH = 1.4V

5V

R1 = 893Ω

R = 347Ω

(a) Normal Load (Load1)

(b) Thévenin Equivalent (Load 1)

(c) Three-State Delay (Load 3)

OUTPUT

 

 

 

 

 

 

3.0V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

C = 30 pF

10%

 

 

 

 

 

 

 

 

 

 

 

 

 

GND

 

 

 

 

 

 

 

 

 

 

 

 

 

 

3 ns

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Load (Load 2)

 

 

 

 

 

 

 

ALL INPUT PULSES

90%90%

10%

3 ns

Switching Characteristics Over the Operating Range[9]

 

 

 

 

 

 

7C144-15

7C144-25

7C144-35

7C144-55

 

Parameter

 

 

 

Description

7C145-15

7C145-25

7C145-35

7C145-55

Unit

 

 

 

 

 

 

Min

Max

Min

Max

Min

Max

Min

Max

 

READ CYCLE

 

 

 

 

 

 

 

 

 

 

 

 

 

tRC

 

 

Read Cycle Time

15

 

25

 

35

 

55

 

ns

tAA

 

 

Address to Data Valid

 

15

 

25

 

35

 

55

ns

tOHA

 

 

Output Hold From Address

3

 

3

 

3

 

3

 

ns

 

 

 

Change

 

 

 

 

 

 

 

 

 

tACE

 

 

CE

 

LOW to Data Valid

 

15

 

25

 

35

 

55

ns

tDOE

 

 

OE

LOW to Data Valid

 

10

 

15

 

20

 

25

ns

tLZOE[10, 11,12]

 

OE

Low to Low Z

3

 

3

 

3

 

3

 

ns

t

[10, 11,12]

 

OE

HIGH to High Z

 

10

 

15

 

20

 

25

ns

HZOE

 

 

 

 

 

 

 

 

 

 

 

 

 

tLZCE[10, 11,12]

 

CE

LOW to Low Z

3

 

3

 

3

 

3

 

ns

t

[10, 11,12]

 

CE

HIGH to High Z

 

10

 

15

 

20

 

25

ns

HZCE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tPU[12]

 

CE

LOW to Power-Up

0

 

0

 

0

 

0

 

ns

tPD[12]

 

CE

HIGH to Power-Down

 

15

 

25

 

35

 

55

ns

WRITE CYCLE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tWC

 

 

Write Cycle Time

15

 

25

 

35

 

55

 

ns

tSCE

 

 

CE

LOW to Write End

12

 

20

 

30

 

45

 

ns

tAW

 

 

Address Set-Up to Write End

12

 

20

 

30

 

45

 

ns

tHA

 

 

Address Hold From Write End

2

 

2

 

2

 

2

 

ns

tSA

 

 

Address Set-Up to Write Start

0

 

0

 

0

 

0

 

ns

tPWE

 

 

Write Pulse Width

12

 

20

 

25

 

40

 

ns

Notes

9.Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified IOI/IOH and 30-pF load capacitance.

10.At any given temperature and voltage condition for any given device, tHZCE is less than tLZCE and tHZOE is less than tLZOE.

11.Test conditions used are Load 3.

12.This parameter is guaranteed but not tested.

Document #: 38-06034 Rev. *D

Page 6 of 21

[+] Feedback

Page 6
Image 6
Cypress CY7C144, CY7C145 manual Switching Characteristics Over the Operating Range9

CY7C145, CY7C144 specifications

Cypress Semiconductor is renowned for its advanced memory solutions, and two of its noteworthy products are the CY7C144 and CY7C145, both of which serve as emerging leaders in the field of synchronous dynamic random-access memory (SDRAM). These memory chips provide high-speed data access, making them ideal for various applications, including networking, automotive, and industrial electronics.

The CY7C144 is a 4-Mbit SRAM, while its counterpart, the CY7C145, is an 8-Mbit SRAM. Both chips utilize a synchronous interface, which allows them to operate at clock rates that significantly enhance data retrieval speeds. Designed for low power consumption, these devices feature several power-saving modes, making them suitable for battery-operated applications.

One of the main features of the CY7C144 and CY7C145 is their support for burst read and write operations. This function enables the memory to deliver multiple bits of data sequentially with a single command, substantially increasing throughput. Additionally, both models come with a wide data bus, typically 16 bits, allowing for efficient data handling and alignment with a variety of systems.

The technology behind these chips includes static CMOS processes, which promote high performance and reliability under various operating environments. The CY7C144 and CY7C145 both guarantee a high level of data integrity, thanks to advanced error detection and correction features. This makes them especially valuable in applications where data accuracy is critical.

Another critical aspect is the integration of an on-chip address decoder for efficient memory addressing, minimizing delays during data access. This characteristic plays a crucial role in optimizing the overall system performance, particularly in high-bandwidth applications.

In terms of environmental resilience, these memories are designed to withstand a range of temperatures, making them robust enough for industrial applications. The CY7C144 and CY7C145 also comply with several industry standards, ensuring compatibility with a wide array of devices and systems.

In summary, the CY7C144 and CY7C145 by Cypress Semiconductor stand out due to their blend of high speed, low power consumption, and robust reliability. With advanced features like burst read/write capabilities, error detection, and temperature resilience, these memory chips are exceptional choices for modern electronic applications demanding speed and efficiency. Their continued evolution reflects Cypress's commitment to innovation in the semiconductor industry, catering to the growing needs of a data-driven world.