CY7C291A

CY7C292A/CY7C293A

Features

Windowed for reprogrammability

CMOS for optimum speed/power

High speed

20 ns (commercial)

25 ns (military)

Low power

660 mW (commercial and military)

Low standby power

220 mW (commercial and military)

EPROM technology 100% programmable

Slim 300-mil or standard 600-mil packaging available

5V ± 10% VCC, commercial and military

TTL-compatible I/O

Direct replacement for bipolar PROMs

Capable of withstanding >2001V static discharge

Functional Description

The CY7C291A, CY7C292A, and CY7C293A are high-perfor- mance 2K-word by 8-bit CMOS PROMs. They are functionally

2K x 8 Reprogrammable PROM

identical, but are packaged in 300-mil (7C291A, 7C293A) and 600-mil wide plastic and hermetic DIP packages (7C292A). The CY7C293A has an automatic power down feature which reduces the power consumption by over 70% when deselect- ed. The 300-mil ceramic package may be equipped with an erasure window; when exposed to UV light the PROM is erased and can then be reprogrammed. The memory cells uti- lize proven EPROM floating-gate technology and byte-wide in- telligent programming algorithms.

The CY7C291A, CY7C292A, and CY7C293A are plug-in re- placements for bipolar devices and offer the advantages of lower power, reprogrammability, superior performance and programming yield. The EPROM cell requires only 12.5V for the supervoltage and low current requirements allow for gang programming. The EPROM cells allow for each memory loca- tion to be tested 100%, as each location is written into, erased, and repeatedly exercised prior to encapsulation. Each PROM is also tested for AC performance to guarantee that after cus- tomer programming the product will meet DC and AC specifi- cation limits.

A read is accomplished by placing an active LOW signal on CS1, and active HIGH signals on CS2 and CS3. The contents of the memory location addressed by the address line (A0 A10) will become available on the output lines (O0 O7).

Logic Block Diagram

Pin Configurations

A0

 

 

 

O7

 

 

 

 

A1

 

 

 

 

A2

ROW

PROGRAM-

MULTI-

O6

MABLE

 

PLEXER

A3

ADDRESS

ARRAY

 

 

 

 

A4

 

 

 

O

 

 

 

 

5

A5

 

 

 

 

A6

ADDRESS

 

 

O4

DECODER

 

 

 

A7

 

 

 

O3

A8

 

 

 

 

 

 

 

A9

COLUMN

 

 

O2

 

ADDRESS

 

 

A10

 

POWER

 

 

 

 

 

O1

 

 

DOWN

 

 

 

7C293A

 

 

 

 

 

 

O0

CS1

 

 

 

 

CS2

 

 

 

 

CS3

 

 

 

C291A-1

DIP

Top ViewLCC/PLCC (Opaque Only)

Top View

A7

1

 

24

VCC

 

 

 

 

CC

 

 

 

A6

2

 

23

A

 

5 6 7

8

9

 

 

8

 

A A A

NC V

A

A

 

A

3

7C291A

22

A9

 

 

 

 

 

 

 

 

5

 

 

A10

 

4

3

2 1 28 27 26

 

A4

4 7C292A

21

 

A

A4

5

 

 

 

 

25

 

5 7C293A

 

CS1

 

 

 

 

10

A3

20

A3

6

7C291A

 

24

CS1

A2

6

 

19

CS

A

7

 

 

 

 

23

CS2

 

2

2

 

 

 

 

22

CS3

A1

7

 

18

CS3

A

8

 

 

 

 

 

1

 

 

 

 

21

NC

A0

8

 

17

O7

A0

9

7C293A

 

 

NC

10

 

20

O

 

 

 

 

O6

 

 

 

 

 

 

7

O0

9

 

16

O0 11

 

 

 

 

19

O6

O1

10

15

O5

 

12 1314151617 18

 

 

1 2

GND

 

 

 

 

O2

11

14

O4

 

3 4 5

 

 

O

O

NC O O

O

 

GND

12

13

O3

 

 

 

 

 

 

 

 

 

 

 

 

 

C291A-3

 

 

 

C291A-2

 

 

 

 

 

 

 

 

Window available on 7C291A and 7C293A only.

Cypress Semiconductor Corporation • 3901 North First Street • San Jose • CA 95134 • 408-943-2600 March 1986 – Revised May 1993

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Cypress CY7C291A, CY7C293A, CY7C292A manual Features, Functional Description, Logic Block Diagram

CY7C291A, CY7C292A, CY7C293A specifications

The Cypress CY7C293A, CY7C292A, and CY7C291A are high-performance static random-access memory (SRAM) devices designed for various applications requiring fast access and low power consumption. These memory chips are particularly suitable for use in telecommunications, networking, industrial, automotive, and consumer electronics.

One key feature of the CY7C293A model is its 2 megabit capacity, which offers a vast storage solution for applications needing quick read and write capabilities. The CY7C292A and CY7C291A, on the other hand, provide 1 megabit and 256 kilobits, respectively, catering to a range of memory needs. The devices utilize a 16-bit organization, optimally balancing capacity and access speed.

A standout technology is the use of a fast access time, with the CY7C293A achieving speeds of up to 12 nanoseconds. This rapid access capability significantly enhances the performance of systems that depend on swift data retrieval. The SRAM devices are built using Cypress’s unique CMOS technology, which not only supports a dense manufacturing process but also ensures low power consumption. The standby current is minimal, making these chips suitable for battery-powered applications where energy efficiency is critical.

The packaging options available for the CY7C293A, CY7C292A, and CY7C291A include various forms such as 28-pin DIP and 32-pin TSOP, allowing for ease of integration into different circuit layouts. The devices feature an asynchronous operation, providing straightforward interfacing with no need for external clocks, which simplifies system design.

In terms of reliability, these SRAMs are equipped with robust features that ensure data integrity and stability. They offer a wide operating voltage range, typically from 4.5V to 5.5V, accommodating different power supply configurations. Furthermore, the chips are designed to withstand multiple read/write cycles, making them ideal for applications that demand frequent data manipulation.

Overall, the Cypress CY7C293A, CY7C292A, and CY7C291A SRAM devices represent a versatile memory solution that combines speed, efficiency, and reliability, making them a favored choice for engineers and designers working across various technological domains. Their adaptability to different applications ensures that they remain relevant in the rapidly evolving landscape of electronics and memory technology.