CY7C291A

CY7C292A/CY7C293A

Electrical Characteristics Over the Operating Range[3,4] (continued)

 

 

 

 

 

 

 

7C291AL-35, 50

7C291A-35, 50

 

 

 

 

 

 

 

 

7C292AL-35, 50

7C292A-35, 50

 

 

 

 

 

 

 

 

7C293AL-35, 50

7C293A-35, 50

 

 

 

 

 

 

 

 

 

 

 

Parameter

Description

 

 

Test Conditions

Min.

Max.

Min.

Max.

Unit

 

 

 

 

 

 

 

 

VOH

Output HIGH Voltage

VCC = Min., IOH = 4.0 mA

2.4

 

2.4

 

V

VOL

Output LOW Voltage

VCC = Min., IOL = 16.0 mA

 

0.4

 

0.4

V

VIH

Input HIGH Voltage

Guaranteed Input Logical

2.0

 

2.0

 

V

 

 

 

HIGH Voltage for All Inputs

 

 

 

 

 

 

 

 

 

 

 

 

 

VIL

Input LOW Voltage

Guaranteed Input Logical

 

0.8

 

0.8

V

 

 

 

LOW Voltage for All Inputs

 

 

 

 

 

 

 

 

 

 

 

 

 

IIX

Input Load Current

GND < VIN < VCC

10

+10

10

+10

A

VCD

Input Diode Clamp Voltage

 

 

 

 

 

Note 4

 

 

IOZ

Output Leakage Current

GND < VOUT < VCC,

10

+10

10

+10

A

 

 

 

Output Disabled

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

I

OS

Output Short Circuit Current[5]

V

CC

= Max., V

= GND

20

90

20

90

mA

 

 

 

OUT

 

 

 

 

 

ICC

VCC Operating Supply Current

VCC = Max.,

Commercial

 

60

 

90

mA

 

 

 

VIN = 2.0V

 

 

 

 

 

 

 

 

 

Military

 

 

 

90

 

 

 

 

IOUT=0 mA

 

 

 

 

 

 

 

 

 

 

 

 

 

ISB

Standby Supply Current

VCC = Max.,

Commercial

 

30

 

30

mA

 

 

(7C293A Only)

CS1 =VIH

 

 

 

 

 

 

 

 

Military

 

 

 

40

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VPP

Programming Supply Voltage

 

 

 

 

12

13

12

13

V

IPP

Programming Supply Current

 

 

 

 

 

50

 

50

mA

VIHP

Input HIGH Programming Voltage

 

 

 

 

3.0

 

3.0

 

V

VILP

Input LOW Programming Voltage

 

 

 

 

 

0.4

 

0.4

V

Capacitance[4]

Parameter

Description

Test Conditions

Max.

Unit

 

 

 

 

 

CIN

Input Capacitance

TA = 25° C, f = 1 MHz,

10

pF

 

 

VCC = 5.0V

 

 

COUT

Output Capacitance

10

pF

 

4

Page 4
Image 4
Cypress CY7C291A, CY7C293A, CY7C292A manual Capacitance4, Parameter Description Test Conditions Max Unit

CY7C291A, CY7C292A, CY7C293A specifications

The Cypress CY7C293A, CY7C292A, and CY7C291A are high-performance static random-access memory (SRAM) devices designed for various applications requiring fast access and low power consumption. These memory chips are particularly suitable for use in telecommunications, networking, industrial, automotive, and consumer electronics.

One key feature of the CY7C293A model is its 2 megabit capacity, which offers a vast storage solution for applications needing quick read and write capabilities. The CY7C292A and CY7C291A, on the other hand, provide 1 megabit and 256 kilobits, respectively, catering to a range of memory needs. The devices utilize a 16-bit organization, optimally balancing capacity and access speed.

A standout technology is the use of a fast access time, with the CY7C293A achieving speeds of up to 12 nanoseconds. This rapid access capability significantly enhances the performance of systems that depend on swift data retrieval. The SRAM devices are built using Cypress’s unique CMOS technology, which not only supports a dense manufacturing process but also ensures low power consumption. The standby current is minimal, making these chips suitable for battery-powered applications where energy efficiency is critical.

The packaging options available for the CY7C293A, CY7C292A, and CY7C291A include various forms such as 28-pin DIP and 32-pin TSOP, allowing for ease of integration into different circuit layouts. The devices feature an asynchronous operation, providing straightforward interfacing with no need for external clocks, which simplifies system design.

In terms of reliability, these SRAMs are equipped with robust features that ensure data integrity and stability. They offer a wide operating voltage range, typically from 4.5V to 5.5V, accommodating different power supply configurations. Furthermore, the chips are designed to withstand multiple read/write cycles, making them ideal for applications that demand frequent data manipulation.

Overall, the Cypress CY7C293A, CY7C292A, and CY7C291A SRAM devices represent a versatile memory solution that combines speed, efficiency, and reliability, making them a favored choice for engineers and designers working across various technological domains. Their adaptability to different applications ensures that they remain relevant in the rapidly evolving landscape of electronics and memory technology.