Delta Electronics Series Q48DR manual Parameter, NOTES and CONDITIONS, Q48DR1R833NRFA, Efficiency

TECHNICAL SPECIFICATIONS (TA=25°C, airflow rate=300 LFM, Vin=48Vdc, nominal Vout unless otherwise noted.)

PARAMETER	NOTES and CONDITIONS			Q48DR1R833NRFA
				Min.		Typ.		Max.	Units
ABSOLUTE MAXIMUM RATINGS
Input Voltage
Continuous								80	Vdc
Transient (100ms)	<100ms							100	Vdc
Operating Temperature	Please refer to figure 27 for measuring point			-40				114	°C
Storage Temperature				-55				125	°C
Input/Output Isolation Voltage				1500					Vdc
INPUT CHARACTERISTICS
Operating Input Voltage				36		48		75	Vdc
Input Under-Voltage Lockout
Turn-On Voltage Threshold				33		34		35	Vdc
Turn-Off Voltage Threshold				31		32		33	Vdc
Lockout Hysteresis Voltage				1		2		3	Vdc
Maximum Input Current	100%load, 36Vin							2.9	A
No-Load Input Current						100		150	mA
Off Converter Input Current						5		10	mA
Inrush Current(I2t)						0.015			A2s
Input Reflected-Ripple Current	P-P thru 12µH inductor, 5Hz to 20MHz					10			mA
Input Voltage Ripple Rejection	120Hz					50			dB
OUTPUT CHARACTERISTICS
Output Voltage Set Point	Vin=48V, Io=Io.max, Tc=25 ℃	Vout 1		1.771		1.800		1.829	Vdc
		Vout 2		3.247		3.300		3.353
Output Voltage Regulation
Over Load	Io1=Io, min to Io, max, Io2=0A	Vout 1				±5		±10	mV
	Io2=Io, min to Io, max, Io1=0A	Vout 2
Over Line	Vin=36V to 75V,Io1=Io2=full load	Vout 1			±3		±10		V
		Vout 2
Cross Regulation	Worse Case					±5		±10	mV
Over Temperature	Tc=-40 ℃ to 85 ℃				±15		±50
Total Output Voltage Range	Over sample load, line and temperature	Vout 1		1.746				1.854	V
		Vout 2		3.201				3.399	V
Output Voltage Ripple and Noise	5Hz to 20MHz bandwidth
Peak-to-Peak	Io1, Io2 Full Load, 1µF ceramic, 10µF tantalum	Vout 1				40		80	mV
		Vout 2				40		80
RMS	Io1, Io2 Full Load, 1µF ceramic, 10µF tantalum	Vout 1				10		30	mV
		Vout 2			10		30
Operating Output Current Range		Vout 1		0				15	A
		Vout 2		0				15
Output DC Current-Limit Inception		Vout 1		100%				150%
		Vout 2	100%				150%
DYNAMIC CHARACTERISTICS
Output Voltage Current Transient	48V, 10µF Tan & 1µF Ceramic load cap, 0.1A/µs
Positive Step Change in Output Current	Iout1from 50% Io, max to 75% Io, max	Vout 1				100			mV
		Vout 2			100
Negative Step Change in Output Current	Iout2 from 75% Io, max to 50% Io, max	Vout 1				100			mV
		Vout 2				100
Cross dynamic	Each channel independence						20		mV
Settling Time (within 1% Vout nominal)						150			US
Turn-On Transient
Start-up Time, From On/Off Control						10		15	MS
Start-up Time, From Input						10		15	mS
Maximum Output Capacitance	Full load; 5% overshoot of Vout at startup	Vout 1						10000	µF
		Vout 2						10000
EFFICIENCY
100% Load	Iout1, Iout2 full load, 48vdc Vin					88			%
60% Load	Iout1, Iout2 60% of full load, 48vdc Vin					88			%
ISOLATION CHARACTERISTICS
Input to Output				1500					Vdc
Isolation Resistance				10					MΩ
Isolation Capacitance						3000			pF
FEATURE CHARACTERISTICS
Switching Frequency						350			kHz
ON/OFF Control, (Logic Low-Module ON)
Logic Low	Von/off at Ion/off=1.0mA			0				0.8	V
Logic High	Von/off at Ion/off=0.0 µA							18	V
ON/OFF Current	Ion/off at Von/off=0.0V							1	mA
Leakage Current	Logic High, Von/off=15V							50	uA
Output Voltage Trim Range	Pout ≦ max rated power			-10				+10	%
Output Over-Voltage Protection	Over full temp range; %of nominal Vout			115		122		130	%
GENERAL SPECIFICATIONS
MTBF	Io=80% of Io, max; Ta=25°C,300FLM					3.0			M hours
Weight						26.5			grams
Over-Temperature Shutdown	Please refer to figure 27 for measuring point					122			°C

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DS_Q48DR1R833_03162007