July 2003
2003 Fairchild Semiconductor Corp. FDD6690A Rev EW)
FDD6690A

30V N-Channel PowerTrench MOSFET

General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench process that
has been especially tailored to minimize the on state
resistance and yet maintain low gate charge for
superior switching performance.
Applications
• DC/DC converter
• Motor Drives
Features
• 46 A, 30 V RDS(ON) = 12 mΩ @ VGS = 10 V
RDS(ON) = 14 mΩ @ VGS = 4.5 V
• Low gate charge
• Fast Switching Speed
• High performance trench technology for extremely
low RDS(ON)
G
S
D
TO-252

D-PAK

(TO-252)

S
G
D
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol Parameter Ratings Units
VDSS Drain-Source Voltage 30 V
VGSS Gate-Source Voltage ±20 V
IDContinuous Drain Current @TC=25°C (Note 3) 46 A
@TA=25°C (Note 1a) 12
Pulsed (Note 1a) 100
Power Dissipation @TC=25°C (Note 3) 56
@TA=25°C (Note 1a) 3.3
PD
@TA=25°C (Note 1b) 1.5
W
TJ, TSTG Operating and Storage Junction Temperature Range –55 to +175 °C

Thermal Characteristics

RθJC Thermal Resistance, Junction-to-Case (Note 1) 2.7 °C/W
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 45
RθJA (Note 1b) 96

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape width Quantity
FDD6690A FDD6690A D-PAK (TO-252) 13’’ 12mm 2500 units
FDD6690A