Fairchild FDD6690A, MOSFET manual 30V N-Channel PowerTrench Mosfet, Thermal Characteristics

July 2003

FDD6690A

FDD6690A

30V N-Channel PowerTrench® MOSFET

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance.

Applications

∙DC/DC converter

∙Motor Drives

Features

∙46 A, 30 V RDS(ON) = 12 mΩ @ VGS = 10 V RDS(ON) = 14 mΩ @ VGS = 4.5 V

∙Low gate charge

∙Fast Switching Speed

∙High performance trench technology for extremely

low RDS(ON)

D

D

G

SG

	D-PAK
	TO-252
	(TO-252)				S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol	Parameter			Ratings		Units
VDSS	Drain-Source Voltage			30		V
VGSS	Gate-Source Voltage			±20		V
ID	Continuous Drain Current	@TC=25°C	(Note 3)	46		A
		@TA=25°C	(Note 1a)	12
		Pulsed	(Note 1a)	100
PD	Power Dissipation	@TC=25°C	(Note 3)	56		W
		@TA=25°C	(Note 1a)	3.3
		@TA=25°C	(Note 1b)	1.5
TJ, TSTG	Operating and Storage Junction Temperature Range			–55 to +175		°C
Thermal Characteristics
RθJC	Thermal Resistance, Junction-to-Case		(Note 1)	2.7		°C/W
RθJA	Thermal Resistance, Junction-to-Ambient		(Note 1a)	45
RθJA			(Note 1b)	96

Package Marking and Ordering Information

Device Marking	Device	Package	Reel Size	Tape width	Quantity
FDD6690A	FDD6690A	D-PAK (TO-252)	13’’	12mm	2500 units

©2003 Fairchild Semiconductor Corp. FDD6690A Rev EW)