FDD6690A Rev. EW)
Typical Characteristics
0
2
4
6
8
10
0 5 10 15 20 25
Qg, GATE CHARGE (nC)
VGS, GATE-SOURCE VOLTAGE (V)
ID = 12 A VDS = 10V
15V
20V
0
300
600
900
1200
1500
1800
0 5 10 15 20 25 30
VDS, DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
Ciss
Crss
Coss
f = 1MHz
VGS = 0 V

Figure 7. Gate Charge Characteristics Figure 8. Capacitance Characteristics

0.01
0.1
1
10
100
1000
0.1 110 100
VDS, DRAIN-SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
DC
1s
100ms
RDS(ON) LIMIT
VGS = 4.5V
SINGLE PULSE
RθJA = 96oC/W
TA = 25oC
10ms
1ms
100µs
10
0
20
40
60
80
100
0.01 0.1 110 100
t1, TIME (sec)
P(pk), PEAK TRANSIENT POWER (W)
SINGLE PULSE
RθJA = 96°C/W
TA = 25°C

Figure 9. Maximum Safe Operating Area Figure 10. Single Pulse Maximum

Power Dissipation

0.0001
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 110 100 1000
t1, TIME (sec)
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
RθJA(t) = r(t) * RθJARθJA = 96 °C/WTJ - TA = P * RθJA(t)Duty Cycle, D = t1 / t2P(pk)
t1
t2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5

Figure 11. Transient Thermal Response Curve

Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design.
FDD6690A