Fairchild FDD6690A, MOSFET manual Gate Charge Characteristics

Typical Characteristics

FDD6690A

	10
(V)			ID = 12 A		VDS = 10V		20V
		8
VOLTAGE
		6			15V
SOURCE		4
, GATE-		2
GS
V
		0
		0	5	10	15	20	25

Qg, GATE CHARGE (nC)

Figure 7. Gate Charge Characteristics

	1000
(A)	100	RDS(ON) LIMIT		100µs
				1ms
			10ms
CURRENT
	10		100ms
			1s
			10
, DRAIN
	1		DC
		VGS = 4.5V
		SINGLE PULSE
D
I	0.1	RθJA = 96oC/W
		TA = 25oC
	0.01
	0.1	1	10	100

VDS, DRAIN-SOURCE VOLTAGE (V)

Figure 9. Maximum Safe Operating Area

	1800					f = 1MHz
						VGS = 0 V
	1500
(pF)					Ciss
	1200
CAPACITANCE	900
	600			Coss
	300
		Crss
	0
	0	5	10	15	20	25	30

VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 8. Capacitance Characteristics

	100
(W)				SINGLE PULSE
				RθJA = 96°C/W
POWER	80
				TA = 25°C
TRANSIENT	60
	40
PEAK	20
P(pk),
	0
	0.01	0.1	1	10	100
			t1, TIME (sec)

Figure 10. Single Pulse Maximum

Power Dissipation

	TRANSIENT THERMAL RESISTANCE	1
r(t), NORMALIZED EFFECTIVE			D = 0.5
			0.2						RθJA(t) = r(t) * RθJA
		0.1	0.1						RθJA = 96 °C/W
			0.05
			0.02						P(pk)
		0.01		0.01					t1
									t2
		0.001		SINGLE PULSE					TJ - TA = P * RθJA(t)
									Duty Cycle, D = t1 / t2
		0.0001
		0.0001		0.001	0.01	0.1	1	10	100	1000
							t1, TIME (sec)

Figure 11. Transient Thermal Response Curve

Thermal characterization performed using the conditions described in Note 1b.

Transient thermal response will change depending on the circuit board design.

FDD6690A Rev. EW)