FDD6690A Rev. EW)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Drain-Source Avalanche Ratings (Note 2)
EAS Drain-Source Avalanche Energy Single Pulse, VDD = 15 V, ID= 12A 180 mJ
IAS Drain-Source Avalanche Current 12 A
Off Characteristics
BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA30 V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient ID = 250 µA,Referenced to 25°C24 mV/°C
IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1µA
IGSS Gate–Body Leakage VGS = ±20 V, VDS = 0 V ±100 nA
On Characteristics (Note 2)
VGS(th)Gate Threshold Voltage VDS = VGS, ID = 250 µA11.9 3V
∆VGS(th)
∆TJ
Gate Threshold Voltage
Temperature Coefficient ID = 250 µA,Referenced to 25°C–5 mV/°C
RDS(on) Static Drain–Source
On–Resistance VGS = 10 V, ID = 12 A
VGS = 4.5 V, ID = 10 A
VGS = 10 V, ID = 12 A,TJ=125°C
7.7
9.9
11.4
12
14
19
mΩ
ID(on) On–State Drain Current VGS = 10 V, VDS = 5 V 50 A
gFS Forward Transconductance VDS = 10 V, ID = 12 A 47 S
Dynamic Characteristics
Ciss Input Capacitance 1230 pF
Coss Output Capacitance 325 pF
Crss Reverse Transfer Capacitance
VDS = 15 V, V GS = 0 V,
f = 1.0 MHz 150 pF
RGGate Resistance VGS = 15 mV, f = 1.0 MHz 1.5 pF
Switching Characteristics (Note 2)
td(on) Turn–On Delay Time 10 19 ns
trTurn–On Rise Time 7 13 ns
td(off) Turn–Off Delay Time 29 46 ns
tfTurn–Off Fall Time
VDD = 15 V, ID = 1 A,
VGS = 10 V, RGEN = 6 Ω
12 21 ns
QgTotal Gate Charge 13 18 nC
Qgs Gate–Source Charge 3.5 nC
Qgd Gate–Drain Charge
VDS = 15V, ID = 12 A,
VGS = 5 V 5.1 nC
FDD6690A