Fairchild MOSFET manual Electrical Characteristics, Off Characteristics, On Characteristics Note

Electrical Characteristics		TA = 25°C unless otherwise noted
Symbol	Parameter	Test Conditions		Min	Typ	Max	Units
Drain-Source Avalanche Ratings (Note 2)
EAS	Drain-Source Avalanche Energy	Single Pulse, VDD = 15 V, ID= 12A				180	mJ
IAS	Drain-Source Avalanche Current					12	A
Off Characteristics
BVDSS	Drain–Source Breakdown Voltage	VGS = 0 V,	ID = 250 μA	30			V
ΔBVDSS	Breakdown Voltage Temperature	μ	°		24		°
ΔTJ	Coefficient	ID = 250 A,Referenced to 25 C					mV/ C
IDSS	Zero Gate Voltage Drain Current	VDS = 24 V,	VGS = 0 V			1	μ
							A
IGSS	Gate–Body Leakage	VGS = ±20 V,	VDS = 0 V			±100	nA
On Characteristics (Note 2)
VGS(th)	Gate Threshold Voltage	VDS = VGS,	ID = 250 μA	1	1.9	3	V
ΔVGS(th)	Gate Threshold Voltage	ID = 250 μA,Referenced to 25°C			–5		mV/°C
ΔTJ	Temperature Coefficient
RDS(on)	Static Drain–Source	VGS = 10 V,	ID = 12 A		7.7	12	mΩ
	On–Resistance	VGS = 4.5 V,	ID = 10 A		9.9	14
			°		11.4	19
		VGS = 10 V, ID = 12 A,TJ=125 C
ID(on)	On–State Drain Current	VGS = 10 V,	VDS = 5 V	50			A
gFS	Forward Transconductance	VDS = 10 V,	ID = 12 A		47		S
Dynamic Characteristics
Ciss	Input Capacitance	VDS = 15 V,	V GS = 0 V,		1230		pF
Coss	Output Capacitance				325		pF
		f = 1.0 MHz
Crss	Reverse Transfer Capacitance				150		pF
RG	Gate Resistance	VGS = 15 mV,	f = 1.0 MHz		1.5		pF
Switching Characteristics (Note 2)
td(on)	Turn–On Delay Time				10	19	ns
tr	Turn–On Rise Time	VDD = 15 V,	ID = 1 A,		7	13	ns
td(off)	Turn–Off Delay Time	VGS = 10 V,	RGEN = 6 Ω		29	46	ns
tf	Turn–Off Fall Time				12	21	ns
Qg	Total Gate Charge	VDS = 15V,	ID = 12 A,		13	18	nC
Qgs	Gate–Source Charge				3.5		nC
		VGS = 5 V
Qgd	Gate–Drain Charge				5.1		nC

FDD6690A

FDD6690A Rev. EW)