MS-7636
▶DRAM Timing Mode
Select whether DRAM timing is controlled by the SPD (Serial Presence Detect) EE- PROM on the DRAM module. Setting to [Auto] enables DRAM timings and the following “Advance DRAM Configuration”
▶Advance DRAM Configuration Press <Enter> to enter the
▶CH1/ CH2 1T/2T Memory Timing
This item controls the SDRAM command rate. Select [1N] makes SDRAM signal controller to run at 1N (N=clock cycles) rate. Selecting [2N] makes SDRAM signal controller run at 2N rate.
▶CH1/ CH2 CAS Latency (CL)
This controls the CAS latency, which determines the timing delay (in clock cycles) before SDRAM starts a read command after receiving it.
▶CH1/ CH2 tRCD
When DRAM is refreshed, both rows and columns are addressed separately. This setup item allows you to determine the timing of the transition from RAS (row ad- dress strobe) to CAS (column address strobe). The less the clock cycles, the faster the DRAM performance.
▶CH1/ CH2 tRP
This setting controls the number of cycles for Row Address Strobe (RAS) to be allowed to precharge. If insufficient time is allowed for the RAS to accumulate its charge before DRAM refresh, refresh may be incomplete and DRAM may fail to retain data. This item applies only when synchronous DRAM is installed in the sys- tem.
▶CH1/ CH2 tRAS
This setting determines the time RAS takes to read from and write to memory cell. ▶CH1/ CH2 tRFC
This setting determines the time RFC takes to read from and write to a memory cell.
▶CH1/ CH2 tWR
Minimum time interval between end of write data burst and the start of a precharge command. Allows sense amplifiers to restore data to cells.
▶CH1/ CH2 tWTR
Minimum time interval between the end of write data burst and the start of a col-
▶CH1/ CH2 tRRD
Specifies the
