Philips Semiconductors Product specification
Logic level TOPFET PIP3119-P
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS Continuous drain source voltage1-50V
IDContinuous drain current VIS = 5 V; Tmb = 25˚C - self - A
limited
IDContinuous drain current VIS = 5 V; Tmb ≤ 121˚C - 20 A
IIContinuous input current -5 5 mA
IIRM Repetitive peak input current δ ≤ 0.1, tp = 300 µs -50 50 mA
PDTotal power dissipation Tmb ≤ 25˚C - 90 W
Tstg Storage temperature -55 175 ˚C
TjContinuous junction temperature2normal operation - 150 ˚C
Tsold Lead temperature during soldering - 260 ˚C
ESD LIMITING VALUE
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCElectrostatic discharge capacitor Human body model; - 2 kV
voltage C = 250 pF; R = 1.5 kΩ
OVERVOLTAGE CLAMPING LIMITING VALUES
At a drain source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Inductive load turn-off IDM = 20 A; VDD ≤ 20 V
EDSM Non-repetitive clamping energy Tmb ≤ 25˚C - 350 mJ
EDRM Repetitive clamping energy Tmb ≤ 95˚C; f = 250 Hz - 45 mJ
OVERLOAD PROTECTION LIMITING VALUE
With an adequate protection supply provided via the input pin, TOPFET can protect itself from two types of overload
- overtemperature and short circuit load.
SYMBOL PARAMETER REQUIRED CONDITION MIN. MAX. UNIT
VDS Drain source voltage34 V ≤ VIS ≤ 5.5 V 0 35 V
THERMAL CHARACTERISTIC
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Thermal resistance
Rth j-mb Junction to mounting base - - 1.25 1.39 K/W
1 Prior to the onset of overvoltage clamping. For voltages above this value, safe operation is limited by the overvoltage clamping energy.
2 A higher Tj is allowed as an overload condition but at the threshold Tj(TO) the over temperature trip operates to protect the switch.
3 All control logic and protection functions are disabled during conduction of the source drain diode.
May 2001 2 Rev 1.000