NXP Semiconductors PIP3119-P Logic level TOPFET PIP3119-P

Philips Semiconductors Product specification

Logic level TOPFET PIP3119-P

Limits are for -40˚C ≤ Tmb ≤ 150˚C; typicals are for Tmb = 25˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Off-state VIS = 0 V

V(CL)DSS Drain-source clamping voltage ID = 10 mA 50 - - V

IDM = 4 A; tp ≤ 300 µs; δ ≤ 0.01 50 60 70 V

IDSS Drain source leakage current VDS = 40 V - - 100 µA

Tmb = 25˚C - 0.1 10 µA

On-state VIS ≥ 4.4 V; tp ≤ 300 µs; δ ≤ 0.01

RDS(ON) Drain-source resistance IDM = 10 A - - 52 mΩ

Tmb = 25˚C - 22 28 mΩ

VIS = 5 V; Tmb = 25˚C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Short circuit load

IDDrain current limiting VDS = 13 V 28.5 43 57 A

4.4 V ≤ VIS ≤ 5.5 V; 21 - 65 A

-40˚C ≤ Tmb ≤ 150˚C

Overload protection

PD(TO) Overload power threshold device trips if PD > PD(TO) 75 185 250 W

TDSC Characteristic time which determines trip time1200 380 600 µs

Overtemperature protection

Tj(TO) Threshold junction 150 170 - ˚C

temperature2

1 Trip time td sc varies with overload dissipation PD according to the formula td sc ≈ TDSC / ln[ PD / PD(TO)].

2 This is independent of the dV/dt of input voltage VIS.

May 2001 3 Rev 1.000