Schottky Barrier Diodes (SBD)
Publication date: November 2008 SKH00238AED 1
This product complies with the RoHS Directive (EU 2002/95/EC).
MA2YJ50Silicon epitaxial planar type
For rectification
Features
Forward current (Average) IF(AV) = 3.0 A rectification is possible.
Low forward voltage VF : 0.55 V (max.)
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage VR40 V
Forward current (Average) *1IF(AV) 3.0 A
Non-repetitive peak forward surge current
IFSM
50 *2A
15 *3A
Junction temperature Tj150 °C
Storage temperature Tstg –55 to +150 °C
Note) *1: Lead temperature: Tl = 60°C, DC wave on
*2: Rectangle wave 1 cycle (Pulse width = 50 ms, non-repetitive peak current)
*3: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Electrical Characteristics Ta = 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage
VF1 IF = 1.0 A 0.35 0.44
V
VF2 IF = 3.0 A 0.47 0.55
Reverse current IRVR = 40 V 40 200 mA
Terminal capacitance CtVR = 10 V, f = 1 MHz 70 pF
Reverse recovery time *trr
IF = IR = 100 mA, Irr = 10 mA,
RL = 100 W25 ns
Thermal resistance (j-a) Rth(j-a)
Mounted on an alumina PC board 110
°C/W
Mounted on a glass epoxy PC board 160
Thermal resistance (j-l) Rth(j-l) 60 °C/W
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3. *: trr measurement circuit
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
Rs = 50 Ω
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
tp = 2 µs
tr = 0.35 ns
δ = 0.05
IF = IR = 100 mA
RL = 100 Ω
10%
Input Pulse Output Pulse
Irr = 10 mA
trtp
trr
VR
IF
t
t
A
Package
Code
Mini2-F1
Pin Name
1: Anode
2: Cathode