Philips Semiconductors Product specification
TOPFET high side switch BUK216-50YT SMD version LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VBG Continuous off-state supply voltage 0 50 V
ILContinuous load current Tmb ≤ 140˚C - 10 A
PDTotal power dissipation Tmb ≤ 25˚C - 98 W
Tstg Storage temperature -55 175 ˚C
TjContinuous junction temperature1- 150 ˚C
Tsold Mounting base temperature during soldering - 260 ˚C
Reverse battery voltages2
-VBG Continuous reverse voltage - 16 V
-VBG Peak reverse voltage - 32 V
Application information
RI, RSExternal resistors3to limit input, status currents 3.2 - kΩ
Input and status
II, ISContinuous currents -5 5 mA
II, ISRepetitive peak currents δ ≤ 0.1, tp = 300 µs -50 50 mA
Inductive load clamping IL = 15 A, VBG = 16 V
EBL Non-repetitive clamping energy Tj = 150 ˚C prior to turn-off - 380 mJ
ESD LIMITING VALUE
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCElectrostatic discharge capacitor Human body model; - 2 kV
voltage C = 250 pF; R = 1.5 kΩ
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Thermal resistance4
Rth j-mb Junction to mounting base - - 1.0 1.27 K/W
1 For normal continuous operation. A higher Tj is allowed as an overload condition but at the threshold Tj(TO) the over temperature trip operates
to protect the switch.
2 Reverse battery voltage is allowed only with external resistors to limit the input and status currents to a safe value. The connected load must
limit the reverse load current. The internal ground resistor limits the reverse battery ground current. Power is dissipated and the Tj
rating must be observed.
3 To limit currents during reverse battery and transient overvoltages (positive or negative).
4 Of the output power MOS transistor.
March 2002 2 Rev 1.200