Philips Semiconductors Product specification
TOPFET high side switch BUK216-50YT SMD version OVERLOAD PROTECTION / DETECTION CHARACTERISTICS
6 V ≤ VBG ≤ 35 V, limits are at -40˚C ≤ Tmb ≤ 150˚C and typicals at Tmb = 25 ˚C unless otherwise stated.
Refer to TRUTH TABLE.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Overload protection VBL = VBG
IL(lim) Load current limiting VBG ≥ 9 V 10 15 21 A
Short circuit load detection Status indication only
VBL(TO) Battery load threshold voltage1VBG = 16 V 8 10 12 V
VBG = 35 V 15 20 25 V
Overtemperature protection
Tj(TO) Threshold junction 150 170 190 ˚C
temperature2
SWITCHING CHARACTERISTICS
Tmb = 25 ˚C, VBG = 13 V, for resistive load RL = 13 Ω.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
During turn-on from input going high
td on Delay time to 10% VL-4060µs
dV/dton Rate of rise of load voltage 30% to 70% VL- 0.5 1 V/µs
t on Total switching time to 90% VL- 160 225 µs
During turn-off3from input going low
td off Delay time to 90% VL- 70 100 µs
dV/dtoff Rate of fall of load voltage 70% to 30% VL- 0.5 1 V/µs
t off Total switching time to 10% VL- 95 130 µs
CAPACITANCES
Tmb = 25 ˚C; f = 1 MHz; VIG = 0 V. designed in parameters.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Cig Input capacitance VBG = 13 V - 15 20 pF
Cbl Output capacitance VBL = 13 V - 425 600 pF
Csg Status capacitance VSG = 5 V - 11 15 pF
1 The battery to load threshold voltage for short circuit detection is proportional to the battery supply voltage.
2 Latched protection. After cooling below the threshold temperature the switch will resume normal operation only after the input has been
toggled low.
3 For measurement purposes an Input pulse of 1.5ms is used to ensure the device is stabilised in the on state.
March 2002 6 Rev 1.200