Philips Semiconductors Product specification
TOPFET high side switch BUK216-50YT
SMD version
STATIC CHARACTERISTICS
Limits are at -40˚C ≤ Tmb ≤ 150˚C and typicals at Tmb = 25˚C unless otherwise stated.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Clamping voltages
VBG Battery to ground IG = 1 mA 50 55 65 V
VBL Battery to load IL = IG = 1 mA 50 55 65 V
-VLG Negative load to ground IL = 10 mA 18 23 28 V
-VLG Negative load voltage1IL = 15 A; tp = 300 µs202530V
Supply voltage battery to ground
VBG Operating range25.5 - 35 V
Currents 9 V ≤ VBG ≤ 16 V
IBQuiescent current3VLG = 0 V - - 20 µA
Tmb = 25˚C - 0.1 2 µA
ILOff-state load current4VBL = VBG --20µA
Tmb = 25˚C - 0.1 1 µA
IGOperating current5IL = 0 A - 2 4 mA
ILNominal load current6VBL = 0.5 V Tmb = 85˚C - - - A
Resistances VBG ILtp7Tmb
RON On-state resistance 9 to 35 V 5 A 300 µs 25˚C - 15 20 mΩ
150˚C - - 37 mΩ
RON On-state resistance 6 V 5 A 300 µs 25˚C - 18 25 mΩ
150˚C - - 45 mΩ
RGInternal ground resistance IG = 10 mA 95 150 190 Ω
1 For a high side switch, the load pin voltage goes negative with respect to ground during the turn-off of an inductive load.
2 On-state resistance is increased if the supply voltage is less than 9 V. Refer to figure 8.
3 This is the continuous current drawn from the supply when the input is low and includes leakage current to the load.
4 The measured current is in the load pin only.
5 This is the continuous current drawn from the supply with no load connected, but with the input high.
6 Defined as in ISO 10483-1. Because of current limiting, this parameter is not applicable.
7 The supply and input voltage for the RON tests are continuous. The specified pulse duration tp refers only to the applied load current.
March 2002 3 Rev 1.200