Philips Semiconductors Product specification
SA70161.3GHz low voltage fractional-N synthesizer
1999 Nov 04 4
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER MIN. MAX. UNIT
VDD Digital supply voltage –0.3 +5.5 V
VDDCP Analog supply voltage –0.3 +5.5 V
∆VDDCP–VDD Difference in voltage between VDDCP and VDD (VDDCP ≥ VDD) –0.3 +2.8 V
VnVoltage at pins 1, 2, 5, 6, 11 to 16 –0.3 VDD + 0.3 V
V1Voltage at pin 8, 9 –0.3 VDDCP+ 0.3 V
∆VGND Difference in voltage between GNDCP and GND (these pins should
be connected together) –0.3 +0.3 V
Tstg Storage temperature –55 +125 _C
Tamb Operating ambient temperature –40 +85 _C
TjMaximum junction temperature 150 _C
Handling
Inputs and outputs are protected against electrostatic discharge in
normal handling. However, to be totally safe, it is desirable to take
normal precautions appropriate to handling MOS devices.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
Rth j–a Thermal resistance from junction to ambient in free air 120 K/W