TPS56xx Functions
2-8
Figure 1–3). This arrangement improves efficiency over solutions having a
separate current sensing resistor. The drain of the high-side MOSFET is
connected to HISENSE (pin 19). The source of the high-side MOSFET is
connected to LOSENSE (pin 20). When the high-side MOSFET is on, a
TPS56xx internal switch is also on and samples the source voltage of the
high-side MOSFET. This sampled voltage is applied to IOUTLO (pin 21) and
is held by the external 0.1-µF capacitor, C6, which is connected from IOUTLO
(pin 21) to HISENSE (pin 19). The TPS56xx amplifies (gain=2) the
sampled-and-held voltage on C6 and sends the output voltage to IOUT (pin
1).
Figure 2–3. VDS
Sensing CircuitAdaptive
Deadtime
Control
HIGHDR
C1
L1
Vin
L2
C2
LOSENSE
LOWIN
Vphase
VO
TPS56xx Synchronous-Buck Controller
C3
R2
VSENSE R1
+
–
IOUT
Rising
Edge
Delay
Vref
LOWDR
HIGHIN
Shutdown
IOUTLOHISENSE
Cs/h
Gain of 2
Vds Sensing Circuit
Figure 2–3 gives a simple block diagram of the Vds sensing circuit. The Vds
sensing circuit measures the average voltage across the high-side MOSFET
when the high-side MOSFET is on, and holds that value on a sample/hold
capacitor when the high-side MOSFET is off. The voltage on the sample/hold
capacitor is directly proportional to the load current. Sensing across the
high-side MOSFET rather than the low-side MOSFET ensures that shorted
loads can be detected. The RC time constant of the sample/hold network must
be greater than the conduction-time of the high-side MOSFET, otherwise the
sample/hold circuit will function as a peak detector circuit and will not hold the
average Vds voltage. The differential voltage across the sample/hold
capacitor is amplified by 2 and converted to a single-ended signal on the IOUT
pin. The DC CMRR of the Vds sensing amplifier is 69 dB minimum. Added logic
ensures that sampling begins and ends while the high-side MOSFET is
conducting. The turn-on and turn-off delays of the sample/hold switch are less
than 100 ns. Additional logic and a rising edge delay circuit are included to
guarantee sampling during a short-to-ground fault across the low-side
MOSFET; the rising edge delay time is 500 ns.
Resistors R7 and R13 in Figure 1–3 set the current limit setpoint. This
resistor-divider network applies the IOUT output voltage to OCP (pin 3). The