¡ Semiconductor |
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| MSM80C154S/83C154S | ||
(3) External data memory access AC characteristics |
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| VCC=2.2 to 6.0V, VSS=0V, | ||||
PORT 0, ALE, and PSEN connected with 100pF load, other connected with 80pF load | |||||||
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| Variable clock from*1 |
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Parameter | Symbol |
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| 1 to 24 MHz |
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| Min. |
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| Max. |
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XTAL1, XTAL2 Oscillator Cycle | tCLCL |
| 41.7 |
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| 1000 | ns |
ALE Signal Width | tLHLL |
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| — | ns | |
Address Setup Time | tAVLL |
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| — | ns | |
(to ALE Falling Edge) |
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Address Hold Time | tLLAX |
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| — | ns | |
(from ALE Falling Edge) |
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RD Signal Width | tRLRL |
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| — | ns | |
WR Signal Width | tWLWH |
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| — | ns | |
RAM Data Read Time | tRLDV |
| — |
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| ns | |
(from RD Signal Falling Edge) |
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RAM Data Read Hold Time | tRHDX |
| 0 |
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| — | ns |
(from RD Signal Rising Edge) |
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Data Bus Floating Time | tRHDZ |
| — |
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| ns | |
(from RD Signal Rising Edge) |
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RAM Data Read Time | tLLDV |
| — |
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| ns | |
(from ALE Signal Falling Edge) |
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RAM Data Read Time | tAVDV |
| — |
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| ns | |
(from Address Output) |
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RD/WR Output Time from ALE | tLLWL |
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| 3tCLCL+40 | ns | |
Falling Edge | *2 |
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RD/WR Output Time from Address | tAVWL |
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| — | ns | |
Output |
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WR Output Time from Data Output | tQVWX |
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| — | ns | |
Time from Data to WR Rising Edge | tQVWH |
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| — | ns | |
Data Hold Time | tWHQX |
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| — | ns | |
(from WR Rising Edge) |
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Time from to Address Float RD | tRLAZ |
| 0 |
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| — | ns |
Output |
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Time from RD/WR Rising Edge to | tWHLH |
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| 1tCLCL+40 | ns | |
ALE Rising Edge |
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| *2 | 1tCLCL+100 | |||
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*1 The variable check is from 0 to 24 MHz when the external check is used. *2 For 2.2£VCC<4 V
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