SLUU195 − June 2004
9 List of Materials
The following table lists the TPS40090EVM−002 components corresponding to the schematic shown in Figure 1.
Table 2. List of Materials
Reference | QTY | Description | Size | Manufacturer | Part Number | |
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C1, C4 | 2 | Capacitor, OS−CON, 68 ∝F, 20 V, 40 mΩ, 20% | 10.3mm (F8) | Sanyo | 20SVP68M | |
C2, C5, C7, |
| Capacitor, ceramic, 1000−pF, 25 V, X7R, ±5% |
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C8,C9, C10, | 7 | 603 | muRata | GRM39SL102J25 | ||
C11 |
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C3,C17, C18, | 5 | Capacitor, dielectric, 1.0 ∝F, 16 V, X7R, ±10% | 805 | muRata | GRM40B105K16 | |
C19, C21 | ||||||
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C6 | 0 |
| 603 | Std | Std | |
C12 | 1 | Capacitor, ceramic, 0.01 ∝F, 50 V, X7R, ±5% | 805 | muRata | GRM40UJ103J50 | |
C13, C14, C15, | 6 | Capacitor, dielectric, 4.7 ∝F, 16 V, X5R, ±10% | 1206 | muRata | GRM42− | |
C16, C20, C22 | 65X5R475K16 | |||||
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C30, C31, C32, |
| Capacitor, dielectric, 10 ∝F, 25 V, X5R |
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C33, C34, C35, | 8 | 1210 | TDK | C3225X5R1E106M | ||
C36, C37 |
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C38, C39, C40, | 4 | Capacitor, ceramic, 1000−pF, 50 V, X7R, ±5% | 805 | muRata | GRM40TH102J50 | |
C41 | ||||||
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C42, C43, C44, | 4 | Capacitor, ceramic, 0.01 ∝F, 50 V, COG | 805 | TDK | C2012COG1H103JT | |
C45 | ||||||
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C23, C24, C25, |
| Capacitor, POSCAP, 220 ∝F, 2.5 V, 15 mΩ, 20% |
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C26,C46, | 8 | 7343 (D) | Sanyo | 2R5TPE220M | ||
C47,C50, C51 |
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C48, C49, C52, | 4 | Capacitor, Ceramic, 10 ∝F, 6.3 V, X5R | 1206 | TDK | C3216X5R0J106M | |
C53 | ||||||
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D1, D2, D3, D4, | 5 | Diode, dual schottky, 200 mA, 30 V | Vishay−Liteon | BAT54C | ||
D6 | ||||||
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D7, D8, D9, | 4 | Diode, zener, 6.2 V, 350 mW | SOT−23 | Diodes, Inc. | BZX84C6V2 | |
D10 | ||||||
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J1, J2, J9, J10 | 1 | Lug, Solderless, #2 − #8 AWG, 1/4 | Copper | 524600 | ILSCO | |
J4, J5, J6, J7, | 5 | Connector, shielded, test jack, vertical | 0.0125 DIA | Johnson | 129−0701−202 | |
J8 | Components | |||||
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L1, L2, L3, L4 | 4 | Inductor, SMT, 0.62 ∝H, 30 A, 1.75 mΩ | 0.524 x 0.492 | TDK | SPM12550−R62M300 | |
Q2, Q3, Q4, Q5 | 4 | MOSFET, | PWRPAK | Vishay−Siliconix | Si7860DP | |
S0−8 | ||||||
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Q6, Q7, Q8, Q9 | 0 | MOSFET, | PWRPAK | Vishay−Siliconix | Si7860DP | |
S0−8 | ||||||
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Q1, Q10, Q11, |
| MOSFET, | PWRPAK |
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Q12, Q13, Q14, | 8 | Vishay−Siliconix | Si7880DP | |||
S0−8 | ||||||
Q15, Q16 |
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R1 | 1 | Resistor, chip, 8.25 kΩ, 1/16−W, 1% | 603 | Std | Std | |
R2 | 1 | Resistor, chip, 6.19 kΩ,, 1/16−W, 1% | 603 | Std | Std | |
R3 | 0 |
| 603 | Std | Std | |
R4, R9, R11 | 3 | Resistor, chip, 10 kΩ, 1/16−W, 1% | 603 | Std | Std | |
R5 | 1 | Resistor, chip, 8.66 kΩ, 1/16−W, 1% | 603 | Std | Std | |
R6 | 1 | Resistor, chip, 49.9 Ω, 1/16−W, 1% | 603 | Std | Std | |
R7 | 1 | Resistor, chip, 40.2 kΩ, 1/16−W, 1% | 603 | Std | Std | |
R8, R16, R55, |
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R56, R59, R60, | 7 | Resistor, chip, 10−Ohms, 1/16−W, 1% | 603 | Std | Std | |
R61 |
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R10 | 1 | Resistor, chip, 475 kΩ, 1/16−W, 5% | 603 | Std | Std | |
R12 | 1 | Resistor, chip, 64.9 kΩ, 1/16−W, 1% | 603 | Std | Std |
24TPS40090