SLUU195 − June 2004
3.Transient consideration. An additional consideration in the selection of the output inductor and capacitance value can be derived from examining the transient voltage overshoot which can be initiated with a load step from full load to no load. By equating the inductive energy with the capacitive energy the equation (10) can be derived.
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| LEQ | I |
| 2 | * I | 2 |
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| 0.6mH |
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| 2 |
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| L | I2 |
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| OH |
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| OL |
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| (100 A) |
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| (10) | ||||
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| 4 |
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COUT + |
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| + |
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| + 1846 mF | |
| V2 |
| VOUT2 | 2 |
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| 2 |
| (1.75 V) | 2 |
| 2 | ||||||||
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| * VOUT1 |
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| * (1.5 V) |
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where
•IOH is full load
•IOL is no load
•VOUT2 is the the allowed transient voltage rise
•VOUT1 is the initial voltage
In this
4.5MOSFET Selection
There are different requirements for switching FET(s) and rectifier FET(s) in the
cycle. The conduction loss is dominant.
upsets the driver. Two Si7880DP from Siliconix are in parallel for the rectifier FET. The RDS(on) of this FET is 3 mΩ and Qgs=18nC, and Qgd=10.5nC.
The switching FET switches at high voltage and high current, the switching loss is dominant. One single Si7860DP is selected for its low total gate charge.
Both types of FET(s) are offered in the Powerpak SO−8 package.
The PCB is layed out for two FETs in parallel, for both switching FET(s) and rectifier FET(s), to give the feasibility to modify the board for different applications.
4.6Current Sensing
TPS40090 supports both resistor current sensing and DCR current sensing approach. DCRs of the output inductors are used in this design as the current sensing components. The DCR
current sensing circuit is shown in Figure 5. The idea is to parallel a
TPS40090 | 11 |