Cypress CY7C1006D, CY7C106D manual Features, Functional Description, Logic Block Diagram

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CY7C106D

CY7C1006D

1-Mbit (256K x 4) Static RAM

Features

•Pin- and function-compatible with CY7C106B/CY7C1006B

•High speed

—tAA = 10 ns

•Low active power

—ICC = 80 mA @ 10 ns

•Low CMOS standby power

—ISB2 = 3.0 mA

•2.0V Data Retention

•Automatic power-down when deselected

•CMOS for optimum speed/power

•TTL-compatible inputs and outputs

•CY7C106D available in Pb-free 28-pin 400-Mil wide Molded SOJ package. CY7C1006D available in Pb-free 28-pin 300-Mil wide Molded SOJ package

Functional Description [1]

The CY7C106D and CY7C1006D are high-performance CMOS static RAMs organized as 262,144 words by 4 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an active LOW Output Enable (OE), and tri-state drivers. These devices have an automatic power-down feature that reduces power consumption by more than 65% when the devices are deselected. The four input and output pins (IO0 through IO3) are placed in a high-impedance state when:

•Deselected (CE HIGH)

•Outputs are disabled (OE HIGH)

•When the write operation is active (CE and WE LOW)

Write to the device by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. Data on the four IO pins (IO0 through IO3) is then written into the location specified on the address pins (A0 through A17).

Read from the device by taking Chip Enable (CE) and Output Enable (OE) LOW while forcing Write Enable (WE) HIGH. Under these conditions, the contents of the memory location specified by the address pins appears on the four IO pins.

Logic Block Diagram

CE

WE

OE

 

 

INPUT BUFFER

 

 

A1

 

 

 

 

 

 

 

 

 

 

A2

DECODERROW

 

 

 

 

 

 

 

 

SENSEAMPS

A8

 

 

 

 

 

 

 

 

A3

 

 

 

256K x 4

 

 

 

 

A4

 

 

 

 

 

 

 

A5

 

 

 

ARRAY

 

 

 

 

A6

 

 

 

 

 

 

 

A7

 

 

 

 

 

 

 

 

 

 

A9

 

 

 

 

 

 

 

 

 

 

 

COLUMN DECODER

POWER

 

 

 

 

 

 

 

 

 

 

DOWN

 

0

10

11

12

13

14

15

16

17

 

 

A A A

A

A A A

A A

 

IO0

IO1

IO2

IO3

Note

1. For guidelines on SRAM system design, please refer to the ‘System Design Guidelines’ Cypress application note, available on the internet at www.cypress.com.

Cypress Semiconductor Corporation

• 198 Champion Court • San Jose, CA 95134-1709

•

408-943-2600

Document #: 38-05459 Rev. *E

Revised February 22, 2007

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Contents Logic Block Diagram FeaturesFunctional Description Cypress Semiconductor CorporationSelection Guide Pin ConfigurationTop View CY7C106D-10 Unit CY7C1006D-10Maximum Ratings Electrical Characteristics Over the Operating RangeOperating Range Thermal Resistance CapacitanceAC Test Loads and Waveforms Parameter Description Test Conditions Max UnitMin Max Read Cycle Parameter DescriptionSwitching Waveforms Data Retention Characteristics Over the Operating RangeData Retention Waveform Parameter Description Conditions Min Max UnitWrite Cycle No WE Controlled, OE High During Write 18 Write Cycle No CE Controlled 18Truth Table Input/Output Mode PowerOrdering Information Pin 300-Mil Molded SOJ Package DiagramsPin 400-Mil Molded SOJ Document History Issue Date Orig. Description of Change

CY7C1006D, CY7C106D specifications

Cypress Semiconductor, a leader in providing advanced memory and storage solutions, offers a range of high-performance SRAM products. Among these, the CY7C106D and CY7C1006D stand out as robust choices for various applications that require speed and reliability.

The CY7C106D is a 1 Megabit static RAM organized as 128K words by 8 bits. This SRAM is known for its high-speed performance, operating at access times as low as 10 nanoseconds, which makes it suitable for applications where quick data retrieval is crucial. Additionally, it features a range of voltage options, operating efficiently at 2.7V to 5.5V, allowing for flexibility in system design.

On the other hand, the CY7C1006D is a 256-Kbit static RAM organized as 32K words by 8 bits. Similarly, it showcases access times of up to 10 nanoseconds, ensuring a fast read and write capability. Both devices support asynchronous operations, meaning they don’t require clock cycles, further enhancing their speed in operations crucial for real-time applications.

Both the CY7C106D and CY7C1006D utilize advanced CMOS technology, which not only contributes to their low power consumption but also increases reliability and performance in data retention. The low standby power makes these SRAMs ideal for handheld and battery-operated devices, where power efficiency is paramount.

Another significant feature of these SRAM devices is their simple interfacing capabilities. They can be easily integrated into various electronic systems, whether in embedded systems, communications, networking, or industrial applications. Their straightforward pin configurations enable rapid design and implementation into existing system architectures.

In terms of reliability, Cypress SRAMs are consistent across temperature ranges, ensuring that the performance remains stable even in challenging operating conditions. With endurance ratings favoring frequent read/write cycles, they are well-suited for high-demand applications such as caching and buffering.

In summary, the CY7C106D and CY7C1006D SRAMs from Cypress represent a compelling combination of speed, flexibility, and low power consumption. Their advanced characteristics and technologies make them ideal for a wide array of applications, meeting the high-performance requirements of modern electronic systems while ensuring durability and ease of integration. These SRAMs are a solid choice for designers looking to enhance the reliability and efficiency of their memory solutions.
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