Cypress CY7C106D, CY7C1006D Capacitance, Thermal Resistance, AC Test Loads and Waveforms, 30 pF

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CY7C106D

 

 

 

 

 

 

CY7C1006D

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Capacitance [4]

 

 

 

 

 

 

 

Parameter

Description

Test Conditions

Max

 

 

Unit

CIN: Addresses

Input Capacitance

TA = 25°C, f = 1 MHz, VCC = 5.0V

7

 

 

 

pF

CIN: Controls

 

 

 

 

10

 

 

 

pF

COUT

Output Capacitance

 

10

 

 

 

pF

Thermal Resistance [4]

 

 

 

 

 

 

 

Parameter

Description

Test Conditions

300-Mil

400-Mil

 

 

Unit

Wide SOJ

Wide SOJ

 

 

 

 

 

 

 

 

ΘJA

Thermal Resistance

Still Air, soldered on a 3 × 4.5 inch,

59.16

58.76

 

 

°C/W

 

(Junction to Ambient)

four-layer printed circuit board

 

 

 

 

 

 

ΘJC

Thermal Resistance

 

40.84

40.54

 

 

°C/W

 

(Junction to Case)

 

 

 

 

 

 

 

AC Test Loads and Waveforms [5]

3.0V

Z = 50

 

OUTPUT

* CAPACITIVE LOAD CONSISTS

50

 

 

 

 

 

 

 

30 pF*

GND

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1.5V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

OF ALL COMPONENTS OF THE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

TEST ENVIRONMENT

 

 

 

 

 

 

 

 

 

Rise Time: 3 ns

(a)

 

 

 

 

ALL INPUT PULSES

 

 

90%

 

 

90%

 

 

 

 

 

 

 

 

10%

 

10%

 

 

(b)Fall Time: 3 ns

High-Z characteristics:

R1 480

5V

OUTPUT

 

5 pF

 

 

 

 

 

 

 

 

 

 

 

 

R2

 

 

 

 

 

INCLUDING

 

 

 

 

 

 

 

 

 

 

 

 

255

 

 

 

 

 

 

 

 

 

 

 

 

 

 

JIG AND

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

SCOPE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(c)

Notes

4.Tested initially and after any design or process changes that may affect these parameters.

5.AC characteristics (except High-Z) are tested using the load conditions shown in Figure (a). High-Z characteristics are tested for all speeds using the test load shown in Figure (c).

Document #: 38-05459 Rev. *E

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Contents Features Logic Block DiagramFunctional Description Cypress Semiconductor CorporationPin Configuration Selection GuideTop View CY7C106D-10 Unit CY7C1006D-10Maximum Ratings Electrical Characteristics Over the Operating RangeOperating Range Capacitance Thermal ResistanceAC Test Loads and Waveforms Parameter Description Test Conditions Max UnitParameter Description Min Max Read CycleData Retention Characteristics Over the Operating Range Switching WaveformsData Retention Waveform Parameter Description Conditions Min Max UnitWrite Cycle No CE Controlled 18 Write Cycle No WE Controlled, OE High During Write 18Truth Table Input/Output Mode PowerOrdering Information Package Diagrams Pin 300-Mil Molded SOJPin 400-Mil Molded SOJ Issue Date Orig. Description of Change Document History

CY7C1006D, CY7C106D specifications

Cypress Semiconductor, a leader in providing advanced memory and storage solutions, offers a range of high-performance SRAM products. Among these, the CY7C106D and CY7C1006D stand out as robust choices for various applications that require speed and reliability.

The CY7C106D is a 1 Megabit static RAM organized as 128K words by 8 bits. This SRAM is known for its high-speed performance, operating at access times as low as 10 nanoseconds, which makes it suitable for applications where quick data retrieval is crucial. Additionally, it features a range of voltage options, operating efficiently at 2.7V to 5.5V, allowing for flexibility in system design.

On the other hand, the CY7C1006D is a 256-Kbit static RAM organized as 32K words by 8 bits. Similarly, it showcases access times of up to 10 nanoseconds, ensuring a fast read and write capability. Both devices support asynchronous operations, meaning they don’t require clock cycles, further enhancing their speed in operations crucial for real-time applications.

Both the CY7C106D and CY7C1006D utilize advanced CMOS technology, which not only contributes to their low power consumption but also increases reliability and performance in data retention. The low standby power makes these SRAMs ideal for handheld and battery-operated devices, where power efficiency is paramount.

Another significant feature of these SRAM devices is their simple interfacing capabilities. They can be easily integrated into various electronic systems, whether in embedded systems, communications, networking, or industrial applications. Their straightforward pin configurations enable rapid design and implementation into existing system architectures.

In terms of reliability, Cypress SRAMs are consistent across temperature ranges, ensuring that the performance remains stable even in challenging operating conditions. With endurance ratings favoring frequent read/write cycles, they are well-suited for high-demand applications such as caching and buffering.

In summary, the CY7C106D and CY7C1006D SRAMs from Cypress represent a compelling combination of speed, flexibility, and low power consumption. Their advanced characteristics and technologies make them ideal for a wide array of applications, meeting the high-performance requirements of modern electronic systems while ensuring durability and ease of integration. These SRAMs are a solid choice for designers looking to enhance the reliability and efficiency of their memory solutions.