Cypress CY7C1006D, CY7C106D manual Document History, Issue Date Orig. Description of Change

Page 11

CY7C106D

CY7C1006D

Document History Page

Document Title: CY7C106D/CY7C1006D, 1-Mbit (256K x 4) Static RAM

Document Number: 38-05459

REV.

ECN NO.

Issue Date

Orig. of

Description of Change

Change

 

 

 

 

 

 

 

 

 

**

201560

See ECN

SWI

Advance information data sheet for C9 IPP

 

 

 

 

 

*A

233693

See ECN

RKF

ICC,ISB1,ISB2 Specs are modified as per EROS (Spec # 01-2165)

 

 

 

 

Pb-free offering in the ‘ordering information’

*B

262950

See ECN

RKF

Added Tpower Spec in Switching Characteristics table

 

 

 

 

Shaded ‘Ordering Information’

*C

See ECN

See ECN

RKF

Reduced Speed bins to -10 and -12 ns

 

 

 

 

 

*D

560995

See ECN

VKN

Converted from Preliminary to Final

 

 

 

 

Removed Commercial Operating range

 

 

 

 

Removed 12 ns speed bin

 

 

 

 

Added ICC values for the frequencies 83MHz, 66MHz and 40MHz

 

 

 

 

Updated Thermal Resistance table

 

 

 

 

Updated Ordering Information table

 

 

 

 

Changed Overshoot spec from VCC+2V to VCC+1V in footnote #3

*E

802877

See ECN

VKN

Changed ICC spec from 60 mA to 80 mA for 100MHz, 55 mA to 72 mA for

 

 

 

 

83MHz, 45 mA to 58 mA for 66MHz, 30 mA to 37 mA for 40MHz

Document #: 38-05459 Rev. *E

Page 11 of 11

[+] Feedback

Image 11
Contents Cypress Semiconductor Corporation FeaturesLogic Block Diagram Functional DescriptionCY7C106D-10 Unit CY7C1006D-10 Pin ConfigurationSelection Guide Top ViewOperating Range Electrical Characteristics Over the Operating RangeMaximum Ratings Parameter Description Test Conditions Max Unit CapacitanceThermal Resistance AC Test Loads and WaveformsMin Max Read Cycle Parameter DescriptionParameter Description Conditions Min Max Unit Data Retention Characteristics Over the Operating RangeSwitching Waveforms Data Retention WaveformWrite Cycle No WE Controlled, OE High During Write 18 Write Cycle No CE Controlled 18Ordering Information Input/Output Mode PowerTruth Table Pin 300-Mil Molded SOJ Package DiagramsPin 400-Mil Molded SOJ Document History Issue Date Orig. Description of Change

CY7C1006D, CY7C106D specifications

Cypress Semiconductor, a leader in providing advanced memory and storage solutions, offers a range of high-performance SRAM products. Among these, the CY7C106D and CY7C1006D stand out as robust choices for various applications that require speed and reliability.

The CY7C106D is a 1 Megabit static RAM organized as 128K words by 8 bits. This SRAM is known for its high-speed performance, operating at access times as low as 10 nanoseconds, which makes it suitable for applications where quick data retrieval is crucial. Additionally, it features a range of voltage options, operating efficiently at 2.7V to 5.5V, allowing for flexibility in system design.

On the other hand, the CY7C1006D is a 256-Kbit static RAM organized as 32K words by 8 bits. Similarly, it showcases access times of up to 10 nanoseconds, ensuring a fast read and write capability. Both devices support asynchronous operations, meaning they don’t require clock cycles, further enhancing their speed in operations crucial for real-time applications.

Both the CY7C106D and CY7C1006D utilize advanced CMOS technology, which not only contributes to their low power consumption but also increases reliability and performance in data retention. The low standby power makes these SRAMs ideal for handheld and battery-operated devices, where power efficiency is paramount.

Another significant feature of these SRAM devices is their simple interfacing capabilities. They can be easily integrated into various electronic systems, whether in embedded systems, communications, networking, or industrial applications. Their straightforward pin configurations enable rapid design and implementation into existing system architectures.

In terms of reliability, Cypress SRAMs are consistent across temperature ranges, ensuring that the performance remains stable even in challenging operating conditions. With endurance ratings favoring frequent read/write cycles, they are well-suited for high-demand applications such as caching and buffering.

In summary, the CY7C106D and CY7C1006D SRAMs from Cypress represent a compelling combination of speed, flexibility, and low power consumption. Their advanced characteristics and technologies make them ideal for a wide array of applications, meeting the high-performance requirements of modern electronic systems while ensuring durability and ease of integration. These SRAMs are a solid choice for designers looking to enhance the reliability and efficiency of their memory solutions.