Cypress CY7C1006D, CY7C106D Maximum Ratings, Electrical Characteristics Over the Operating Range

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CY7C106D

CY7C1006D

Maximum Ratings

Exceeding the maximum ratings may impair the useful life of the device. These user guidelines are not tested.

Storage Temperature

–65°C to +150°C

Ambient Temperature with

 

Power Applied

–55°C to +125°C

Supply Voltage on VCC Relative to GND [3] ... –0.5V to +6.0V

DC Voltage Applied to Outputs

 

in High-Z State [3]

–0.5V to V + 0.5V

 

CC

Electrical Characteristics (Over the Operating Range)

DC Input Voltage [3]

–0.5V to V + 0.5V

 

CC

Current into Outputs (LOW)

20 mA

Static Discharge Voltage

> 2001V

(per MIL-STD-883, Method 3015)

 

Latch-up Current

> 200 mA

Operating Range

Range

Ambient

VCC

Speed

Temperature

Industrial

–40°C to +85°C

5V ± 0.5V

10 ns

 

 

 

 

 

 

 

 

 

 

7C106D-10

 

Parameter

Description

 

Test Conditions

 

7C1006D-10

Unit

 

 

 

 

 

 

 

 

 

 

Min

Max

 

 

 

 

 

 

 

 

VOH

Output HIGH Voltage

IOH = –4.0 mA

 

2.4

 

V

VOL

Output LOW Voltage

IOL = 8.0 mA

 

 

0.4

V

VIH

Input HIGH Voltage

 

 

 

 

2.2

VCC + 0.5

V

VIL

Input LOW Voltage [3]

 

 

 

 

–0.5

0.8

V

IIX

Input Leakage Current

GND < VI < VCC

 

–1

+1

A

IOZ

Output Leakage Current

GND < VI < VCC, Output Disabled

–1

+1

A

ICC

VCC Operating Supply Current

VCC = Max,

100 MHz

 

80

mA

 

 

IOUT = 0 mA,

 

 

 

 

 

 

83 MHz

 

72

mA

 

 

f = fmax = 1/tRC

 

 

 

 

 

 

 

 

 

 

 

 

66 MHz

 

58

mA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

40 MHz

 

37

mA

 

 

 

 

 

 

 

 

 

ISB1

Automatic CE Power-Down

Max VCC,

 

> VIH,

 

 

10

mA

CE

 

 

 

Current—TTL Inputs

VIN > VIH or VIN < VIL, f = fmax

 

 

 

 

ISB2

Automatic CE Power-Down

Max VCC,

 

> VCC – 0.3V,

 

 

3

mA

CE

 

 

 

Current—CMOS Inputs

VIN > VCC – 0.3V or VIN < 0.3V, f=0

 

 

 

Note

3. VIL (min) = –2.0V and VIH(max) = VCC + 1V for pulse durations of less than 5 ns.

Document #: 38-05459 Rev. *E

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Contents Cypress Semiconductor Corporation FeaturesLogic Block Diagram Functional DescriptionCY7C106D-10 Unit CY7C1006D-10 Pin ConfigurationSelection Guide Top ViewElectrical Characteristics Over the Operating Range Maximum RatingsOperating Range Parameter Description Test Conditions Max Unit CapacitanceThermal Resistance AC Test Loads and WaveformsMin Max Read Cycle Parameter DescriptionParameter Description Conditions Min Max Unit Data Retention Characteristics Over the Operating RangeSwitching Waveforms Data Retention WaveformWrite Cycle No WE Controlled, OE High During Write 18 Write Cycle No CE Controlled 18Input/Output Mode Power Truth TableOrdering Information Pin 300-Mil Molded SOJ Package DiagramsPin 400-Mil Molded SOJ Document History Issue Date Orig. Description of Change

CY7C1006D, CY7C106D specifications

Cypress Semiconductor, a leader in providing advanced memory and storage solutions, offers a range of high-performance SRAM products. Among these, the CY7C106D and CY7C1006D stand out as robust choices for various applications that require speed and reliability.

The CY7C106D is a 1 Megabit static RAM organized as 128K words by 8 bits. This SRAM is known for its high-speed performance, operating at access times as low as 10 nanoseconds, which makes it suitable for applications where quick data retrieval is crucial. Additionally, it features a range of voltage options, operating efficiently at 2.7V to 5.5V, allowing for flexibility in system design.

On the other hand, the CY7C1006D is a 256-Kbit static RAM organized as 32K words by 8 bits. Similarly, it showcases access times of up to 10 nanoseconds, ensuring a fast read and write capability. Both devices support asynchronous operations, meaning they don’t require clock cycles, further enhancing their speed in operations crucial for real-time applications.

Both the CY7C106D and CY7C1006D utilize advanced CMOS technology, which not only contributes to their low power consumption but also increases reliability and performance in data retention. The low standby power makes these SRAMs ideal for handheld and battery-operated devices, where power efficiency is paramount.

Another significant feature of these SRAM devices is their simple interfacing capabilities. They can be easily integrated into various electronic systems, whether in embedded systems, communications, networking, or industrial applications. Their straightforward pin configurations enable rapid design and implementation into existing system architectures.

In terms of reliability, Cypress SRAMs are consistent across temperature ranges, ensuring that the performance remains stable even in challenging operating conditions. With endurance ratings favoring frequent read/write cycles, they are well-suited for high-demand applications such as caching and buffering.

In summary, the CY7C106D and CY7C1006D SRAMs from Cypress represent a compelling combination of speed, flexibility, and low power consumption. Their advanced characteristics and technologies make them ideal for a wide array of applications, meeting the high-performance requirements of modern electronic systems while ensuring durability and ease of integration. These SRAMs are a solid choice for designers looking to enhance the reliability and efficiency of their memory solutions.