CY7C1460AV33

CY7C1462AV33

CY7C1464AV33

3.3V TAP AC Test Conditions

Input pulse levels

VSS to 3.3V

Input rise and fall times

1 ns

Input timing reference levels

1.5V

Output reference levels

1.5V

Test load termination supply voltage

1.5V

2.5V TAP AC Test Conditions

Input pulse levels

VSS to 2.5V

Input rise and fall time

1 ns

Input timing reference levels

1.25V

Output reference levels

1.25V

Test load termination supply voltage

1.25V

3.3V TAP AC Output Load Equivalent

 

2.5V TAP AC Output Load Equivalent

 

 

 

 

 

 

 

 

 

1.5V

 

 

 

 

 

 

 

 

 

 

 

 

 

1.25V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

50

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

50

 

TDO

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

TDO

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ZO= 50

 

 

 

 

 

 

 

20pF

 

 

 

 

 

 

ZO= 50

 

 

 

 

 

 

 

20pF

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

TAP DC Electrical Characteristics And Operating Conditions

 

 

 

 

 

 

 

 

 

 

 

 

 

(0°C < TA < +70°C; V = 3.135V to 3.6V unless otherwise noted)[11]

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

DD

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Parameter

 

 

Description

 

 

 

Test Conditions

 

Min.

 

 

 

 

Max.

 

Unit

VOH1

 

 

Output HIGH Voltage

 

IOH = –4.0 mA, VDDQ = 3.3V

 

 

 

 

 

2.4

 

 

 

 

 

 

 

 

 

 

 

V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IOH = –1.0 mA, VDDQ = 2.5V

 

 

 

 

 

2.0

 

 

 

 

 

 

 

 

 

 

 

V

VOH2

 

 

Output HIGH Voltage

 

IOH = –100 µA

VDDQ = 3.3V

 

2.9

 

 

 

 

 

 

 

 

 

 

 

V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VDDQ = 2.5V

 

2.1

 

 

 

 

 

 

 

 

 

 

 

V

VOL1

 

 

Output LOW Voltage

 

IOL = 8.0 mA

 

VDDQ = 3.3V

 

 

 

 

0.4

 

V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IOL = 1.0 mA

 

VDDQ = 2.5V

 

 

 

 

0.4

 

V

VOL2

 

 

Output LOW Voltage

 

IOL = 100 µA

 

VDDQ = 3.3V

 

 

 

 

0.2

 

V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VDDQ = 2.5V

 

 

 

 

0.2

 

V

VIH

 

 

Input HIGH Voltage

 

 

 

 

VDDQ = 3.3V

 

2.0

 

 

VDD + 0.3

 

V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VDDQ = 2.5V

 

1.7

 

 

VDD + 0.3

 

V

VIL

 

 

Input LOW Voltage

 

 

 

 

VDDQ = 3.3V

 

–0.3

0.8

 

V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VDDQ = 2.5V

 

–0.3

0.7

 

V

IX

 

 

Input Load Current

 

GND < VIN < VDDQ

 

 

 

 

 

 

–5

5

 

µA

Identification Register Definitions

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Instruction Field

CY7C1460AV33

CY7C1462AV33

CY7C1464AV33

 

 

 

Description

 

 

 

 

 

 

 

(1M ×36)

 

(2M ×18)

 

(512K ×72)

 

 

 

 

Revision Number (31:29)

 

 

 

 

 

 

 

 

000

 

000

 

000

 

 

 

Describes the version number.

 

 

 

 

 

 

 

 

 

Device Depth (28:24)[12]

01011

 

01011

 

01011

 

Reserved for Internal Use

 

Architecture/Memory Type(23:18)

001000

 

001000

 

001000

 

Defines memory type and archi-

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tecture

 

 

 

 

 

 

 

 

 

 

Bus Width/Density(17:12)

100111

 

010111

 

110111

 

Defines width and density

 

 

 

 

 

 

 

Cypress JEDEC ID Code (11:1)

00000110100

00000110100

00000110100

 

Allows unique identification of

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

SRAM vendor.

 

ID Register Presence Indicator (0)

 

 

 

 

 

 

 

 

1

 

1

 

1

 

 

 

Indicates the presence of an ID

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

register.

 

 

 

 

 

 

 

 

 

 

Notes:

11.All voltages referenced to VSS (GND).

12.Bit #24 is “1” in the ID Register Definitions for both 2.5V and 3.3V versions of this device.

Document #: 38-05353 Rev. *D

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Cypress CY7C1464AV33 manual 3V TAP AC Test Conditions, 5V TAP AC Test Conditions, Identification Register Definitions

CY7C1462AV33, CY7C1464AV33, CY7C1460AV33 specifications

The Cypress CY7C1460AV33, CY7C1464AV33, and CY7C1462AV33 are high-performance, low-power asynchronous SRAM devices that find wide applications in various electronic systems, encompassing telecommunications, computing, and consumer electronics. These SRAM products are particularly popular for their speed, efficiency, and versatility in a range of data processing applications.

A key feature of the CY7C1460AV33 is its 64K x 16 memory architecture, while the CY7C1464AV33 offers a 256K x 16 configuration, and the CY7C1462AV33 provides a 128K x 16 setup. This allows designers to tailor their memory requirements based on the specific demands of their applications, promoting system optimization and enhancing performance.

One of the standout characteristics of these SRAM devices is their high-speed operation. With access times as low as 10 nanoseconds, they are capable of supporting demanding applications that necessitate rapid data retrieval and storage. This performance is complemented by a low cycle time, which contributes to faster data rates, enabling seamless data flow and efficient processing capabilities.

Low power consumption is another defining feature of the CY7C1460AV33, CY7C1464AV33, and CY7C1462AV33. These devices utilize advanced CMOS technology, ensuring minimal energy usage without sacrificing performance. This is particularly advantageous for battery-operated devices and applications where energy efficiency is critical.

The SRAM devices also boast robust reliability and environmental tolerance. They are designed to operate over a wide temperature range, making them suitable for various operating conditions. Additionally, the use of advanced process technology ensures data integrity and durability, allowing them to survive in harsh environments.

Furthermore, the devices support a simple interfacing design, enabling easy integration into existing systems. They feature dual-chip select and byte write functionality, which enhances flexibility in memory handling, providing the capability to manage data more effectively.

In summary, the Cypress CY7C1460AV33, CY7C1464AV33, and CY7C1462AV33 offer high-speed, low-power, and highly reliable SRAM solutions suitable for various applications. With their advanced technology and robust characteristics, these devices are invaluable in modern electronic design, enabling innovation and performance optimization across diverse fields.