Cypress CY7C1324H manual Document History, REV ECN no, Issue Date Orig. Description of Change

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CY7C1324H

Document History Page

Document Title: CY7C1324H 2-Mbit (128K x 18) Flow-Through Sync SRAM

Document Number: 001-00208

REV.

ECN NO.

Issue Date

Orig. of

Description of Change

Change

 

 

 

 

 

**

347377

See ECN

PCI

New Data Sheet

 

 

 

 

 

*A

428408

See ECN

NXR

Converted from Preliminary to Final.

 

 

 

 

Changed address of Cypress Semiconductor Corporation on Page# 1 from

 

 

 

 

“3901 North First Street” to “198 Champion Court”

 

 

 

 

Removed 100 MHz Speed-bin

 

 

 

 

Changed Three-State to Tri-State.

 

 

 

 

Modified “Input Load” to “Input Leakage Current except ZZ and MODE” in the

 

 

 

 

Electrical Characteristics Table.

 

 

 

 

Modified test condition from VIH < VDD to VIH < VDD

 

 

 

 

Replaced Package Name column with Package Diagram in the Ordering

 

 

 

 

Information table.

 

 

 

 

Updated the Ordering Information Table.

 

 

 

 

Replaced Package Diagram of 51-85050 from *A to *B

*B

459347

See ECN

NXR

Included 2.5V I/O option

 

 

 

 

Updated the Ordering Information table.

Document #: 001-00208 Rev. *B

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Contents Cypress Semiconductor Corporation FeaturesLogic Block Diagram Functional Description1133 MHz Unit Pin ConfigurationsSelection Guide 15CY7C1324HPin Definitions Functional Overview Sleep ModeInterleaved Burst Address Table Mode = Floating or VDD Linear Burst Address Table Mode = GNDCycle Description Used ZZ Mode Electrical CharacteristicsParameter Description Test Conditions Min Max Unit AddressTruth Table for Read/Write 2 FunctionBWE Maximum Ratings Operating RangeAmbient Range Capacitance8 Thermal Resistance8AC Test Loads and Waveforms Switching Characteristics Over the Operating Range9 Read Cycle Timing15 Timing DiagramsDON’T Care Write Cycle Timing15Burst Read Read/Write Timing15, 17Adsp Adsc AddressZZ Mode Timing19 Package Diagram Ordering InformationPin Tqfp 14 x 20 x 1.4 mm Issue Date Orig. Description of Change Document HistoryREV ECN no

CY7C1324H specifications

The Cypress CY7C1324H is a high-performance SRAM (Static Random Access Memory) device that plays a crucial role in various applications requiring fast and efficient data access. This device is part of the CY7C family of SRAM products and stands out for its advanced features, robust performance metrics, and versatility in operation.

One of the most notable features of the CY7C1324H is its 32 megabit (4M x 8) memory capacity, which allows for significant data storage and retrieval capabilities. This memory is organized as a 4M word by 8 bits, making it suitable for a wide range of applications, from automotive to telecommunications and industrial control systems.

The CY7C1324H operates at a speed of 20 nanoseconds, making it an ideal choice for systems that require rapid read and write cycles. The device supports both asynchronous read and write operations, allowing for flexible interfacing with various microcontrollers and digital signal processors. This speed enhances overall system performance, especially when handling time-critical data.

In terms of technologies, the CY7C1324H employs high-speed CMOS (Complementary Metal-Oxide-Semiconductor) technology, which contributes to its low power consumption and high reliability. The device operates at a voltage range of 2.7V to 3.6V, making it suitable for battery-powered applications where energy efficiency is paramount. The integration of advanced CMOS technology also facilitates a higher degree of integration, enabling more compact designs in electronic circuits.

The device features a simple and straightforward interface, with a single enable (E) control pin that allows for easy access to memory contents. Additionally, the CY7C1324H supports both byte-wide and word-wide data accesses, making it highly adaptable for various application requirements.

Another important characteristic of the CY7C1324H is its low pin count, consisting of only 32 pins, which aids in minimizing board space and simplifying design layouts. The packaging comes in a 44-lead Thin Quad Flat Pack (TQFP), further optimizing space usage in compact electronic designs.

In summary, the Cypress CY7C1324H is a versatile, high-speed SRAM solution that offers a combination of large memory capacity, rapid access times, and low power operation. Its robust features make it an excellent choice for a broad spectrum of electronic applications, paving the way for enhanced performance and efficiency in modern electronic systems.
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