Cypress CY7C1324H manual Switching Characteristics Over the Operating Range9

Page 9

CY7C1324H

Switching Characteristics Over the Operating Range[9, 10]

 

 

 

 

 

 

 

 

 

 

 

 

 

 

-133

 

Parameter

 

 

 

 

 

 

 

 

 

 

 

Description

 

 

 

Unit

 

 

 

 

 

 

 

 

 

 

 

Min.

 

Max.

 

 

 

 

 

 

 

t

 

V (Typical) to the First Access[11]

1

 

 

ms

POWER

 

DD

 

 

 

 

Clock

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tCYC

 

Clock Cycle Time

7.5

 

 

ns

tCH

 

Clock HIGH

2.5

 

 

ns

tCL

 

Clock LOW

2.5

 

 

ns

Output Times

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tCDV

 

Data Output Valid after CLK Rise

 

 

6.5

ns

tDOH

 

Data Output Hold after CLK Rise

2.0

 

 

ns

tCLZ

 

Clock to Low-Z[12, 13, 14]

0

 

 

ns

tCHZ

 

Clock to High-Z[12, 13, 14]

 

 

3.5

ns

tOEV

 

 

 

LOW to Output Valid

 

 

3.5

ns

 

OE

 

 

tOELZ

 

 

 

LOW to Output Low-Z[12, 13, 14]

0

 

 

ns

 

OE

 

 

tOEHZ

 

 

 

HIGH to Output High-Z[12, 13, 14]

 

 

3.5

ns

 

OE

 

 

Set-up Times

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tAS

 

Address Set-up before CLK Rise

1.5

 

 

ns

tADS

 

 

 

 

 

 

 

 

 

 

Set-up before CLK Rise

1.5

 

 

ns

 

ADSP,

ADSC

 

 

tADVS

 

 

 

 

 

Set-up before CLK Rise

1.5

 

 

ns

 

ADV

 

 

tWES

 

 

 

 

 

 

 

 

 

 

[A:B] Set-up before CLK Rise

1.5

 

 

ns

GW,

BWE,

BW

 

 

tDS

 

Data Input Set-up before CLK Rise

1.5

 

 

ns

tCES

 

Chip Enable Set-up

1.5

 

 

ns

Hold Times

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tAH

 

Address Hold after CLK Rise

0.5

 

 

ns

tADH

 

 

 

 

 

 

 

 

 

 

Hold after CLK Rise

0.5

 

 

ns

ADSP,

ADSC

 

 

tWEH

 

 

 

 

 

 

 

 

 

 

[A:B] Hold after CLK Rise

0.5

 

 

ns

GW,

BWE,

BW

 

 

tADVH

 

 

 

 

Hold after CLK Rise

0.5

 

 

ns

ADV

 

 

tDH

 

Data Input Hold after CLK Rise

0.5

 

 

ns

tCEH

 

Chip Enable Hold after CLK Rise

0.5

 

 

ns

Notes:

9.Timing reference level is 1.5V when VDDQ = 3.3V and 1.25V when VDDQ = 2.5V

10. Test conditions shown in (a) of AC Test Loads unless otherwise noted.

11.This part has a voltage regulator internally; tPOWER is the time that the power needs to be supplied above VDD(minimum) initially before a Read or Write operation can be initiated.

12.tCHZ, tCLZ, tOELZ, and tOEHZ are specified with AC test conditions shown in part (b) of AC Test Loads. Transition is measured ± 200 mV from steady-state voltage.

13.At any given voltage and temperature, tOEHZ is less than tOELZ and tCHZ is less than tCLZ to eliminate bus contention between SRAMs when sharing the same data bus. These specifications do not imply a bus contention condition, but reflect parameters guaranteed over worst case user conditions. Device is designed to achieve High-Z prior to Low-Z under the same system conditions.

14.This parameter is sampled and not 100% tested.

Document #: 001-00208 Rev. *B

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Contents Logic Block Diagram FeaturesFunctional Description1 Cypress Semiconductor CorporationSelection Guide Pin Configurations15CY7C1324H 133 MHz UnitPin Definitions Interleaved Burst Address Table Mode = Floating or VDD Sleep ModeLinear Burst Address Table Mode = GND Functional OverviewParameter Description Test Conditions Min Max Unit ZZ Mode Electrical CharacteristicsAddress Cycle Description UsedTruth Table for Read/Write 2 FunctionBWE Maximum Ratings Operating RangeAmbient Range Capacitance8 Thermal Resistance8AC Test Loads and Waveforms Switching Characteristics Over the Operating Range9 Read Cycle Timing15 Timing DiagramsDON’T Care Write Cycle Timing15Adsp Adsc Read/Write Timing15, 17Address Burst ReadZZ Mode Timing19 Package Diagram Ordering InformationPin Tqfp 14 x 20 x 1.4 mm Issue Date Orig. Description of Change Document HistoryREV ECN no

CY7C1324H specifications

The Cypress CY7C1324H is a high-performance SRAM (Static Random Access Memory) device that plays a crucial role in various applications requiring fast and efficient data access. This device is part of the CY7C family of SRAM products and stands out for its advanced features, robust performance metrics, and versatility in operation.

One of the most notable features of the CY7C1324H is its 32 megabit (4M x 8) memory capacity, which allows for significant data storage and retrieval capabilities. This memory is organized as a 4M word by 8 bits, making it suitable for a wide range of applications, from automotive to telecommunications and industrial control systems.

The CY7C1324H operates at a speed of 20 nanoseconds, making it an ideal choice for systems that require rapid read and write cycles. The device supports both asynchronous read and write operations, allowing for flexible interfacing with various microcontrollers and digital signal processors. This speed enhances overall system performance, especially when handling time-critical data.

In terms of technologies, the CY7C1324H employs high-speed CMOS (Complementary Metal-Oxide-Semiconductor) technology, which contributes to its low power consumption and high reliability. The device operates at a voltage range of 2.7V to 3.6V, making it suitable for battery-powered applications where energy efficiency is paramount. The integration of advanced CMOS technology also facilitates a higher degree of integration, enabling more compact designs in electronic circuits.

The device features a simple and straightforward interface, with a single enable (E) control pin that allows for easy access to memory contents. Additionally, the CY7C1324H supports both byte-wide and word-wide data accesses, making it highly adaptable for various application requirements.

Another important characteristic of the CY7C1324H is its low pin count, consisting of only 32 pins, which aids in minimizing board space and simplifying design layouts. The packaging comes in a 44-lead Thin Quad Flat Pack (TQFP), further optimizing space usage in compact electronic designs.

In summary, the Cypress CY7C1324H is a versatile, high-speed SRAM solution that offers a combination of large memory capacity, rapid access times, and low power operation. Its robust features make it an excellent choice for a broad spectrum of electronic applications, paving the way for enhanced performance and efficiency in modern electronic systems.
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