Cypress CY7C1324H manual ZZ Mode Electrical Characteristics, Address, Cycle Description Used

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CY7C1324H

ZZ Mode Electrical Characteristics

Parameter

 

Description

 

 

 

 

 

 

Test Conditions

 

 

 

Min.

 

 

 

Max.

Unit

IDDZZ

Sleep mode standby current

 

 

 

 

ZZ > VDD – 0.2V

 

 

 

 

 

 

 

 

 

 

 

 

40

 

mA

tZZS

Device operation to ZZ

 

 

 

 

 

 

ZZ > VDD – 0.2V

 

 

 

 

 

 

 

 

 

 

 

 

 

2tCYC

ns

tZZREC

ZZ recovery time

 

 

 

 

 

 

ZZ < 0.2V

 

 

 

 

 

 

2tCYC

 

 

 

 

 

ns

tZZI

ZZ Active to sleep current

 

 

 

 

 

 

This parameter is sampled

 

 

 

 

 

 

 

 

 

2tCYC

ns

tRZZI

ZZ Inactive to exit sleep current

 

 

 

 

This parameter is sampled

 

0

 

 

 

 

 

 

 

ns

Truth Table[2, 3, 4, 5]

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ADDRESS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Cycle Description

Used

 

CE

1

CE2

 

CE

3

ZZ

 

 

ADSP

 

 

ADSC

 

 

ADV

 

 

WE

 

 

OE

 

CLK

 

DQ

Deselected Cycle,

None

 

H

X

 

X

L

 

 

X

 

L

 

X

 

 

X

 

X

 

L-H

 

Tri-State

Power-down

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Deselected Cycle,

None

 

L

L

 

X

L

 

 

L

 

X

 

X

 

 

X

 

X

 

L-H

 

Tri-State

Power-down

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Deselected Cycle,

None

 

L

X

 

H

L

 

 

L

 

X

 

X

 

 

X

 

X

 

L-H

 

Tri-State

Power-down

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Deselected Cycle,

None

 

L

L

 

X

L

 

 

H

 

L

 

X

 

 

X

 

X

 

L-H

 

Tri-State

Power-down

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Deselected Cycle,

None

 

X

X

 

X

L

 

 

H

 

L

 

X

 

 

X

 

X

 

L-H

 

Tri-State

Power-down

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Sleep Mode, Power-down

None

 

X

X

 

X

H

 

 

X

 

X

 

X

 

 

X

 

X

 

X

 

Tri-State

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Read Cycle, Begin Burst

External

 

L

H

 

L

L

 

 

L

 

X

 

X

 

 

X

 

L

 

L-H

 

Q

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Read Cycle, Begin Burst

External

 

L

H

 

L

L

 

 

L

 

X

 

X

 

 

X

 

H

 

L-H

 

Tri-State

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Write Cycle, Begin Burst

External

 

L

H

 

L

L

 

 

H

 

L

 

X

 

 

L

 

X

 

L-H

 

D

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Read Cycle, Begin Burst

External

 

L

H

 

L

L

 

 

H

 

L

 

X

 

 

H

 

L

 

L-H

 

Q

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Read Cycle, Begin Burst

External

 

L

H

 

L

L

 

 

H

 

L

 

X

 

 

H

 

H

 

L-H

 

Tri-State

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Read Cycle, Continue Burst

Next

 

X

X

 

X

L

 

 

H

 

H

 

L

 

 

H

 

L

 

L-H

 

Q

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Read Cycle, Continue Burst

Next

 

X

X

 

X

L

 

 

H

 

H

 

L

 

 

H

 

H

 

L-H

 

Tri-State

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Read Cycle, Continue Burst

Next

 

H

X

 

X

L

 

 

X

 

H

 

L

 

 

H

 

L

 

L-H

 

Q

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Read Cycle, Continue Burst

Next

 

H

X

 

X

L

 

 

X

 

H

 

L

 

 

H

 

H

 

L-H

 

Tri-State

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Write Cycle, Continue Burst

Next

 

X

X

 

X

L

 

 

H

 

H

 

L

 

 

L

 

X

 

L-H

 

D

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Write Cycle, Continue Burst

Next

 

H

X

 

X

L

 

 

X

 

H

 

L

 

 

L

 

X

 

L-H

 

D

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Read Cycle, Suspend Burst

Current

 

X

X

 

X

L

 

 

H

 

H

 

H

 

 

H

 

L

 

L-H

 

Q

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Read Cycle, Suspend Burst

Current

 

X

X

 

X

L

 

 

H

 

H

 

H

 

 

H

 

H

 

L-H

 

Tri-State

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Read Cycle, Suspend Burst

Current

 

H

X

 

X

L

 

 

X

 

H

 

H

 

 

H

 

L

 

L-H

 

Q

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Read Cycle, Suspend Burst

Current

 

H

X

 

X

L

 

 

X

 

H

 

H

 

 

H

 

H

 

L-H

 

Tri-State

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Write Cycle, Suspend Burst

Current

 

X

X

 

X

L

 

 

H

 

H

 

H

 

 

L

 

X

 

L-H

 

D

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Write Cycle, Suspend Burst

Current

 

H

X

 

X

L

 

 

X

 

H

 

H

 

 

L

 

X

 

L-H

 

D

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Notes:

2.X = “Don't Care.” H = Logic HIGH, L =Logic LOW.

3.WRITE = L when any one or more Byte Write Enable signals (BWA, BWB) and BWE = L or GW= L. WRITE = H when all Byte Write Enable signals (BWA, BWB), BWE, GW = H.The DQ pins are controlled by the current cycle and the OE signal. OE is asynchronous and is not sampled with the clock.

4.The SRAM always initiates a Read cycle when ADSP is asserted, regardless of the state of GW, BWE, or BW[A: B]. Writes may occur only on subsequent clocks after the ADSP or with the assertion of ADSC. As a result, OE must be driven HIGH prior to the start of the Write cycle to allow the outputs to tri-state. OE is a don't care for the remainder of the Write cycle

5.OE is asynchronous and is not sampled with the clock rise. It is masked internally during Write cycles. During a read cycle all data bits are Tri-State when OE is inactive or when the device is deselected, and all data bits behave as output when OE is active (LOW)

Document #: 001-00208 Rev. *B

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Contents Logic Block Diagram FeaturesFunctional Description1 Cypress Semiconductor CorporationSelection Guide Pin Configurations15CY7C1324H 133 MHz UnitPin Definitions Interleaved Burst Address Table Mode = Floating or VDD Sleep ModeLinear Burst Address Table Mode = GND Functional OverviewParameter Description Test Conditions Min Max Unit ZZ Mode Electrical CharacteristicsAddress Cycle Description UsedBWE Truth Table for Read/Write 2Function Ambient Range Maximum RatingsOperating Range AC Test Loads and Waveforms Capacitance8Thermal Resistance8 Switching Characteristics Over the Operating Range9 Read Cycle Timing15 Timing DiagramsDON’T Care Write Cycle Timing15Adsp Adsc Read/Write Timing15, 17Address Burst ReadZZ Mode Timing19 Pin Tqfp 14 x 20 x 1.4 mm Package DiagramOrdering Information REV ECN no Issue Date Orig. Description of ChangeDocument History

CY7C1324H specifications

The Cypress CY7C1324H is a high-performance SRAM (Static Random Access Memory) device that plays a crucial role in various applications requiring fast and efficient data access. This device is part of the CY7C family of SRAM products and stands out for its advanced features, robust performance metrics, and versatility in operation.

One of the most notable features of the CY7C1324H is its 32 megabit (4M x 8) memory capacity, which allows for significant data storage and retrieval capabilities. This memory is organized as a 4M word by 8 bits, making it suitable for a wide range of applications, from automotive to telecommunications and industrial control systems.

The CY7C1324H operates at a speed of 20 nanoseconds, making it an ideal choice for systems that require rapid read and write cycles. The device supports both asynchronous read and write operations, allowing for flexible interfacing with various microcontrollers and digital signal processors. This speed enhances overall system performance, especially when handling time-critical data.

In terms of technologies, the CY7C1324H employs high-speed CMOS (Complementary Metal-Oxide-Semiconductor) technology, which contributes to its low power consumption and high reliability. The device operates at a voltage range of 2.7V to 3.6V, making it suitable for battery-powered applications where energy efficiency is paramount. The integration of advanced CMOS technology also facilitates a higher degree of integration, enabling more compact designs in electronic circuits.

The device features a simple and straightforward interface, with a single enable (E) control pin that allows for easy access to memory contents. Additionally, the CY7C1324H supports both byte-wide and word-wide data accesses, making it highly adaptable for various application requirements.

Another important characteristic of the CY7C1324H is its low pin count, consisting of only 32 pins, which aids in minimizing board space and simplifying design layouts. The packaging comes in a 44-lead Thin Quad Flat Pack (TQFP), further optimizing space usage in compact electronic designs.

In summary, the Cypress CY7C1324H is a versatile, high-speed SRAM solution that offers a combination of large memory capacity, rapid access times, and low power operation. Its robust features make it an excellent choice for a broad spectrum of electronic applications, paving the way for enhanced performance and efficiency in modern electronic systems.
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