Cypress CY7C1324H manual Features, Functional Description1, Logic Block Diagram

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CY7C1324H

2-Mbit (128K x 18) Flow-Through Sync SRAM

Features

•128K x 18 common I/O

•3.3V core power supply

•3.3V/2.5V I/O supply

•Fast clock-to-output times

— 6.5 ns (133-MHz version)

•Provide high-performance 2-1-1-1 access rate

•User-selectable burst counter supporting Intel→ Pentium→ interleaved or linear burst sequences

•Separate processor and controller address strobes

•Synchronous self-timed write

•Asynchronous output enable

•Offered in JEDEC-standard lead-free 100-pin TQFP package

•“ZZ” Sleep Mode option

Functional Description[1]

The CY7C1324H is a 128K x 18 synchronous cache RAM designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133-MHz version). A 2-bit on-chip counter captures the

first address in a burst and increments the address automati- cally for the rest of the burst access. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input (CLK). The synchronous inputs include all addresses, all data inputs, address-pipelining Chip Enable (CE1), depth-expansion Chip Enables (CE2 and CE3), Burst Control inputs (ADSC, ADSP, and ADV), Write Enables (BW[A:B], and BWE), and Global Write (GW). Asynchronous inputs include the Output Enable (OE) and the ZZ pin. The CY7C1324H allows either interleaved or linear burst sequences, selected by the MODE input pin. A HIGH selects an interleaved burst sequence, while a LOW selects a linear burst sequence. Burst accesses can be initiated with the Processor Address Strobe (ADSP) or the cache Controller Address Strobe (ADSC) inputs. Address advancement is controlled by the Address Advancement (ADV) input. Addresses and chip enables are registered at rising edge of clock when either Address Strobe Processor (ADSP) or Address Strobe Controller (ADSC) are active. Subsequent burst addresses can be internally generated as controlled by the Advance pin (ADV).

The CY7C1324H operates from a +3.3V core power supply while all outputs may operate with either a +3.3V or +2.5V supply. All inputs and outputs are JEDEC-standard JESD8-5-compatible.

Logic Block Diagram

 

 

 

 

 

A0,A1,A

ADDRESS

 

 

 

 

 

REGISTER

 

 

 

 

 

 

 

 

 

 

 

MODE

 

 

A[1:0]

 

 

 

 

 

 

 

 

 

ADV

 

BURST

Q1

 

 

 

CLK

 

COUNTER AND

 

 

 

 

 

LOGIC

 

 

 

 

 

 

CLR

Q0

 

 

 

ADSC

 

 

 

 

 

 

ADSP

 

 

 

 

 

 

 

DQB,DQPB

 

DQB,DQPB

 

 

 

 

 

WRITE DRIVER

 

 

 

BWB

WRITE REGISTER

 

 

 

 

 

 

MEMORY

SENSE

OUTPUT

DQs

 

 

 

ARRAY

AMPS

BUFFERS

DQPA

 

 

 

 

 

DQA,DQPA

 

DQA,DQPA

 

 

DQPB

BWA

 

WRITE DRIVER

 

 

 

WRITE REGISTER

 

 

 

 

 

 

 

 

 

BWE

 

 

 

 

INPUT

 

GW

 

 

 

 

 

ENABLE

 

 

 

REGISTERS

 

CE1

 

 

 

 

REGISTER

 

 

 

 

 

CE2

 

 

 

 

 

 

 

 

 

 

 

CE3

 

 

 

 

 

 

OE

 

 

 

 

 

 

ZZ

SLEEP

 

 

 

 

 

 

CONTROL

 

 

 

 

 

Note:

 

 

 

 

 

 

1. For best-practices recommendations, please refer to the Cypress application note System Design Guidelines on www.cypress.com.

Cypress Semiconductor Corporation

•

198 Champion Court • San Jose, CA 95134-1709

•

408-943-2600

Document #: 001-00208 Rev. *B

 

Revised April 26, 2006

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Contents Logic Block Diagram FeaturesFunctional Description1 Cypress Semiconductor CorporationSelection Guide Pin Configurations15CY7C1324H 133 MHz UnitPin Definitions Interleaved Burst Address Table Mode = Floating or VDD Sleep ModeLinear Burst Address Table Mode = GND Functional OverviewParameter Description Test Conditions Min Max Unit ZZ Mode Electrical CharacteristicsAddress Cycle Description UsedFunction Truth Table for Read/Write 2BWE Operating Range Maximum RatingsAmbient Range Thermal Resistance8 Capacitance8AC Test Loads and Waveforms Switching Characteristics Over the Operating Range9 Read Cycle Timing15 Timing DiagramsDON’T Care Write Cycle Timing15Adsp Adsc Read/Write Timing15, 17Address Burst ReadZZ Mode Timing19 Ordering Information Package DiagramPin Tqfp 14 x 20 x 1.4 mm Document History Issue Date Orig. Description of ChangeREV ECN no

CY7C1324H specifications

The Cypress CY7C1324H is a high-performance SRAM (Static Random Access Memory) device that plays a crucial role in various applications requiring fast and efficient data access. This device is part of the CY7C family of SRAM products and stands out for its advanced features, robust performance metrics, and versatility in operation.

One of the most notable features of the CY7C1324H is its 32 megabit (4M x 8) memory capacity, which allows for significant data storage and retrieval capabilities. This memory is organized as a 4M word by 8 bits, making it suitable for a wide range of applications, from automotive to telecommunications and industrial control systems.

The CY7C1324H operates at a speed of 20 nanoseconds, making it an ideal choice for systems that require rapid read and write cycles. The device supports both asynchronous read and write operations, allowing for flexible interfacing with various microcontrollers and digital signal processors. This speed enhances overall system performance, especially when handling time-critical data.

In terms of technologies, the CY7C1324H employs high-speed CMOS (Complementary Metal-Oxide-Semiconductor) technology, which contributes to its low power consumption and high reliability. The device operates at a voltage range of 2.7V to 3.6V, making it suitable for battery-powered applications where energy efficiency is paramount. The integration of advanced CMOS technology also facilitates a higher degree of integration, enabling more compact designs in electronic circuits.

The device features a simple and straightforward interface, with a single enable (E) control pin that allows for easy access to memory contents. Additionally, the CY7C1324H supports both byte-wide and word-wide data accesses, making it highly adaptable for various application requirements.

Another important characteristic of the CY7C1324H is its low pin count, consisting of only 32 pins, which aids in minimizing board space and simplifying design layouts. The packaging comes in a 44-lead Thin Quad Flat Pack (TQFP), further optimizing space usage in compact electronic designs.

In summary, the Cypress CY7C1324H is a versatile, high-speed SRAM solution that offers a combination of large memory capacity, rapid access times, and low power operation. Its robust features make it an excellent choice for a broad spectrum of electronic applications, paving the way for enhanced performance and efficiency in modern electronic systems.
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