Cypress CY7C1352G manual Pin Definitions

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CY7C1352G

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Pin Definitions

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Name

I/O

Description

 

 

 

 

 

 

 

A0, A1, A

Input-

Address Inputs used to select one of the 256K address locations. Sampled at the rising

 

 

 

 

 

 

 

 

 

Synchronous

edge of the CLK. A[1:0] are fed to the two-bit burst counter.

 

 

 

 

 

[A:B]

Input-

Byte Write Inputs, active LOW. Qualified with

 

to conduct writes to the SRAM. Sampled

 

 

BW

WE

 

 

 

 

 

 

 

 

 

Synchronous

on the rising edge of CLK.

 

 

 

 

 

 

 

 

 

Input-

Write Enable Input, active LOW. Sampled on the rising edge of CLK if

 

is active LOW.

 

 

WE

CEN

 

 

 

 

 

 

 

 

 

Synchronous

This signal must be asserted LOW to initiate a write sequence.

 

 

 

 

 

 

 

 

 

Input-

Advance/Load Input. Used to advance the on-chip address counter or load a new address.

 

 

ADV/LD

 

 

 

 

 

 

 

 

 

 

Synchronous

When HIGH (and CEN is asserted LOW) the internal burst counter is advanced. When LOW,

 

 

 

 

 

 

 

 

 

 

 

 

a new address can be loaded into the device for an access. After being deselected, ADV/LD

 

 

 

 

 

 

 

 

 

 

 

 

should be driven LOW in order to load a new address.

 

 

CLK

Input-Clock

Clock Input. Used to capture all synchronous inputs to the device. CLK is qualified with

 

 

 

 

CEN.

 

 

 

 

 

 

 

 

 

 

 

 

CLK is only recognized if CEN is active LOW.

 

 

 

1

 

Input-

Chip Enable 1 Input, active LOW. Sampled on the rising edge of CLK. Used in conjunction

 

 

CE

 

 

 

 

 

 

 

 

 

Synchronous

with CE2 and CE3 to select/deselect the device.

 

 

CE2

Input-

Chip Enable 2 Input, active HIGH. Sampled on the rising edge of CLK. Used in conjunction

 

 

 

 

 

 

 

 

 

Synchronous

with CE1 and CE3 to select/deselect the device.

 

 

 

3

 

Input-

Chip Enable 3 Input, active LOW. Sampled on the rising edge of CLK. Used in conjunction

 

 

CE

 

 

 

 

 

 

 

 

 

Synchronous

with CE1 and CE2 to select/deselect the device.

 

 

 

 

 

 

Input-

Output Enable, asynchronous input, active LOW. Combined with the synchronous logic

 

 

OE

 

 

 

 

 

 

 

 

 

Asynchronous

block inside the device to control the direction of the I/O pins. When LOW, the DQ pins are

 

 

 

 

 

 

 

 

 

 

 

 

allowed to behave as outputs. When deasserted HIGH, DQ pins are tri-stated, and act as input

 

 

 

 

 

 

 

 

 

 

 

 

data pins. OE is masked during the data portion of a write sequence, during the first clock when

 

 

 

 

 

 

 

 

 

 

 

 

emerging from a deselected state, when the device has been deselected.

 

 

 

 

 

 

 

Input-

Clock Enable Input, active LOW. When asserted LOW the Clock signal is recognized by the

 

 

CEN

 

 

 

 

 

 

 

 

 

Synchronous

SRAM. When deasserted HIGH the Clock signal is masked. Since deasserting CEN does not

 

 

 

 

 

 

 

 

 

 

 

 

deselect the device, CEN can be used to extend the previous cycle when required.

 

 

ZZ

Input-

ZZ “sleep” Input. This active HIGH input places the device in a non-time-critical “sleep”

 

 

 

 

 

 

 

 

 

Asynchronous

condition with data integrity preserved. During normal operation, this pin has to be low or left

 

 

 

 

 

 

 

 

 

 

 

 

floating. ZZ pin has an internal pull-down.

 

 

DQs

I/O-

Bidirectional Data I/O Lines. As inputs, they feed into an on-chip data register that is triggered

 

 

 

 

 

 

 

 

 

Synchronous

by the rising edge of CLK. As outputs, they deliver the data contained in the memory location

 

 

 

 

 

 

 

 

 

 

 

 

specified by the address during the clock rise of the read cycle. The direction of the pins is

 

 

 

 

 

 

 

 

 

 

 

 

controlled by OE and the internal control logic. When OE is asserted LOW, the pins can behave

 

 

 

 

 

 

 

 

 

 

 

 

as outputs. When HIGH, DQs and DQP[A:B] are placed in a tri-state condition. The outputs are

 

 

 

 

 

 

 

 

 

 

 

 

automatically tri-stated during the data portion of a write sequence, during the first clock when

 

 

 

 

 

 

 

 

 

 

 

 

emerging from a deselected state, and when the device is deselected, regardless of the state

 

 

 

 

 

 

 

 

 

 

 

 

of OE.

 

 

DQP[A:B]

I/O-

Bidirectional Data Parity I/O Lines. Functionally, these signals are identical to DQs. During

 

 

 

 

 

 

 

 

 

Synchronous

write sequences, DQP[A:B] is controlled by BW[A:B] correspondingly.

 

 

MODE

Input Strap Pin

Mode Input. Selects the burst order of the device.

 

 

 

 

 

 

 

 

 

 

 

 

When tied to Gnd selects linear burst sequence. When tied to VDD or left floating selects

 

 

 

 

 

 

 

 

 

 

 

 

interleaved burst sequence.

 

 

VDD

Power Supply

Power supply inputs to the core of the device.

 

 

VDDQ

I/O Power Supply

Power supply for the I/O circuitry.

 

 

VSS

Ground

Ground for the device.

 

 

NC

No Connects. Not internally connected to the die.

 

 

 

 

 

 

 

NC/36M,

No Connects. Not internally connected to the die. NC/36M, NC/72M, NC/144M, NC/288M are

 

 

NC/72M,

 

 

 

address expansion pins are not internally connected to the die.

 

 

NC/144M,

 

 

 

 

 

 

 

 

 

 

 

 

 

NC/288M

 

 

 

 

 

 

 

 

 

 

 

Document #: 38-05514 Rev. *D

 

 

 

 

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Contents Cypress Semiconductor Corporation FeaturesLogic Block Diagram Functional Description1250 MHz 200 MHz 166 MHz 133 MHz Unit Pin ConfigurationMaximum Access Time Maximum Operating Current Selection GuidePin Definitions Functional Overview Truth Table for Read/Write 2 Interleaved Burst Address Table Mode = Floating or VDDLinear Burst Address Table Mode = GND ZZ Mode Electrical CharacteristicsGND ≤ V I ≤ V DDQ Maximum RatingsOperating Range Ambient RangeCapacitance11 Thermal Resistance11AC Test Loads and Waveforms Switching Characteristics Over the Operating Range 16 Read/Write Timing18, 19 Switching WaveformsNOP Read ZZ Mode Timing22NOP, STALL, and Deselect Cycles18, 19 StallPackage Diagram Ordering InformationPin Tqfp 14 x 20 x 1.4 mm Document History Issue Orig. Description of Change Date