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| CY7C1352G | ||||
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| Pin Definitions |
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| Name | I/O | Description | ||||||||||||
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| A0, A1, A | Input- | Address Inputs used to select one of the 256K address locations. Sampled at the rising | |||||||||||||||
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| Synchronous | edge of the CLK. A[1:0] are fed to the | |||||||||
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| [A:B] | Input- | Byte Write Inputs, active LOW. Qualified with |
| to conduct writes to the SRAM. Sampled | ||||||||||
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| BW | WE | ||||||||||||||||
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| Synchronous | on the rising edge of CLK. | |||||||||
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| Input- | Write Enable Input, active LOW. Sampled on the rising edge of CLK if |
| is active LOW. | |||||||
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| WE | CEN | ||||||||||||||||
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| Synchronous | This signal must be asserted LOW to initiate a write sequence. | |||||||||
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| Input- | Advance/Load Input. Used to advance the | |||||||||
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| ADV/LD |
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| Synchronous | When HIGH (and CEN is asserted LOW) the internal burst counter is advanced. When LOW, | |||||||||
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| a new address can be loaded into the device for an access. After being deselected, ADV/LD | |||||||
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| should be driven LOW in order to load a new address. | |||||||
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| CLK | Clock Input. Used to capture all synchronous inputs to the device. CLK is qualified with |
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| CEN. | |||||||||||||||||
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| CLK is only recognized if CEN is active LOW. | |||||||
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| 1 |
| Input- | Chip Enable 1 Input, active LOW. Sampled on the rising edge of CLK. Used in conjunction | |||||||||||||
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| CE | |||||||||||||||||
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| Synchronous | with CE2 and CE3 to select/deselect the device. | |||||||||
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| CE2 | Input- | Chip Enable 2 Input, active HIGH. Sampled on the rising edge of CLK. Used in conjunction | |||||||||||||||
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| Synchronous | with CE1 and CE3 to select/deselect the device. | |||||||||
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| 3 |
| Input- | Chip Enable 3 Input, active LOW. Sampled on the rising edge of CLK. Used in conjunction | |||||||||||||
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| CE | |||||||||||||||||
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| Synchronous | with CE1 and CE2 to select/deselect the device. | |||||||||
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| Input- | Output Enable, asynchronous input, active LOW. Combined with the synchronous logic | ||||||||||||
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| OE | |||||||||||||||||
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| Asynchronous | block inside the device to control the direction of the I/O pins. When LOW, the DQ pins are | |||||||||
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| allowed to behave as outputs. When deasserted HIGH, DQ pins are | |||||||
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| data pins. OE is masked during the data portion of a write sequence, during the first clock when | |||||||
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| emerging from a deselected state, when the device has been deselected. | |||||||
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| Input- | Clock Enable Input, active LOW. When asserted LOW the Clock signal is recognized by the | |||||||||||
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| CEN | |||||||||||||||||
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| Synchronous | SRAM. When deasserted HIGH the Clock signal is masked. Since deasserting CEN does not | |||||||||
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| deselect the device, CEN can be used to extend the previous cycle when required. | |||||||
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| ZZ | Input- | ZZ “sleep” Input. This active HIGH input places the device in a | |||||||||||||||
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| Asynchronous | condition with data integrity preserved. During normal operation, this pin has to be low or left | |||||||||
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| floating. ZZ pin has an internal | |||||||
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| DQs | I/O- | Bidirectional Data I/O Lines. As inputs, they feed into an | |||||||||||||||
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| Synchronous | by the rising edge of CLK. As outputs, they deliver the data contained in the memory location | |||||||||
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| specified by the address during the clock rise of the read cycle. The direction of the pins is | |||||||
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| controlled by OE and the internal control logic. When OE is asserted LOW, the pins can behave | |||||||
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| as outputs. When HIGH, DQs and DQP[A:B] are placed in a | |||||||
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| automatically | |||||||
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| emerging from a deselected state, and when the device is deselected, regardless of the state | |||||||
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| of OE. | |||||||
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| DQP[A:B] | I/O- | Bidirectional Data Parity I/O Lines. Functionally, these signals are identical to DQs. During | |||||||||||||||
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| Synchronous | write sequences, DQP[A:B] is controlled by BW[A:B] correspondingly. | |||||||||
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| MODE | Input Strap Pin | Mode Input. Selects the burst order of the device. | |||||||||||||||
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| When tied to Gnd selects linear burst sequence. When tied to VDD or left floating selects | |||||||
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| interleaved burst sequence. | |||||||
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| VDD | Power Supply | Power supply inputs to the core of the device. | |||||||||||||||
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| VDDQ | I/O Power Supply | Power supply for the I/O circuitry. | |||||||||||||||
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| VSS | Ground | Ground for the device. | |||||||||||||||
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| NC | – | No Connects. Not internally connected to the die. | |||||||||||||||
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| NC/36M, | – | No Connects. Not internally connected to the die. NC/36M, NC/72M, NC/144M, NC/288M are | |||||||||||||||
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| NC/72M, |
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| address expansion pins are not internally connected to the die. | |||||||||||||
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| NC/144M, |
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| NC/288M |
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Document #: |
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| Page 3 of 12 |
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