Cypress CY7C1019D manual Features, Functional Description, Logic Block Diagram

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CY7C1019D

1-Mbit (128K x 8) Static RAM

Features

•Pin- and function-compatible with CY7C1019B

•High speed

—tAA = 10 ns

•Low active power

—ICC = 80 mA @ 10 ns

•Low CMOS standby power

—ISB2 = 3 mA

•2.0V Data retention

•Automatic power-down when deselected

•CMOS for optimum speed/power

•Center power/ground pinout

•Easy memory expansion with CE and OE options

•Functionally equivalent to CY7C1019B

•Available in Pb-free 32-pin 400-Mil wide Molded SOJ and 32-pin TSOP II packages

Functional Description [1]

The CY7C1019D is a high-performance CMOS static RAM organized as 131,072 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an active LOW Output Enable (OE), and tri-state drivers. This device has an automatic power-down feature that significantly reduces power consumption when deselected. The eight input and output pins (IO0 through IO7) are placed in a high-impedance state when:

•Deselected (CE HIGH)

•Outputs are disabled (OE HIGH)

•When the write operation is active (CE LOW, and WE LOW).

Write to the device by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. Data on the eight IO pins (IO0 through IO7) is then written into the location specified on the address pins (A0 through A16).

Read from the device by taking Chip Enable (CE) and Output Enable (OE) LOW while forcing Write Enable (WE) HIGH. Under these conditions, the contents of the memory location specified by the address pins appears on the IO pins.

Logic Block Diagram

 

 

INPUT BUFFER

 

 

IO0

 

 

 

 

 

 

 

 

 

 

IO1

A0

 

 

 

 

 

 

 

 

 

 

A1

DECODERROW

 

 

 

 

 

 

 

SENSEAMPS

IO2

A7

 

 

 

 

 

 

 

IO5

A2

 

 

128K x 8

 

 

 

 

A3

 

 

 

 

 

 

 

 

 

IO3

A4

 

 

 

ARRAY

 

 

 

 

A5

 

 

 

 

 

 

IO4

 

 

 

 

 

 

 

 

 

A6

 

 

 

 

 

 

 

 

 

 

A8

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IO6

CE

 

 

 

 

 

 

 

 

POWER

IO7

 

COLUMN DECODER

WE

DOWN

 

 

 

 

 

 

 

 

 

 

OE

 

 

 

 

 

 

 

 

 

 

 

9

10

11

12

13

14

15

16

 

 

 

A

A

A

A

A A A A

 

 

Note

1. For guidelines on SRAM system design, please refer to the ‘System Design Guidelines’ Cypress application note, available on the internet at www.cypress.com.

Cypress Semiconductor Corporation

• 198 Champion Court • San Jose, CA 95134-1709

•

408-943-2600

Document #: 38-05464 Rev. *E

Revised February 22, 2007

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Contents Logic Block Diagram FeaturesFunctional Description Cypress Semiconductor CorporationSelection Guide Pin ConfigurationTop View Industrial UnitMaximum Ratings Electrical Characteristics Over the Operating RangeOperating Range Range AmbientThermal Resistance CapacitanceAC Test Loads and Waveforms Parameter Description Industrial Unit Min Max Read Cycle Switching Waveforms Data Retention Characteristics Over the Operating RangeData Retention Waveform Parameter Description Conditions Min Max UnitWrite Cycle No WE Controlled, OE High During Write 16 Write Cycle No CE Controlled 16Data IO Data Valid Data IO Data in ValidTruth Table IO 0-IO Mode PowerOrdering Information Pin 400-Mil Molded SOJ Package DiagramsPin Thin Small Outline Package Type II Document History Issue Date Orig. Description of Change

CY7C1019D specifications

The Cypress CY7C1019D is a high-performance static random-access memory (SRAM) chip designed for various applications requiring fast and reliable memory solutions. This RAM chip is particularly noted for its high-speed performance, low power consumption, and versatility, making it suitable for a wide range of electronic devices and systems.

One of the main features of the CY7C1019D is its fast access time, which typically ranges from 10 ns to 15 ns. This rapid access time allows for efficient data processing and fast response times in applications such as telecommunications, networking, and consumer electronics. The chip operates at standard voltages of 2.7V to 3.6V, ensuring compatibility with modern low-voltage systems while also reducing power consumption.

Another noteworthy characteristic of the CY7C1019D is its density of 1 Megabit, organized in a 128K x 8 architecture. This configuration provides ample memory space for various data storage needs, whether in embedded systems, automotive applications, or high-speed buffering. The SRAM's structure allows for simultaneous read and write operations, enhancing overall system performance.

The CY7C1019D employs advanced CMOS technology, which contributes to its low power operation. This feature is crucial for battery-powered devices and applications where energy efficiency is a priority. The chip supports a range of operating temperatures, making it suitable for both consumer and industrial applications.

Moreover, the CY7C1019D includes various useful features such as a fast burst mode for high-speed data transfer, and it supports asynchronous data rates, enhancing its adaptability across different platforms. Its simple interface allows for easy integration into existing system architectures.

The package options for the CY7C1019D include both 32-pin and 44-pin flat packages, making it accessible for different PCB layouts and design requirements. This flexibility further contributes to its wide usage in various industries, including automotive, telecommunications, and industrial control systems.

In conclusion, the Cypress CY7C1019D SRAM chip stands out as a reliable, high-speed memory component, ideal for applications demanding quick access and efficient data management. Its combination of speed, low power consumption, and versatility makes it a preferred choice for designers looking to enhance system performance and reliability.
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