Cypress CY7C1019D Maximum Ratings, Electrical Characteristics Over the Operating Range, Speed

Page 3

CY7C1019D

Maximum Ratings

Exceeding the maximum ratings may impair the useful life of the device. These user guidelines are not tested.

Storage Temperature

–65°C to +150°C

Ambient Temperature with

 

 

 

Power Applied

–55°C to +125°C

Supply Voltage on VCC to Relative GND [2] ... –0.5V to +6.0V

DC Voltage Applied to Outputs

 

 

 

in High-Z State [2]

–0.5V to V

CC

+ 0.5V

DC Input Voltage [2]

 

 

–0.5V to V

CC

+ 0.5V

 

 

 

Electrical Characteristics (Over the Operating Range)

Current into Outputs (LOW)

20 mA

Static Discharge Voltage

> 2001V

(per MIL-STD-883, Method 3015)

 

Latch-up Current

> 200 mA

Operating Range

Range

Ambient

VCC

Speed

Temperature

Industrial

–40°C to +85°C

5V ± 0.5V

10 ns

 

 

 

 

Parameter

Description

 

 

Test Conditions

 

–10 (Industrial)

Unit

 

 

 

 

 

 

 

 

Min

Max

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VOH

Output HIGH Voltage

IOH = –4.0 mA

 

2.4

 

V

VOL

Output LOW Voltage

IOL = 8.0 mA

 

 

0.4

V

VIH

Input HIGH Voltage

 

 

 

 

 

2.2

VCC + 0.5

V

VIL

Input LOW Voltage [2]

 

 

 

 

 

–0.5

0.8

V

IIX

Input Leakage Current

GND < VI < VCC

 

–1

+1

µA

IOZ

Output Leakage Current

GND < VI < VCC, Output Disabled

–1

+1

µA

ICC

VCC Operating Supply Current

VCC = Max,

100 MHz

 

80

mA

 

 

IOUT = 0 mA,

 

 

 

 

 

 

83 MHz

 

72

mA

 

 

f = fmax = 1/tRC

 

 

 

 

 

 

 

 

 

 

 

 

 

66 MHz

 

58

mA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

40 MHz

 

37

mA

 

 

 

 

 

 

 

 

 

ISB1

Automatic CE Power-Down

Max VCC,

 

> VIH

 

 

10

mA

CE

 

 

 

Current—TTL Inputs

VIN > VIH or VIN < VIL, f = fmax

 

 

 

 

ISB2

Automatic CE Power-Down

Max VCC,

 

 

> VCC – 0.3V,

 

 

3

mA

CE

 

 

 

Current—CMOS Inputs

VIN > VCC – 0.3V, or VIN < 0.3V, f = 0

 

 

 

Note

2. VIL (min) = –2.0V and VIH(max) = VCC + 1V for pulse durations of less than 5 ns.

Document #: 38-05464 Rev. *E

Page 3 of 11

[+] Feedback

Image 3
Contents Cypress Semiconductor Corporation FeaturesLogic Block Diagram Functional DescriptionIndustrial Unit Pin ConfigurationSelection Guide Top ViewRange Ambient Electrical Characteristics Over the Operating RangeMaximum Ratings Operating RangeCapacitance Thermal ResistanceAC Test Loads and Waveforms Parameter Description Industrial Unit Min Max Read Cycle Parameter Description Conditions Min Max Unit Data Retention Characteristics Over the Operating RangeSwitching Waveforms Data Retention WaveformData IO Data in Valid Write Cycle No CE Controlled 16Write Cycle No WE Controlled, OE High During Write 16 Data IO Data ValidIO 0-IO Mode Power Truth TableOrdering Information Pin 400-Mil Molded SOJ Package DiagramsPin Thin Small Outline Package Type II Document History Issue Date Orig. Description of Change

CY7C1019D specifications

The Cypress CY7C1019D is a high-performance static random-access memory (SRAM) chip designed for various applications requiring fast and reliable memory solutions. This RAM chip is particularly noted for its high-speed performance, low power consumption, and versatility, making it suitable for a wide range of electronic devices and systems.

One of the main features of the CY7C1019D is its fast access time, which typically ranges from 10 ns to 15 ns. This rapid access time allows for efficient data processing and fast response times in applications such as telecommunications, networking, and consumer electronics. The chip operates at standard voltages of 2.7V to 3.6V, ensuring compatibility with modern low-voltage systems while also reducing power consumption.

Another noteworthy characteristic of the CY7C1019D is its density of 1 Megabit, organized in a 128K x 8 architecture. This configuration provides ample memory space for various data storage needs, whether in embedded systems, automotive applications, or high-speed buffering. The SRAM's structure allows for simultaneous read and write operations, enhancing overall system performance.

The CY7C1019D employs advanced CMOS technology, which contributes to its low power operation. This feature is crucial for battery-powered devices and applications where energy efficiency is a priority. The chip supports a range of operating temperatures, making it suitable for both consumer and industrial applications.

Moreover, the CY7C1019D includes various useful features such as a fast burst mode for high-speed data transfer, and it supports asynchronous data rates, enhancing its adaptability across different platforms. Its simple interface allows for easy integration into existing system architectures.

The package options for the CY7C1019D include both 32-pin and 44-pin flat packages, making it accessible for different PCB layouts and design requirements. This flexibility further contributes to its wide usage in various industries, including automotive, telecommunications, and industrial control systems.

In conclusion, the Cypress CY7C1019D SRAM chip stands out as a reliable, high-speed memory component, ideal for applications demanding quick access and efficient data management. Its combination of speed, low power consumption, and versatility makes it a preferred choice for designers looking to enhance system performance and reliability.