Cypress CY7C1019D Write Cycle No CE Controlled 16, Data IO Data Valid, Data IO Data in Valid

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CY7C1019D

Switching Waveforms (continued)

Write Cycle No. 1 (CE Controlled) [16, 17]

 

tWC

 

ADDRESS

 

 

 

tSCE

 

CE

 

 

tSA

 

 

tAW

tSCE

tHA

tPWE

 

 

WE

 

 

 

tSD

tHD

DATA IO

DATA VALID

 

Write Cycle No. 2 (WE Controlled, OE HIGH During Write) [16, 17]

 

 

tWC

 

ADDRESS

 

 

 

 

 

tSCE

 

CE

 

 

 

 

tAW

 

tHA

 

tSA

tPWE

 

WE

 

 

 

OE

 

 

 

 

 

tSD

t

 

 

 

HD

DATA IO

NOTE 18

DATAIN VALID

 

 

tHZOE

 

 

Notes

16.Data IO is high impedance if OE = VIH.

17.If CE goes HIGH simultaneously with WE going HIGH, the output remains in a high-impedance state.

18.During this period the IOs are in the output state and input signals should not be applied.

Document #: 38-05464 Rev. *E

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Contents Cypress Semiconductor Corporation FeaturesLogic Block Diagram Functional DescriptionIndustrial Unit Pin ConfigurationSelection Guide Top ViewRange Ambient Electrical Characteristics Over the Operating RangeMaximum Ratings Operating RangeThermal Resistance CapacitanceAC Test Loads and Waveforms Parameter Description Industrial Unit Min Max Read Cycle Parameter Description Conditions Min Max Unit Data Retention Characteristics Over the Operating RangeSwitching Waveforms Data Retention WaveformData IO Data in Valid Write Cycle No CE Controlled 16Write Cycle No WE Controlled, OE High During Write 16 Data IO Data ValidTruth Table IO 0-IO Mode PowerOrdering Information Pin 400-Mil Molded SOJ Package DiagramsPin Thin Small Outline Package Type II Document History Issue Date Orig. Description of Change

CY7C1019D specifications

The Cypress CY7C1019D is a high-performance static random-access memory (SRAM) chip designed for various applications requiring fast and reliable memory solutions. This RAM chip is particularly noted for its high-speed performance, low power consumption, and versatility, making it suitable for a wide range of electronic devices and systems.

One of the main features of the CY7C1019D is its fast access time, which typically ranges from 10 ns to 15 ns. This rapid access time allows for efficient data processing and fast response times in applications such as telecommunications, networking, and consumer electronics. The chip operates at standard voltages of 2.7V to 3.6V, ensuring compatibility with modern low-voltage systems while also reducing power consumption.

Another noteworthy characteristic of the CY7C1019D is its density of 1 Megabit, organized in a 128K x 8 architecture. This configuration provides ample memory space for various data storage needs, whether in embedded systems, automotive applications, or high-speed buffering. The SRAM's structure allows for simultaneous read and write operations, enhancing overall system performance.

The CY7C1019D employs advanced CMOS technology, which contributes to its low power operation. This feature is crucial for battery-powered devices and applications where energy efficiency is a priority. The chip supports a range of operating temperatures, making it suitable for both consumer and industrial applications.

Moreover, the CY7C1019D includes various useful features such as a fast burst mode for high-speed data transfer, and it supports asynchronous data rates, enhancing its adaptability across different platforms. Its simple interface allows for easy integration into existing system architectures.

The package options for the CY7C1019D include both 32-pin and 44-pin flat packages, making it accessible for different PCB layouts and design requirements. This flexibility further contributes to its wide usage in various industries, including automotive, telecommunications, and industrial control systems.

In conclusion, the Cypress CY7C1019D SRAM chip stands out as a reliable, high-speed memory component, ideal for applications demanding quick access and efficient data management. Its combination of speed, low power consumption, and versatility makes it a preferred choice for designers looking to enhance system performance and reliability.