Cypress CY62157ESL manual Write Cycle No 1 WE Controlled 13, 17

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CY62157ESL MoBL®

Switching Waveforms (continued)

Figure 4. Write Cycle No 1: WE Controlled [13, 17, 18]

 

 

tWC

ADDRESS

 

 

 

 

tSCE

CE

 

 

 

tAW

tHA

WE

tSA

tPWE

 

 

BHE/BLE

 

tBW

OE

 

tHD

 

 

tSD

DATA IO

NOTE 19

DATAIN

 

tHZOE

 

Figure 5. Write Cycle 2: CE Controlled [13, 17, 18]

 

 

tWC

 

ADDRESS

 

 

 

 

 

tSCE

 

CE

 

 

 

 

tSA

 

tHA

 

tAW

 

WE

 

tPWE

 

 

 

 

BHE/BLE

 

tBW

 

OE

 

 

 

 

 

tSD

t

 

 

 

HD

DATA IO

NOTE 19

DATAIN

 

 

tHZOE

 

 

Notes

17.Data IO is high impedance if OE = VIH.

18.If CE goes HIGH simultaneously with WE = VIH, the output remains in a high impedance state.

19.During this period, the IOs are in output state. Do not apply input signals.

Document #: 001-43141 Rev. **

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Contents Features Logic Block DiagramFunctional Description Cypress Semiconductor Corporation 198 Champion CourtPin Configuration Product PortfolioElectrical Characteristics Maximum RatingsOperating Range Device Range AmbientCapacitance Thermal ResistanceAC Test Loads and Waveforms TsopParameter Description Conditions Min Typ Max Unit Data Retention CharacteristicsData Retention Waveform Write Cycle13 Switching CharacteristicsParameter Read Cycle Description 45 ns Min Max Unit Switching Waveforms Read Cycle No.1 Address Transition ControlledWrite Cycle No 1 WE Controlled 13, 17 Write Cycle 3 WE controlled, OE LOW Inputs/Outputs Mode Power Ordering InformationBHE BLE CY62157ESL-45ZSXIPackage Diagrams Issue Date Orig. Change Description of Change 1875228 New Data SheetDocument History REV ECN no