Cypress CY62157ESL manual Maximum Ratings, Operating Range, Electrical Characteristics

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CY62157ESL MoBL®

Maximum Ratings

Exceeding the maximum ratings may impair the useful life of the device. These user guidelines are not tested.

Storage Temperature

–65°C to +150°C

Ambient Temperature with

 

Power Applied

–55°C to +125°C

Supply Voltage to Ground Potential

–0.5V to 6.0V

DC Voltage Applied to Outputs

 

in High-Z State[3, 4]

–0.5V to 6.0V

DC Input Voltage[3, 4]

–0.5V to 6.0V

Output Current into Outputs (LOW)

20 mA

Static Discharge Voltage

 

>2001V

(MIL-STD-883, Method 3015)

 

 

Latch up Current

 

 

>200 mA

Operating Range

 

 

 

 

 

 

Device

Range

Ambient

[5]

Temperature

VCC

CY62157ESL

Industrial

–40°C to +85°C

2.2V–3.6V,

 

 

 

and

 

 

 

4.5V–5.5V

Electrical Characteristics

Over the Operating Range

 

 

 

 

 

 

 

 

 

 

45 ns

 

 

Parameter

Description

 

 

 

 

Test Conditions

Min

Typ [2]

 

Max

Unit

VOH

Output HIGH Voltage

2.2

< VCC < 2.7

 

 

IOH = –0.1 mA

2.0

 

 

 

V

 

 

2.7

< VCC < 3.6

 

 

IOH = –1.0 mA

2.4

 

 

 

 

 

 

4.5

< VCC < 5.5

 

 

IOH = –1.0 mA

2.4

 

 

 

 

VOL

Output LOW Voltage

2.2

 

< VCC < 2.7

 

 

IOL = 0.1 mA

 

 

 

0.4

V

 

 

2.7

< VCC < 3.6

 

 

IOL = 2.1mA

 

 

 

0.4

 

 

 

4.5

< VCC < 5.5

 

 

IOL = 2.1mA

 

 

 

0.4

 

VIH

Input HIGH Voltage

2.2

< VCC < 2.7

 

 

 

1.8

 

 

VCC + 0.3

V

 

 

2.7

< VCC < 3.6

 

 

 

2.2

 

 

VCC + 0.3

 

 

 

4.5

< VCC < 5.5

 

 

 

2.2

 

 

VCC + 0.5

 

VIL

Input LOW Voltage

2.2

 

< VCC < 2.7

 

 

 

–0.3

 

 

0.6

V

 

 

2.7

< VCC < 3.6

 

 

 

–0.3

 

 

0.8

 

 

 

4.5

< VCC < 5.5

 

 

 

–0.5

 

 

0.8

 

IIX

Input Leakage Current

GND < VI < VCC

 

 

 

–1

 

 

+1

μA

IOZ

Output Leakage Current

GND < VO < VCC, Output Disabled

–1

 

 

+1

μA

ICC

VCC Operating Supply

 

f = fmax = 1/tRC

 

 

VCC = VCCmax

 

18

 

25

mA

 

Current

 

f = 1 MHz

 

 

IOUT = 0 mA,

 

1.8

 

3

 

 

 

 

 

 

 

 

 

CMOS levels

 

 

 

 

 

ISB1

Automatic CE Power

 

 

> VCC − 0.2V, VIN > VCC – 0.2V or VIN < 0.2V,

 

2

 

8

μA

 

CE

 

down Current — CMOS

 

f = fmax (Address and Data Only),

 

 

 

 

 

 

Inputs

 

f = 0 (OE, BHE,

BLE

and WE), VCC = VCC(max)

 

 

 

 

 

ISB2

Automatic CE Power

 

 

> VCC – 0.2V, VIN > VCC – 0.2V or VIN < 0.2V,

 

2

 

8

μA

 

CE

 

down Current — CMOS

 

f = 0, VCC = VCC(max)

 

 

 

 

 

 

Inputs

 

 

 

 

 

 

 

 

 

 

 

 

Notes

3.VIL(min) = –2.0V for pulse durations less than 20 ns.

4.VIH(max) = VCC + 0.75V for pulse durations less than 20 ns.

5.Full Device AC operation assumes a 100 μs ramp time from 0 to VCC (min) and 200 μs wait time after VCC stabilization.

Document #: 001-43141 Rev. **

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Contents Cypress Semiconductor Corporation 198 Champion Court FeaturesLogic Block Diagram Functional DescriptionProduct Portfolio Pin ConfigurationDevice Range Ambient Electrical CharacteristicsMaximum Ratings Operating RangeTsop CapacitanceThermal Resistance AC Test Loads and WaveformsData Retention Characteristics Data Retention WaveformParameter Description Conditions Min Typ Max Unit Switching Characteristics Parameter Read Cycle Description 45 ns Min Max UnitWrite Cycle13 Read Cycle No.1 Address Transition Controlled Switching WaveformsWrite Cycle No 1 WE Controlled 13, 17 Write Cycle 3 WE controlled, OE LOW CY62157ESL-45ZSXI Inputs/Outputs Mode PowerOrdering Information BHE BLEPackage Diagrams REV ECN no Issue Date Orig. Change Description of Change 1875228New Data Sheet Document History