Cypress CY62157ESL manual Write Cycle 3 WE controlled, OE LOW

Page 9

CY62157ESL MoBL®

Switching Waveforms (continued)

Figure 6. Write Cycle 3: WE controlled, OE LOW [18]

 

 

tWC

ADDRESS

 

 

 

 

tSCE

CE

 

 

BHE/BLE

 

tBW

 

tAW

tHA

WE

tSA

tPWE

 

 

 

 

tHD

 

 

tSD

DATA IO

NOTE 19

DATAIN

 

tHZWE

tLZWE

Figure 7. Write Cycle 4: BHE/BLE Controlled, OE LOW [18]

 

 

tWC

ADDRESS

 

 

CE

 

 

 

 

tSCE

 

tAW

tHA

BHE/BLE

 

tBW

 

 

 

tSA

 

WE

 

tPWE

 

tHZWE

tHD

 

 

tSD

DATA IO

NOTE 19

DATAIN

 

 

tLZWE

Document #: 001-43141 Rev. **

Page 9 of 12

[+] Feedback

Image 9
Contents Logic Block Diagram FeaturesFunctional Description Cypress Semiconductor Corporation 198 Champion CourtProduct Portfolio Pin ConfigurationMaximum Ratings Electrical CharacteristicsOperating Range Device Range AmbientThermal Resistance CapacitanceAC Test Loads and Waveforms TsopData Retention Characteristics Data Retention WaveformParameter Description Conditions Min Typ Max Unit Switching Characteristics Parameter Read Cycle Description 45 ns Min Max UnitWrite Cycle13 Read Cycle No.1 Address Transition Controlled Switching WaveformsWrite Cycle No 1 WE Controlled 13, 17 Write Cycle 3 WE controlled, OE LOW Ordering Information Inputs/Outputs Mode PowerBHE BLE CY62157ESL-45ZSXIPackage Diagrams New Data Sheet Issue Date Orig. Change Description of Change 1875228Document History REV ECN no