Cypress CY62167E MoBL Maximum Ratings, Operating Range, Electrical Characteristics, Capacitance

CY62167E MoBL®

Maximum Ratings

Exceeding the maximum ratings may shorten the battery life of the device. User guidelines are not tested.

Storage Temperature	–65°C to + 150°C
Ambient Temperature with
Power Applied	–55°C to + 125°C
Supply Voltage to Ground
Potential	–0.5V to 6.0V
DC Voltage Applied to Outputs
in High-Z State[5, 6]	–0.5V to 6.0V

DC Input Voltage[5, 6]	–0.5V to 6.0V
Output Current into Outputs (LOW)	20 mA
Static Discharge Voltage	>2001V
(MIL-STD-883, Method 3015)
Latch Up Current	>200 mA

Operating Range

Device	Range	Ambient	VCC	[7]
		Temperature
CY62167ELL	Industrial	–40°C to +85°C	4.5V to 5.5V

Electrical Characteristics

Over the Operating Range

Parameter		Description			Test Conditions			45 ns			Unit
							Min	Typ[4]	Max
VOH		Output HIGH Voltage		IOH = –1.0 mA			2.4				V
VOL		Output LOW Voltage		IOL = 2.1mA					0.4		V
VIH		Input HIGH Voltage	VCC = 4.5V to 5.5V				2.2		VCC + 0.5V		V
VIL		Input LOW Voltage	VCC = 4.5V to 5.5V				–0.5		0.7[8]		V
IIX		Input Leakage Current	GND < VI < VCC				–1		+1		∝A
IOZ		Output Leakage Current	GND < VO < VCC, Output Disabled				–1		+1		∝A
ICC		VCC Operating Supply		f = fMAX = 1/tRC		VCC = VCC(max)		25	30		mA
		Current				IOUT = 0 mA
				f = 1 MHz				2.2	4.0		mA
						CMOS levels
	[9]										∝
I		Automatic CE Power Down		CE1 > VCC – 0.2V or CE2 < 0.2V,				1.5	12
											A
SB2		Current—CMOS Inputs		VIN > VCC – 0.2V or VIN < 0.2V,
				f = 0, VCC = VCC(max)
Capacitance[10]
Parameter		Description				Test Conditions			Max	Unit
CIN		Input Capacitance	TA = 25°C, f = 1 MHz,						10	pF
				VCC = VCC(typ)
COUT		Output Capacitance							10	pF
Thermal Resistance[10]
Parameter		Description				Test Conditions			TSOP I	Unit
	ΘJA	Thermal Resistance		Still air, soldered on a 3 × 4.5 inch, two-layer printed circuit					60	°C/W
		(junction to ambient)		board
	ΘJC	Thermal Resistance							4.3	°C/W
		(junction to case)

Notes

5.VIL(min) = –2.0V for pulse durations less than 20 ns.

6.VIH(max) = VCC + 0.75V for pulse durations less than 20 ns.

7.Full Device AC operation is based on a 100 ∝s ramp time from 0 to VCC (min) and 200 ∝s wait time after VCC stabilization.

8.Under DC conditions the device meets a VIL of 0.8V. However, in dynamic conditions Input LOW Voltage applied to the device must not be higher than 0.7V.

9.Only chip enables (CE1 and CE2), byte enables (BHE and BLE) and BYTE need to be tied to CMOS levels to meet the ISB2 / ICCDR spec. Other inputs can be left floating.

10.Tested initially and after any design or process changes that may affect these parameters.

Document #: 001-15607 Rev. *A Page 3 of 12

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