Cypress CY62167E MoBL Document History, REV ECN no, Issue Date Orig. Change Description of Change

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CY62167E MoBL®

Document History Page

Document Title: CY62167E MoBL® 16-Mbit (1M x 16 / 2M x 8) Static RAM

Document Number: 001-15607

REV.

ECN NO.

Issue Date

Orig. of

 

Change

Description of Change

 

 

 

 

 

 

 

 

**

1103145

See ECN

VKN

New Data Sheet

 

 

 

 

 

*A

1138903

See ECN

VKN

Converted from preliminary to final

 

 

 

 

Changed ICC(max) spec from 2.8 mA to 4.0 mA for f=1MHz

 

 

 

 

Changed ICC(typ) spec from 22 mA to 25 mA for f=fmax

 

 

 

 

Changed ICC(max) spec from 25 mA to 30 mA for f=fmax

 

 

 

 

Added footnote# 8 related to VIL

 

 

 

 

Changed ICCDR spec from 10 A to 12 A

 

 

 

 

Added footnote# 14 related to AC timing parameters

Document #: 001-15607 Rev. *A

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Contents Features Logic Block DiagramFunctional Description1 Cypress Semiconductor CorporationPin Configuration 2 Product PortfolioPin Tsop I Top View MinElectrical Characteristics Maximum RatingsOperating Range CapacitanceData Retention Characteristics AC Test Loads and WaveformsData Retention Waveform12 Parameters Values UnitSwitching Characteristics Parameter Description 45 ns Unit Min MaxRead Cycle Write CycleSwitching Waveforms Shows WE controlled write cycle waveforms.17, 21 Data IO Valid DataShows CE1 or CE2 controlled write cycle waveforms.17, 21 Shows BHE/BLE controlled, OE LOW write cycle waveforms.22 Inputs Outputs Mode Power Truth TableOrdering Information BHE BLEPackage Diagram Pin Tsop I 12 mm x 18.4 mm x 1.0 mmIssue Date Orig. Change Description of Change Document HistoryREV ECN no