Cypress CY62148BN manual Document History, REV ECN no, Nxr, Vkn

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CY62148BN MoBL®

Document History Page

Document Title: CY62148BN MoBL® 4-Mbit (512K x 8) Static RAM

Document Number: 001-06517

REV.	ECN NO.	Issue	Orig. of	Description of Change
REV.	ECN NO.	Date	Change	Description of Change

**	426504	See ECN	NXR	New Data Sheet

*A	485639	See ECN	VKN	Corrected the typo in the Array size in the Logic Block Diagram

Document #: 001-06517 Rev. *A

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Contents Functional Description FeaturesLogic Block Diagram Cypress Semiconductor CorporationTsop Pin ConfigurationProduct Portfolio CY62148BNLLOperating Range Electrical Characteristics Over the Operating RangeMaximum Ratings Capacitance4Read Cycle Switching Characteristics5 Over the Operating Range62148BNLL-70 Parameter Description Unit Min Write CycleSwitching Waveforms Data Retention Characteristics Over the Operating RangeData Retention Waveform Data I/O Data Valid Write Cycle No CE Controlled13Write Cycle No WE Controlled, OE High During Write13 Data I/O Data in ValidOrdering Information 0-I/O Mode PowerTruth Table Write Cycle No.3 WE Controlled, OE LOW13Lead 450-Mil Molded Soic Package DiagramsDimensions in Inchesmm MIN Lead Thin Small Outline Package Type IILead Reverse Thin Small Outline Package Type II NXR Document HistoryREV ECN no VKN

Document History Page

REV.

ECN NO.

NXR

VKN