Cypress CY62148BN Data Retention Characteristics Over the Operating Range, Switching Waveforms

CY62148BN MoBL®

Data Retention Characteristics (Over the Operating Range)

Parameter	Description			Conditions	Min.	Typ.[1]	Max.	Unit
VDR	VCC for Data Retention				2.0			V
ICCDR	Data Retention Current	Com’l	LL	No input may exceed			20	∝A
				VCC + 0.3V
		Ind’l	LL				20	∝A
				VCC = VDR = 3.0V
tCDR[4]
	Chip Deselect to Data Retention Time			CE > VCC – 0.3V	0			ns
				VIN > VCC – 0.3V or
tR[9]	Operation Recovery Time				tRC			ns
				VIN < 0.3V

Data Retention Waveform

DATA RETENTION MODE

VCC	3.0V	VDR > 2V	3.0V
	tCDR		tR
CE

Switching Waveforms

Read Cycle No.1[10, 11]

ADDRESS				tRC
			tAA
DATA OUT		tOHA
	PREVIOUS DATA VALID				DATA VALID

Read Cycle No. 2 (OE Controlled)[11, 12]

ADDRESS
		tRC
CE
	tACE
OE		tHZOE
	tDOE
		tHZCE
	tLZOE		HIGH
DATA OUT	HIGH IMPEDANCE	DATA VALID	IMPEDANCE
	tLZCE	tPD
VCC	tPU
			50%
SUPPLY	50%
CURRENT			ISB

Notes:

9. Full Device operation requires linear VCC ramp from VDR to VCC(min) > 100 ms or stable at Vcc(min) > 100 ms. 10. Device is continuously selected. OE, CE = VIL.

11. WE is HIGH for read cycle.

12. Address valid prior to or coincident with CE transition LOW.

Document #: 001-06517 Rev. *A Page 5 of 10

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