Cypress CY62157EV18 manual Package Diagrams, Ball Vfbga 6 x 8 x 1 mm

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CY62157EV18 MoBL®

Package Diagrams

Figure 1. 48-ball VFBGA (6 x 8 x 1 mm), 51-85150

TOP VIEW

BOTTOM VIEW

A1 CORNER

8.00±0.10

A

B

C

D

E

F

G

H

A1 CORNER

1 2 3 4 5 6

8.00±0.10

5.25

0.75

2.625

Ø0.05 M C Ø0.25 M C A B Ø0.30±0.05(48X)

6 5 4 3 2 1

A

B

C

D

E

F

G

H

A

B

0.25 C

0.55 MAX.

 

 

 

 

 

 

 

 

 

6.00±0.10

0.21±0.05

SEATING PLANE

0.10 C

A

1.875

 

 

0.75

 

3.75

B

6.00±0.10

0.15(4X)

 

0.26 MAX.

C

1.00 MAX

51-85150-*D

MoBL is a registered trademark, and More Battery Life is a trademark of Cypress Semiconductor. All product and company names mentioned in this document are the trademarks of their respective holders.

Document #: 38-05490 Rev. *D

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© Cypress Semiconductor Corporation, 2006-2007. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.

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Contents Functional Description FeaturesProduct Portfolio Pin Configuration Logic Block DiagramBall Vfbga Top View Operating Range Electrical Characteristics Over the Operating RangeMaximum Ratings CapacitanceAC Test Loads and Waveforms Data Retention Characteristics Over the Operating RangeThermal Resistance Data Retention WaveformRead Cycle Parameter Description 55 ns Unit MinWrite Cycle Switching Waveforms Read Cycle 1 Address Transition Controlled 17Write Cycle 1 WE Controlled 16, 20 Write Cycle 2 CE 1 or CE 2 Controlled 16, 20Write Cycle 3 WE Controlled, OE LOW Write Cycle 4 BHE/BLE Controlled, OE LOWOrdering Information Inputs/Outputs Mode PowerTruth Table CE1 CE2 BHE BLEPackage Diagrams Ball Vfbga 6 x 8 x 1 mmDocument Title CY62157EV18 MoBL 8-Mbit 512K x 16 Static RAM Issue Date Orig. Description of ChangeDocument History Document Number38-05490Added footnote #7 related to ISB2 Issue Date Orig. Description of Change 908120VKN Added footnote #12 related AC timing parameters

CY62157EV18 specifications

The Cypress CY62157EV18 is a highly advanced static random-access memory (SRAM) chip that has garnered significant attention in the embedded systems and high-speed applications space due to its innovative features and reliable performance. This memory device is designed to meet the rigorous demands of modern electronics by providing fast access speeds and low power consumption.

One of the main features of the CY62157EV18 is its high-density configuration, which offers a substantial memory capacity of 1 megabit (Mb). This capacity is often ideal for applications that require significant data storage without occupying too much physical space on the printed circuit board. The chip uses a 3.3V memory architecture, which enables compatibility with various voltage levels, making it versatile across different systems.

The device's access time is another standout characteristic, boasting a read access time of 10 to 15 nanoseconds. This incredibly fast access time allows for quicker data retrieval, which is crucial for real-time applications such as telecommunications, automotive electronics, and consumer devices. The design incorporates an improved write cycle time of 15 nanoseconds, ensuring that data can be written with minimal delay, further enhancing system performance.

Incorporating advanced CMOS technology, the CY62157EV18 achieves low power consumption while maintaining high-speed performance. It features a standby current of only 0.5 µA under a full ambient temperature range, which is particularly beneficial for battery-powered devices that demand energy efficiency. Additionally, with a wide operating temperature range from -40°C to 125°C, this memory chip is well-suited for industrial and automotive environments, where extreme temperatures can be a concern.

The device also includes full support for asynchronous SRAM operation, allowing for flexible interfacing with various microcontrollers and digital signal processors. With a simple interface that facilitates easy integration into existing designs, the CY62157EV18 offers designers the flexibility they need.

In conclusion, the Cypress CY62157EV18 is characterized by its high density, fast access speeds, low power consumption, and compatibility with a wide range of applications. Its array of features makes it an ideal choice for engineers looking to enhance performance in systems requiring reliable and efficient memory solutions. Whether in consumer electronics, automotive applications, or industrial controls, this SRAM chip continues to be a preferred option among developers seeking both performance and efficiency.