Cypress CY62157EV18 Truth Table, Ordering Information, CE1 CE2 BHE BLE, Inputs/Outputs Mode Power

Page 9

CY62157EV18 MoBL®

Truth Table

CE1

CE2

WE

OE

BHE

BLE

Inputs/Outputs

Mode

Power

H

X

X

X

X

X

High-Z

Deselect/Power Down

Standby (ISB)

X

L

X

X

X

X

High-Z

Deselect/Power Down

Standby (ISB)

X

X

X

X

H

H

High-Z

Deselect/Power Down

Standby (ISB)

L

H

H

L

L

L

Data Out (IO0–IO15)

Read

Active (ICC)

L

H

H

L

H

L

Data Out (IO0–IO7);

Read

Active (ICC)

 

 

 

 

 

 

High-Z (IO8–IO15)

 

 

L

H

H

L

L

H

High-Z (IO0–IO7);

Read

Active (ICC)

 

 

 

 

 

 

Data Out (IO8–IO15)

 

 

L

H

H

H

L

H

High-Z

Output Disabled

Active (ICC)

L

H

H

H

H

L

High-Z

Output Disabled

Active (ICC)

L

H

H

H

L

L

High-Z

Output Disabled

Active (ICC)

L

H

L

X

L

L

Data In (IO0–IO15)

Write

Active (ICC)

L

H

L

X

H

L

Data In (IO0–IO7);

Write

Active (ICC)

 

 

 

 

 

 

High-Z (IO8–IO15)

 

 

L

H

L

X

L

H

High-Z (IO0–IO7);

Write

Active (ICC)

 

 

 

 

 

 

Data In (IO8–IO15)

 

 

Ordering Information

Speed

 

Package

Package Type

Operating

(ns)

Ordering Code

Diagram

Range

 

 

 

 

 

 

55

CY62157EV18LL-55BVXI

51-85150

48-ball Very Fine Pitch Ball Grid Array (Pb-free)

Industrial

 

 

 

 

 

Contact your local Cypress sales representative for availability of these parts

Document #: 38-05490 Rev. *D

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Contents Features Functional DescriptionProduct Portfolio Logic Block Diagram Pin ConfigurationBall Vfbga Top View Maximum Ratings Electrical Characteristics Over the Operating RangeOperating Range CapacitanceThermal Resistance Data Retention Characteristics Over the Operating RangeAC Test Loads and Waveforms Data Retention WaveformParameter Description 55 ns Unit Min Read CycleWrite Cycle Read Cycle 1 Address Transition Controlled 17 Switching WaveformsWrite Cycle 2 CE 1 or CE 2 Controlled 16, 20 Write Cycle 1 WE Controlled 16, 20Write Cycle 4 BHE/BLE Controlled, OE LOW Write Cycle 3 WE Controlled, OE LOWTruth Table Inputs/Outputs Mode PowerOrdering Information CE1 CE2 BHE BLEBall Vfbga 6 x 8 x 1 mm Package DiagramsDocument History Issue Date Orig. Description of ChangeDocument Title CY62157EV18 MoBL 8-Mbit 512K x 16 Static RAM Document Number38-05490VKN Issue Date Orig. Description of Change 908120Added footnote #7 related to ISB2 Added footnote #12 related AC timing parameters

CY62157EV18 specifications

The Cypress CY62157EV18 is a highly advanced static random-access memory (SRAM) chip that has garnered significant attention in the embedded systems and high-speed applications space due to its innovative features and reliable performance. This memory device is designed to meet the rigorous demands of modern electronics by providing fast access speeds and low power consumption.

One of the main features of the CY62157EV18 is its high-density configuration, which offers a substantial memory capacity of 1 megabit (Mb). This capacity is often ideal for applications that require significant data storage without occupying too much physical space on the printed circuit board. The chip uses a 3.3V memory architecture, which enables compatibility with various voltage levels, making it versatile across different systems.

The device's access time is another standout characteristic, boasting a read access time of 10 to 15 nanoseconds. This incredibly fast access time allows for quicker data retrieval, which is crucial for real-time applications such as telecommunications, automotive electronics, and consumer devices. The design incorporates an improved write cycle time of 15 nanoseconds, ensuring that data can be written with minimal delay, further enhancing system performance.

Incorporating advanced CMOS technology, the CY62157EV18 achieves low power consumption while maintaining high-speed performance. It features a standby current of only 0.5 µA under a full ambient temperature range, which is particularly beneficial for battery-powered devices that demand energy efficiency. Additionally, with a wide operating temperature range from -40°C to 125°C, this memory chip is well-suited for industrial and automotive environments, where extreme temperatures can be a concern.

The device also includes full support for asynchronous SRAM operation, allowing for flexible interfacing with various microcontrollers and digital signal processors. With a simple interface that facilitates easy integration into existing designs, the CY62157EV18 offers designers the flexibility they need.

In conclusion, the Cypress CY62157EV18 is characterized by its high density, fast access speeds, low power consumption, and compatibility with a wide range of applications. Its array of features makes it an ideal choice for engineers looking to enhance performance in systems requiring reliable and efficient memory solutions. Whether in consumer electronics, automotive applications, or industrial controls, this SRAM chip continues to be a preferred option among developers seeking both performance and efficiency.