Cypress CY62157EV18 Thermal Resistance, AC Test Loads and Waveforms, Data Retention Waveform, Bga

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CY62157EV18 MoBL®

Thermal Resistance [8]

Parameter

Description

Test Conditions

BGA

Unit

ΘJA

Thermal Resistance

Still air, soldered on a 3 × 4.5 inch,

72

°C/W

 

(Junction to Ambient)

two-layer printed circuit board

 

 

ΘJC

Thermal Resistance

 

8.86

°C/W

 

(Junction to Case)

 

 

 

AC Test Loads and Waveforms

R1

VCC

OUTPUT

30 pF

INCLUDING

JIG AND

SCOPE

 

3V

 

 

 

 

 

 

 

 

ALL INPUT PULSES

 

 

 

 

 

 

 

 

 

 

 

90%

 

10%

 

 

 

 

 

 

90%

 

 

 

 

 

10%

 

 

 

 

 

 

 

 

 

 

 

 

 

 

R2

GND

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Rise Time = 1 V/ns

 

 

 

 

 

 

 

 

 

 

 

 

Fall Time = 1 V/ns

 

 

 

 

 

 

 

 

 

 

 

 

 

Equivalent to: THEVENIN EQUIVALENT

RTH

OUTPUT V

Parameters

Value

Unit

R1

13500

 

 

 

R2

10800

 

 

 

RTH

6000

VTH

0.80

V

Data Retention Characteristics (Over the Operating Range)

Parameter

Description

 

 

Conditions

Min

Typ [2]

Max

Unit

VDR

VCC for Data Retention

 

 

 

1.0

 

 

V

ICCDR

Data Retention Current

VCC= VDR,

CE

1 > VCC – 0.2V,

 

1

3

A

 

 

CE2 < 0.2V,VIN > VCC – 0.2V or VIN < 0.2V

 

 

 

 

tCDR [8]

Chip Deselect to Data Retention Time

 

 

 

0

 

 

ns

tR [9]

Operation Recovery Time

 

 

 

tRC

 

 

ns

Data Retention Waveform [10]

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VCC

VCC(min)

 

 

 

 

 

 

 

 

 

 

 

 

tCDR

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CE1 or

BHE.BLE or

CE2

DATA RETENTION MODE

VDR > 1.0V

VCC(min)

tR

Notes

9.Full device operation requires linear VCC ramp from VDR to VCC(min) > 100 s or stable at VCC(min) > 100 s.

10.BHE.BLE is the AND of both BHE and BLE. Deselect the chip by either disabling chip enable signals or by disabling both BHE and BLE.

Document #: 38-05490 Rev. *D

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Contents Functional Description FeaturesProduct Portfolio Pin Configuration Logic Block DiagramBall Vfbga Top View Electrical Characteristics Over the Operating Range Maximum RatingsOperating Range CapacitanceData Retention Characteristics Over the Operating Range Thermal ResistanceAC Test Loads and Waveforms Data Retention WaveformRead Cycle Parameter Description 55 ns Unit MinWrite Cycle Switching Waveforms Read Cycle 1 Address Transition Controlled 17Write Cycle 1 WE Controlled 16, 20 Write Cycle 2 CE 1 or CE 2 Controlled 16, 20Write Cycle 3 WE Controlled, OE LOW Write Cycle 4 BHE/BLE Controlled, OE LOWInputs/Outputs Mode Power Truth TableOrdering Information CE1 CE2 BHE BLEPackage Diagrams Ball Vfbga 6 x 8 x 1 mmIssue Date Orig. Description of Change Document HistoryDocument Title CY62157EV18 MoBL 8-Mbit 512K x 16 Static RAM Document Number38-05490Issue Date Orig. Description of Change 908120 VKNAdded footnote #7 related to ISB2 Added footnote #12 related AC timing parameters

CY62157EV18 specifications

The Cypress CY62157EV18 is a highly advanced static random-access memory (SRAM) chip that has garnered significant attention in the embedded systems and high-speed applications space due to its innovative features and reliable performance. This memory device is designed to meet the rigorous demands of modern electronics by providing fast access speeds and low power consumption.

One of the main features of the CY62157EV18 is its high-density configuration, which offers a substantial memory capacity of 1 megabit (Mb). This capacity is often ideal for applications that require significant data storage without occupying too much physical space on the printed circuit board. The chip uses a 3.3V memory architecture, which enables compatibility with various voltage levels, making it versatile across different systems.

The device's access time is another standout characteristic, boasting a read access time of 10 to 15 nanoseconds. This incredibly fast access time allows for quicker data retrieval, which is crucial for real-time applications such as telecommunications, automotive electronics, and consumer devices. The design incorporates an improved write cycle time of 15 nanoseconds, ensuring that data can be written with minimal delay, further enhancing system performance.

Incorporating advanced CMOS technology, the CY62157EV18 achieves low power consumption while maintaining high-speed performance. It features a standby current of only 0.5 µA under a full ambient temperature range, which is particularly beneficial for battery-powered devices that demand energy efficiency. Additionally, with a wide operating temperature range from -40°C to 125°C, this memory chip is well-suited for industrial and automotive environments, where extreme temperatures can be a concern.

The device also includes full support for asynchronous SRAM operation, allowing for flexible interfacing with various microcontrollers and digital signal processors. With a simple interface that facilitates easy integration into existing designs, the CY62157EV18 offers designers the flexibility they need.

In conclusion, the Cypress CY62157EV18 is characterized by its high density, fast access speeds, low power consumption, and compatibility with a wide range of applications. Its array of features makes it an ideal choice for engineers looking to enhance performance in systems requiring reliable and efficient memory solutions. Whether in consumer electronics, automotive applications, or industrial controls, this SRAM chip continues to be a preferred option among developers seeking both performance and efficiency.