Cypress CY62157EV18 manual Logic Block Diagram, Pin Configuration, Ball Vfbga Top View

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CY62157EV18 MoBL®

Logic Block Diagram

A10

A9

A8

 

DECODER

 

A45

 

A7

 

 

A6

 

 

A

 

ROW

A2

 

 

A3

 

 

 

 

 

 

 

A1

 

 

A0

 

 

 

 

DATA IN DRIVERS

512K x 16 RAM Array

SENSE AMPS

IO0–IO7

IO8–IO15

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

COLUMN DECODER

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

BHE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

WE

11

12

13

14

15

16

17

18

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

OE

A

A A

A

A

A

A A

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

BLE

POWER DOWN

 

CE2

CIRCUIT

BHE

BLE

 

 

 

 

 

CE

1

 

 

 

 

CE2

CE1

Pin Configuration [3]

48-ball VFBGA

Top View

1

2

3

4

 

5

 

6

 

BLE

OE

A0

A1

A2

CE2

A

IO8

BHE

A3

A4

CE1

IO0

B

IO9

IO10

A5

A6

IO1

IO2

C

V

SS

IO11

A

A

7

IO

3

VCC

D

 

 

17

 

 

 

 

VCC

IO12

NC

A16

IO4

VSS

E

IO14

IO13

A14

A15

IO5

IO6

F

IO15

NC

A12

A13

WE

IO7

G

A18

A8

A9

A10

A11

NC

H

Note

3. NC pins are not connected on the die.

Document #: 38-05490 Rev. *D

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Contents Product Portfolio FeaturesFunctional Description Ball Vfbga Top View Logic Block DiagramPin Configuration Operating Range Electrical Characteristics Over the Operating RangeMaximum Ratings CapacitanceAC Test Loads and Waveforms Data Retention Characteristics Over the Operating RangeThermal Resistance Data Retention WaveformWrite Cycle Parameter Description 55 ns Unit MinRead Cycle Switching Waveforms Read Cycle 1 Address Transition Controlled 17Write Cycle 1 WE Controlled 16, 20 Write Cycle 2 CE 1 or CE 2 Controlled 16, 20Write Cycle 3 WE Controlled, OE LOW Write Cycle 4 BHE/BLE Controlled, OE LOWOrdering Information Inputs/Outputs Mode PowerTruth Table CE1 CE2 BHE BLEPackage Diagrams Ball Vfbga 6 x 8 x 1 mmDocument Title CY62157EV18 MoBL 8-Mbit 512K x 16 Static RAM Issue Date Orig. Description of ChangeDocument History Document Number38-05490Added footnote #7 related to ISB2 Issue Date Orig. Description of Change 908120VKN Added footnote #12 related AC timing parameters

CY62157EV18 specifications

The Cypress CY62157EV18 is a highly advanced static random-access memory (SRAM) chip that has garnered significant attention in the embedded systems and high-speed applications space due to its innovative features and reliable performance. This memory device is designed to meet the rigorous demands of modern electronics by providing fast access speeds and low power consumption.

One of the main features of the CY62157EV18 is its high-density configuration, which offers a substantial memory capacity of 1 megabit (Mb). This capacity is often ideal for applications that require significant data storage without occupying too much physical space on the printed circuit board. The chip uses a 3.3V memory architecture, which enables compatibility with various voltage levels, making it versatile across different systems.

The device's access time is another standout characteristic, boasting a read access time of 10 to 15 nanoseconds. This incredibly fast access time allows for quicker data retrieval, which is crucial for real-time applications such as telecommunications, automotive electronics, and consumer devices. The design incorporates an improved write cycle time of 15 nanoseconds, ensuring that data can be written with minimal delay, further enhancing system performance.

Incorporating advanced CMOS technology, the CY62157EV18 achieves low power consumption while maintaining high-speed performance. It features a standby current of only 0.5 µA under a full ambient temperature range, which is particularly beneficial for battery-powered devices that demand energy efficiency. Additionally, with a wide operating temperature range from -40°C to 125°C, this memory chip is well-suited for industrial and automotive environments, where extreme temperatures can be a concern.

The device also includes full support for asynchronous SRAM operation, allowing for flexible interfacing with various microcontrollers and digital signal processors. With a simple interface that facilitates easy integration into existing designs, the CY62157EV18 offers designers the flexibility they need.

In conclusion, the Cypress CY62157EV18 is characterized by its high density, fast access speeds, low power consumption, and compatibility with a wide range of applications. Its array of features makes it an ideal choice for engineers looking to enhance performance in systems requiring reliable and efficient memory solutions. Whether in consumer electronics, automotive applications, or industrial controls, this SRAM chip continues to be a preferred option among developers seeking both performance and efficiency.