Cypress CY62146ESL manual Data Retention Characteristics, Data Retention Waveform

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CY62146ESL MoBL

Data Retention Characteristics

Over the Operating Range

 

Parameter

Description

 

 

Conditions

 

Min

Typ[3]

Max

Unit

VDR

VCC for Data Retention

 

 

 

 

1.5

 

 

V

ICCDR

Data Retention Current

 

 

> VCC – 0.2V,

VCC = 1.5V

 

1

7

μA

 

CE

 

 

 

 

 

VIN > VCC – 0.2V or VIN < 0.2V

 

 

 

 

 

tCDR [7]

Chip Deselect to Data

 

 

 

 

0

 

 

ns

 

 

 

Retention Time

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

t

R

[8]

Operation Recovery Time

 

 

 

 

t

 

 

ns

 

 

 

 

 

 

 

RC

 

 

 

Data Retention Waveform

 

 

VCC(min)

DATA RETENTION MODE

VCC(min)

V

CC

V

> 1.5V

 

tCDR

DR

 

tR

 

 

 

 

CE

 

 

 

 

Notes

7.Tested initially and after any design or process changes that may affect these parameters.

8.Full device operation requires linear VCC ramp from VDR to VCC(min) > 100 μs or stable at VCC(min) > 100 μs.

Document #: 001-43142 Rev. **

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Contents Logic Block Diagram FeaturesFunctional Description Cypress Semiconductor Corporation 198 Champion CourtProduct Portfolio Pin ConfigurationMaximum Ratings Electrical CharacteristicsOperating Range Device Range AmbientThermal Resistance CapacitanceAC Test Loads and Waveforms TsopParameter Description Conditions Min Typ Max Unit Data Retention CharacteristicsData Retention Waveform Write Cycle12 Switching CharacteristicsParameter Read Cycle Description 45 ns Min Max Unit Read Cycle No.1 Address Transition Controlled Switching WaveformsWrite Cycle No 1 WE Controlled 12, 16 Write Cycle 3 WE controlled, OE LOW Ordering Information Inputs/Outputs Mode PowerBHE BLE CY62146ESL-45ZSXIPackage Diagrams New Data Sheet Issue Date Orig. Change Description of Change 1875228Document History REV ECN no