Cypress CY7C1298H manual Features, Selection Guide Functional Description1, MHz 133 MHz Unit

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CY7C1298H

1-Mbit (64K x 18) Pipelined DCD Sync SRAM

Features

Registered inputs and outputs for pipelined operation

Optimal for performance (Double-Cycle deselect)

Depth expansion without wait state

64K × 18-bit common I/O architecture

3.3V core power supply (VDD)

2.5V/3.3V I/O power supply (VDDQ)

Fast clock-to-output times

3.5 ns (for 166-MHz device)

Provide high-performance 3-1-1-1 access rate

User-selectable burst counter supporting IntelPentiuminterleaved or linear burst sequences

Separate processor and controller address strobes

Synchronous self-timed writes

Asynchronous Output Enable

Available in JEDEC-standard lead-free 100-Pin TQFP package

“ZZ” Sleep Mode option

Selection Guide

Functional Description[1]

The CY7C1298H SRAM integrates 64K x 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input (CLK). The synchronous inputs include all addresses, all data inputs, address-pipelining Chip Enable (CE1), depth-expansion Chip Enables (CE2 and CE3), Burst Control inputs (ADSC, ADSP, and ADV), Write Enables (BW[A:B], and BWE), and Global Write (GW). Asynchronous inputs include the Output Enable (OE) and the ZZ pin.

Addresses and chip enables are registered at rising edge of clock when either Address Strobe Processor (ADSP) or Address Strobe Controller (ADSC) are active. Subsequent burst addresses can be internally generated as controlled by the Advance pin (ADV).

Address, data inputs, and write controls are registered on-chip to initiate a self-timed Write cycle.This part supports Byte Write operations (see Pin Descriptions and Truth Table for further details). Write cycles can be one to two bytes wide as controlled by the byte write control inputs. GW active LOW causes all bytes to be written. This device incorporates an additional pipelined enable register which delays turning off the output buffers an additional cycle when a deselect is executed.This feature allows depth expansion without penal- izing system performance.

The CY7C1298H operates from a +3.3V core power supply while all outputs operate either with a +2.5V or +3.3V supply. All inputs and outputs are JEDEC-standard JESD8-5-compatible.

 

166 MHz

133 MHz

Unit

Maximum Access Time

3.5

4.0

ns

 

 

 

 

Maximum Operating Current

240

225

mA

 

 

 

 

Maximum CMOS Standby Current

40

40

mA

 

 

 

 

Note:

1. For best-practices recommendations, please refer to the Cypress application note System Design Guidelines on www.cypress.com.

Cypress Semiconductor Corporation

198 Champion Court • San Jose, CA 95134-1709

408-943-2600

Document #: 38-05665 Rev. *B

 

Revised July 5, 2006

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Contents Selection Guide Functional Description1 Features166 MHz 133 MHz Unit Cypress Semiconductor CorporationCY7C1298H Functional Block DiagramCY7C1298H Pin Configurations Pin TqfpTop View Pin Descriptions Functional Overview Sleep ModeBurst Sequences Linear Burst Address Table Mode = GND Interleaved ‘Burst Address Table Mode = Floating or VDDFirst Second Third Fourth Address A1, A0Function ZZ Mode Electrical CharacteristicsParameter Description Test Conditions Min Max Unit Maximum Ratings Electrical Characteristics Over the Operating Range7,8Operating Range Ambient RangeCapacitance9 Thermal Characteristics9AC Test Loads and Waveforms Switching Characteristics Over the Operating Range 14 Read Timing16 Switching WaveformsAddress A1 A2 Write Timing16Read/Write Timing16, 18 DON’T Care ZZ Mode Timing20Ordering Information Package DiagramPin Tqfp 14 x 20 x 1.4 mm Document History Issue Date Orig. Description of Change