Sanyo EP92H manual FETs for Cell phone ECM, Digital Cell Phone 0.8 GHz, 1.5 GHz

More Data Even Faster. Supporting Needs for Higher Performance with Peripheral Components

SANYO's Lineup of High-Reliability Discrete Devices

FETs for Cell phone ECM

SANYO supplies high-performance GaAs switching ICs that feature the industry's smallest package size and smallest number of external components. SANYO discrete devices have been always leading the cell phone and mobile equipment markets. SANYO is also developing devices that support the need for higher speeds and larger data capacities for image and video data due to the inclusion of high pixel count cameras in this equipment.

Digital Cell Phone 0.8 GHz, 1.5 GHz

Inner antenna

Low-noise amplifier

Thin-form package technology Gold loop and new software (M loop)

Gold loop and new software MAXm 100

High signal-to-noise ratio technology

JFET noise component

Condenser microphone JFET structure

Drain

	Drain pad
JFET	Protective
	diode static
Source pad	voltage

Whip antenna

Antenna switches( GaAs MMIC)
SPM3212
SPM3215	Buffer amplifiers
SPM3220	EC3H10B
SPM3226	FS303
Filter switches	FS304
(GaAs MMIC)
SPM3212
SPM3220
Power amplifier SPM3226

OSC(NPN BiP)

EC3H09B, EC3H07B SBFP420B

Local switches

SPM3212

SPM3220

SPM3226

	φ20∝m
Earlier software: the chip and wire	Gold loop
were shorted together

WB loop height: 150 m maximum → reduced to 100 m maximum

	workaround
	Gate
	Polysilicon resistor
Gate sub	transient characteristics

workaround Source

The high resistance polysilicon resistor (1 to 3 GΩ) used to stabilized the gate-source

Antenna switch

Baseband logic

Thinner island frame and improved frame bending process

SSFP		VSFP	VTFP
1.4✕1.4✕0.6 mm		1.2✕1.4✕0.46 mm	1.2✕1.4✕0.34 mm
Fame
thickness	Thinner		Ultrathinner
120 m
		Fame
		thickness	Fame

potential accounts for a large portion of the JFET noise component.

			Result
	-106			0.14	2 GΩ
	-106.5			0.12
voltage (dBV)		Smaller	Gatevoltage (V)		25 GΩ
	-107			0.10	90 GΩ
	-107.5			0.08
	-108			0.06
	-108.5			0.04

CDMA/TDMA (IS136)

(Pch MOS)	Li-ion	(Pch MOS)
	Battery
MCH6305/MCH6307	(Pch MOS)	MCH6305/MCH6307
ECH8603		ECH8603
	ECH8601
	ECH8603

70 m	thickness
	70 m

Frame bend width		Frame bend width
130 m		100 m		Frame bend width
				50 m
Island frame thickness:			Total reduction: 130 ￿m !
Reduced by 50	m !
Frame bending process:
Reduced by 80	m !

Noise	-109		Larger							0.02
	-109.5									0.00
	0.00	0.50	1.00	1.50	2.00	2.50	3.00	3.50	4.00	0	2	4	6	8	10
					RGS (GΩ)						Potential stabilization time (s)

Development

Ext.	Inner antenna		Low-noise amplifier	Filter
				Mixer
		Diversity switches
		(GaAs MMIC)		Filter switches for TDMA
	Antenna	SPM3212
				OSC(NPN BiP)	(GaAs MMIC)
		SPM3215
		SPM3220		EC3H09B	SPM3211
		SPM3226		EC3H07B	SPM3212
				SBFP420B

Establishment of and ultrathin wafer process (4 inch)

Introduction of B/G plus spin etching process!!

Factor workaround

Target thickness: 80 ∝m			Target thickness: 80 ∝m			Target thickness: 80 ∝m
	Spin etching process	B/G		Spin etching process	Spin etching
	thickness: 40 ∝m			thickness: 40 ∝m

B/G process thickness: 350 ∝m

SANYO established an 80 ∝m ultrathin wafer process by improving the wafer chamfering shape and introducing spin etching !!!

Improved signal-to-noise ratio due to p-channel MOSFET development

			VDD
Input protection		VDD protection resistor	300‰
diode	GND	VDD
		VIN	1k‰
	VIN	Pch MOSFET
Input protection		L / W = 3 ∝m / 1 mm
resistor
			GND
		Effect

	Buffer amplifiers	Local switches
	(NPN BiP)	(GaAs MMIC)	Filter switches for TDMA
	EC3H10B	SPM3212	(GaAs MMIC)
	FS303	SPM3220	SPM3212
	FS304	SPM3226	SPM3220
Antenna switch	Duplexer		SPM3226
	PA module

Filter switches for PCS and TDMA

SPM3212, SPM3220, SPM3226

Total package height

SSFP	VSFP	VTFP
mm	mm	mm

	Noise voltage (dBV)	Insertion loss (dBV)	Signal-to-noise ratio (dB)	Signal-to-noise ratio evaluation
Pch MOSFET	-113 to -114	-5.0 to -5.5	68 to 68.5
JFET	-105 to -107	-1.5 to -3.5	62 to 64

		Potential stabilization time
Enhancement mode		0.5
	(V)	0.4
P-ch MOSFET
Potential stabilization time		0.3

PHS

Inner antenna

Low-noise amplifiers

0.6 Thinner 0.46 Ultrathinner 0.34

SANYO achieved extremely thin packages by combining of the above technologies.

Voltage	0.2
Vin	0.1
	0
	0	0.5	1	1.5	2	2.5	3
				Time (s)

The potential stabilization time becomes under 1 second in enhancement mode p-channel MOSFETs.

Antenna

EC3H07B EC3H10B

SBFP405B SBFP420B

SBFP540B

Buffer amplifiers

Diversity switch(NPN BiP)

EC3H07B

FS303

Antenna switches

SPM3212 SPM3215

SPM3220 SPM3226

Power amplifier

Local switches (NPN BiP)

SPM3212

SPM3220

SPM3226

OSC EC3H09B

EC3H07B

SBFP420B

Li-ion battery	Baseband logic
CPH3106(PNP Bip.),	CPH3106(PNP Bip.)
MCH3106(PNP Bip.)	MCH3106(PNP Bip.)
MCH6305(Pch MOS)	MCH6305(Pch MOS)
MCH6307(Pch MOS)

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