Sanyo EP92H manual Microwave Device Series, Power MOSFETs+ Schottky Barrier Diodes for logic block

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SANYO's Lineup of High-Reliability

Discrete Devices

Microwave Device Series

●High-frequency silicon transistors for VCO

			Size	fT	VCEO	IC	PC	NF	S21e	2
Usage	Type No.	Package	(mm)	typ.	(V)	(mA)	(mW)	typ.(dB)	typ.(dB)		Notes
				(GHz)
Oscillator	EC3H09B	ECSP	1.0 ⋅ 0.6	11.2	4	70	100	1.5	6
	EC3H11B	ECSP	1.0 ⋅ 0.6	10.5	4	80	100	1.5	5
	SPFP420B	ECSP	1.0 ⋅ 0.6	25	4.5	35	100	1.1	17
	SPFP540B	ECSP	1.0 ⋅ 0.6	29	4.5	80	100	0.9	8.5
	2SC5781	SSFP	1.4 ⋅ 0.8	11.2	4	70	100	1.5	6
	2SC5783	SSFP	1.4 ⋅ 0.8	10.5	4	80	100	1.5	5
Buffer	EC3H07B	ECSP	1.0 ⋅ 0.6	12.5	4	30	100	1.5	10.5
	EC3H10B	ECSP	1.0 ⋅ 0.6	12.5	4	40	100	1.3	8.5
	2SC5646	SSFP	1.4 ⋅ 0.8	10	4	30	100	1.5	9.5
	2SC5782	SSFP	1.4 ⋅ 0.8	12.5	4	40	100	1.3	8.5
Oscillator	FS301 (TR1 Side)	ECSP	1.2 ⋅ 0.8	12.5	4	30	100	1.5	10.5		2SC5645
+ Buffer
	(TR2 Side)			25	4.5	35	100	1.1	17		SBFP420
	FS303 (TR1 Side)	ECSP	1.2 ⋅ 0.8	12.5	4	30	100	1.5	10.5		2SC5645
	(TR2 Side)			11.2	4	70	100	1.5	8.5		2SC5781
	FS304 (TR1 Side)	ECSP	1.2 ⋅ 0.8	12.5	4	40	100	1.3	10.5		2SC5782
	(TR2 Side)			11.2	4	70	100	1.5	8.5		2SC5781

●GaAs MMIC products for Antenna switches, local switches and other switches

			Size	Control	Isolation		Insertion Loss		Pin1dB
Usage	Type No.	Package	(mm)	Voltage						Notes
					typ.(dB)		typ.(dB)		typ.(dBm)
				(V)
Switch	SPM3220	ECSP	1.2 ⋅ 0.8	3	**16		**0.5		26	0.4 to 2.5 GHz Use
	SPM3226	ECSP	1.2 ⋅ 0.8	2.4 to 5	**18		**0.35		22(2.8V)	0.4 to 2.5 GHz Use
	SPM3227	ECSP	1.2 ⋅ 0.8	2.4 to 5	**18		**0.35		22(2.8V)	0.4 to 2.5 GHz Use
	SPM3211	MCPH6	2.1 ⋅ 2.0	3	**16		**0.55		28	0.4 to 2.5 GHz Use
	SPM3212	MCPH6	2.1 ⋅ 2.0	3	**16		**0.55		28	0.4 to 2.5 GHz Use
	SPM3215	MCPH6	2.1 ⋅ 2.0	3	**13		**1.1		26	0.4 to 2.5 GHz Use
	SPM3501	MCPH6	2.1 ⋅ 2.0	3		13		1.0	20	Up to 6 GHz Use

SPM3211: Reverse control IC of SPM3212

** Measured frequency: 2.5 GHz

Measured frequency: 1 to 2.5 GHz

SPM3215: Single control IC

Measured frequency: 5.8 GHz

Measured frequency: 5 to 6 GHz

SPM3226: Reverse control IC of SPM3227

Power MOSFETs+ Schottky Barrier Diodes for logic block

Type No.

Package

Size

VDSS

ID

PD

RDS(on)

VRRM

IO

VF

IR

(mm)

(V)

(A)

(W)

VGS=2.5V

(V)

(A)

max. (V)

max. (∝A)

max. (Ω)

MCH5801

MCPH5

2.1 ⋅ 2.0

20

1.5

0.8

280m

15

0.5

0.45

200

MCH5815

MCPH5

2.1 ⋅ 2.0

12

1.5

0.8

450m

15

0.5

0.45

200

CPH5802

CPH5

2.8 ⋅ 2.9

20

2

0.9

200m

15

1

0.4

500

CPH5811

CPH5

2.8 ⋅ 2.9

20

3

0.9

82m

15

1

0.4

500

As miniaturization and efficiency advance and improve in portable equipment, the needs for further miniaturization and lower power consumption in discrete devices are increasing even faster.

SANYO responds to these needs by providing an extensive line of products that contribute to reduced mounting areas and reduced parts counts in application circuits

Ultralow on-resintance Power MOSFETs for RF and logic block

Type No.

Package

Size

VDSS

RDS(on)

RDS(on)

RDS(on)

ID

Ciss

Polarity

VGS=4.5V

VGS=2.5V

VGS=1.5V

(mm)

(V)

(A)

typ(pF)

Max. (Ω)

Max. (Ω)

Max. (Ω)

SCH1302

SCH6

1.6 ⋅ 1.6

20

*0.165

0.22

0.39

2

410

Pch

SCH2601(Pch)

SCH6

1.6 ⋅ 1.6

30

*1.9

2.8

0.4

40

Pch+Nch

(Nch)

1.6 ⋅ 1.6

30

*0.9

1.15

0.7

30

SCH2602(Pch)

SCH6

Pch+Nch

12

0.31

0.47

0.67

1.5

160

(Nch)

30

*3.7

5.2

0.35

7

3LP03M

MCP

2.1 ⋅ 2.0

30

*1.9

2.8

250m

40

Pch

3LN03M

MCP

2.1 ⋅ 2.0

30

*0.9

1.15

350m

30

Nch

MCH3411

MCPH6

2.1 ⋅ 2.0

30

*90m

118m

3

270

Nch

MCH6305

MCPH6

2.1 ⋅ 2.0

20

65m

98m

4

680

Pch

MCH6307

MCPH6

2.1 ⋅ 2.0

12

46m

66m

98m

5

940

Pch

CPH6311

CPH6

2.8 ⋅ 2.9

20

42m

60m

5

1230

Pch

ECH8603

ECH8

2.8 ⋅ 2.9

20

54m

87m

4

800

Pch Dual

ECH8611

ECH8

2.8 ⋅ 2.9

12

40m

65m

5

1230

Pch Dual

VEC2302

VEC8

2.8 ⋅ 2.9

30

168m

3

510

Pch Dual

VEC2303

VEC8

2.8 ⋅ 2.9

12

49m

75m

107m

4

940

Pch Dual

*VGS=4V, VGS=1.8V

Low saturation voltage transistors for logic block

Type No.

Package

Size

VCEO

IC

PC

hFE

VCE (sat)

Porality

(mm)

(V)

(A)

(W)

Min. to Max.

Max. (mV)

15C01S

SMCP

1.6 ⋅ 1.6

15

0.6

0.2

300 to 800

300

NPN

30C02S

SMCP

1.6 ⋅ 1.6

15

0.8

0.2

300 to 800

280

NPN

SCH2101

SCH6

1.6 ⋅ 1.6

12

0.8

0.4

300 to 800

240

PNP

SCH2201

SCH6

1.6 ⋅ 1.6

15

0.8

0.4

300 to 800

280

NPN+NPN

SCH2503(PNP)

SCH6

1.6 ⋅ 1.6

30

0.6

0.4

200 to 500

220

PNP+NPN

(NPN)

30

0.6

0.4

300 to 800

190

MCH3106

MCPH3

2.1 ⋅ 2.0

12

3

0.8

200 to 560

165

PNP

MCH3206

MCPH3

2.1 ⋅ 2.0

15

3

0.8

200 to 560

150

NPN

CPH3109

CPH3

2.8 ⋅ 2.9

30

3

0.9

200 to 560

230

PNP

CPH3209

CPH3

2.8 ⋅ 2.9

30

3

0.9

200 to 560

180

NPN

Schottky Barrier Diodes for logic block

Type No.

Package

Size

VRRM

IO

IFSM

VF

IR

Notes

(mm)

(V)

(A)

(A)

max. (V)

max. (∝A)

SS1003EJ

ECSP

1.6 ⋅ 0.8

30

1

5

0.45

360

SB1003EJ

ECSP

1.6 ⋅ 0.8

30

1

5

0.55

15

S0503SH

SCH6

1.6 ⋅ 1.6

30

0.5

5

0.47

120

SS1003M

MCPH6

2.1 ⋅ 2.0

30

1

5

0.45

15

SB1003M

MCPH6

2.1 ⋅ 2.0

30

1

5

0.55

15

SBS004M

MCPH3

2.1 ⋅ 2.0

15

1

10

0.4

500

SBS808M

MCPH5

2.1 ⋅ 2.0

15

1

10

0.43

90

Parallel type

38 39